samwin sw p 730

SAMWIN
SW P 730
General Description
Features
zN-Channel MOSFET
zBVDSS (Minimum)
zRDS(ON) (Maximum)
zID
zQg (Typical)
zPD (@TC=25 ℃)
This power MOSFET is produced with advanced
VDMOS technology of SAMWIN. This technology
enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low
gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or
full bridge resonant topology like a electronic ballast,
and also low power switching mode power
appliances.
: 400 V
: 1.0 ohm
: 6.5A
: 32 nc
: 92 W
D
G
TO-220
SW P 730
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain to Source Voltage
400
V
Continuous Drain Current (@Tc=25℃)
6.5
A
Continuous Drain Current (@Tc=100℃)
4.9
A
26
A
±30
V
ID
IDM
Drain Current Pulsed
(Note 1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
9.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
5.3
V/ns
92
W
0.74
W/℃
-55~+150
℃
300
℃
dv/dt
Total Power Dissipation (@Tc=25℃)
PD
TSTG,TJ
TL
Derating Factor above 25℃
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
RθJC
Thermal Resistance, Junction-to-Case
-
-
1.35
℃/ W
RθCS
Thermal Resistance, Case-to-Sink
-
0.5
-
℃/ W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/ W
1/6
REV1.31
07.06.05
SAMWIN
Electrical Characteristics
SW P 730
(Tc=25℃ unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Units
Min
Typ
Max
400
-
-
V
-
0.544
-
V/℃
-
-
1
uA
Off Characteristics
BVDSS
Drain- Source Breakdown Voltage
VGS=0V,ID=250uA
△BVDSS/△
Tj
Breakdown Voltage Temperature
coefficient
ID=250uA,referenced to 25℃
VDS=400V, VGS=0V
IDSS
IGSS
Drain-Source Leakage Current
VDS=320V, Tc=125℃
Gate-Source Leakage Current
VGS=30V,VDS=0V
-
-
100
nA
Gate-Source Leakage Reverse
VGS=-30V, VDS=0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250uA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS=10V,ID=3.25A
-
0.81
1.0
ohm
-
-
1220
-
-
130
-
-
32
-
-
38
-
-
38
-
-
230
-
-
50
-
32
42
-
4
-
-
12
-
Min.
Typ.
Max.
Integral Reverse
p-n Junction Diode
in the MOSFET
-
-
6.5
-
-
26
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V,VDS=25V, f=1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD=200V,ID=6.5A
RG=50ohm
(Note4,5)
Fall Time
Total Gate Charge
Gate-Source Charge
VDS=320V,VGS=10V, ID=6.5A
(Note4,5)
Gate-Drain Charge (Miller Charge)
ns
nc
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Unit.
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
IS=6.5A,VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
-
260
-
ns
Qrr
Reverse Recovery Charge
IS=6.5A,VGS=0V,
dIF/dt=100A/us
-
1.3
-
uc
※NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=18.6mH,IAS=6.5A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. ISD≤6.5A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
REV1.31
A
2/6
07.06.05
SAMWIN
SW P 730
VGS
ID,Drain Current [A]
top: 15V
10V
9V
8V
7V
6V
5.5V
5V
bottom:4.5V
ID,Drain Current [A]
1
10
4.5V
0
10
10
1
10
0
o
150 C
o
25 C
10
-1
Note:
1.VDS=50V
2.250us pulse test.
-1
10
0
4
1
10
10
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS,Drain-to-Source voltage [V]
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
ISD,Reverse Drain Current[A]
RDS(ON)
Drain-Source On-Resistance[ohm]
2.0
1.5
VGS=20V
VGS=10V
1.0
0.5
1
10
150℃
25℃
0
10
∗ Note:
1.vGS=0v
2.250us test
-1
0.0
10
0
2
4
6
8
10
12
14
16
0.2
0.4
0.6
ID, Drain Current[A]
0.8
1.0
1.2
1.4
1.6
VSD,Source-Drain Voltage[V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
12
1500
Ciss = Cgs+Cgd(Cds=shorted)
Capacitance [pF]
VGS,Gate-to-Source Voltage [V]
Coss= Cds+Cgd
Crss = Cgd
1200
Ciss
900
Coss
600
Crss
300
Note:
10
VDS=200V
VDS=125V
8
VDS=50V
6
4
2
Note:ID=6A
1.VGS=0V
2.f=1MHz.
0
0
0
10
10
0
1
5
10
15
20
25
QG,Total Gate Charge [nC]
VDC,Drain-Source Voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitve)
3/6
REV1.31
07.06.05
SAMWIN
SW P 730
3.0
2.5
RDs(on)(Normalized)
1.1
1.0
0.9
∗ Note:
Drain-Source On-Resistance
BVDSS[Normalized]
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
∗Note:
0.5
1.VGS=0V
1.VGS=10V
2.ID=250uA
0.8
-100
-50
0
50
100
150
2.ID=3.25A
0.0
-100
200
-50
0
50
100
o
TJ,Junction Temperature [ C]
Fig 7. Breakdown Voltage Variation vs.
Junction Temperature
Fig 8. On-Resistance Variation vs.
Junction Temperature
6
2
10
Operation In This Area
Limted By RDS(ON)
5
10us
1
ID, Drain Current[A]
ID, Drain Current[A]
150
o
TJ,Junction Temperature[ C]
100us
10
1ms
10ms
0
10
4
3
2
∗Note:
-1
10
1
1.Tc=25°C
2.Tj=150°C
3.Single Pulse
0
10
1
2
10
0
25
3
10
10
50
125
150
Fig 10. Maximum Drain Current
Vs. Case Temperature
0
D = 0 .5
0 .2
0 .1
0 .0 5
10
-1
0 .0 2
QJC
(t ), Thermal Response
100
o
Fig9. Maximum Safe Operating
10
75
Tc,Case Temperature [ C]
VD,Drain-Source Voltage[V]
0 .0 1
Z
S IN G L E P U L S E
∗ N o te :
o
1 .Z Θ JC (t)= 1 .3 5 C /w M a x
2 .D u ty F a c to r ,D = t1 /t2
3 . T j- T c = P D M * Z Θ J C ( t )
10
-2
10
-5
10
-4
-3
-2
-1
0
0 l s e D u r a1t 0i o n [ s e c ] 1 0
t 1 , S q u a1r 0e W a v e P1 u
10
1
Fig 11. Transient Thermal Response Curve
4/6
REV1.31
07.06.05
SAMWIN
SW P 730
VGS
Same Type
as DUT
50KΩ
Qg
10V
200nF
300nF
Qgd
Qgs
VDS
VGS
DUT
1mA
Charge
Fig 12. Gate Charge test Circuit & Waveforms
RL
VDS
VDD
(0.5 rated VDS)
10V
Pulse
Generator
RG
DUT
VDS
Vin
90%
10%
tf
td(on) tr
ton
td(off)
toff
Fig 13. Switching test Circuit & Waveforms
L
1
BVDSS
EAS= --- LLIAS2--------------2
BVDSS-VDD
VDS
VDD
BVDSS
IAS
RG
VDD
DUT
ID(t)
VDS(t)
10V
tp
Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
REV1.31
07.06.05
SAMWIN
SW P 730
+
DUT
VDS
__
L
Driver
VDD
RG
Same Type
as DUT
VGS
●
●
VGS
(Driver)
dv/dt controlled by RG
Is controlled by pulse period
Gate Pulse Width
D = --------------------------Gate Pulse Period
10V
IFM,Body Diode Forward Current
di/dt
IS
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VDD
Vf
Body Diode
Forward Voltage Drop
Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms
6/6
REV1.31
07.06.05
SAMWIN
SW P 730
Package Dimensions
TO-220
•
•
Package Dimensions
TO-220
REV1.31
A(mm)
9.66~10.28
A2(mm)
9.80~10.20
B(mm)
15.6~15.8
C(mm)
12.70~14.27
D(mm)
4.30~4.70
E(mm)
8.59~9.40
F(mm)
typical 2.54
G1(mm)
1.32~1.72
G2(mm)
0.70~0.95
G3(mm)
0.4~0.60
H(mm) dia.
3.50~3.83
I(mm)
2.7~2.9
J(mm)
15.70~16.25
K(mm)
2.20~2.90
L(mm)
1.15~1.40
a(degree)
45°
a2(degree)
3°±0.5°
a3(degree)
3°±0
07.06.05
SAMWIN
SW P 730
HISTORY
Issue No Changed Characteristics
Date
V 1.01
Origination
2006.9.14
V1.31
Package Dimensions
2007.6.05
REV1.31
Issuer
07.06.05