RB160L-90 Diodes Schottky barrier diode RB160L-90 zApplications General rectification zLand size figure (Unit : mm) zExternal dimensions (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 5.0±0.3 4 4.5±0.2 4 1.2±0.3 4.2 zFeatures 1) Small power mold type. (PMDS) 2) Low IR 3) High reliability PMDS zStructure 2.0±0.2 1.5±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperatuer Symbol VRM VR Io IFSM Tj Tstg (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Symbol Min. Forward voltage VF Reverse current IR Limits 95 90 1 30 150 -40 to +150 - Typ. - Max. 0.73 Unit V - - 100 µA Unit V V A A ℃ ℃ Conditions IF=1.0A VR=90V 1/3 RB160L-90 Diodes zElectrical characteristic curves Ta=150℃ 1000 Ta=25℃ Ta=150℃ Ta=-25℃ 0.01 f=1MHz 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 650 630 AVE:632.1mV 620 610 80 70 60 50 40 30 AVE:478.3nA σ:36.1612nA 20 AVE:4.655uA 180 170 160 150 140 120 100 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 100 8.3ms AVE:56.0A 50 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 150 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.40ns 10 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 200 100 Ifsm 8.3ms 8.3ms 1cyc 50 0 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Ifsm t 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 2 IM=10mA IF=0.5A Rth(j-a) 100 1ms time 300us Rth(j-c) 10 1 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) 150 1 AVE:149.6pF 130 110 0 600 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 90 REVERSE CURRENT:IR(uA) 640 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 100 Ta=25℃ IF=1A n=30pcs 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1 0 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ Ta=125℃ 0.1 Ta=125℃ 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 D=1/2 DC 1 Sin(θ＝180) 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2/3 RB160L-90 Diodes 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) 3 0A 0V 2.5 D=1/2 0.6 DC 0.4 Sin(θ＝180) 0.2 2 DC 1.5 t T VR D=t/T VR=45V Tj=150℃ D=1/2 1 Sin(θ＝180) 0.5 0 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 90 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 2.5 Io t T 2 VR D=t/T VR=45V Tj=150℃ DC 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 20 AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1