EMD2 / UMD2N / IMD2A : Transistors

EMD2 / UMD2N / IMD2A
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Outline
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
EMT6
UMT6
(6)
(6)
(5)
(5)
50V
100mA
22k
22k
(4)
(4)
(1)
(1)
(2)
(2)
(3)
(3)
EMD2
(SC-107C)
SMT6
UMD2N
SOT-353 (SC-88)
(4)
(5)
(6)
<For DTr2(PNP)>
(3)
Parameter
Value
VCC
50V
100mA
22k
22k
IC(MAX.)
R1
R2
(2)
(1)
IMD2A
SOT-457 (SC-74)
Features
Inner circuit
1) Both the DTC124E chip and DTA124E chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
OUT
(6)
IN
(5)
R1
GND
(4)
R2
DTr1
R2
DTr2
R1
(1)
GND
(2)
IN
(3)
OUT
EMD2 / UMD2N
OUT
(4)
IN
(5)
R1
R2
DTr2
Application
GND
(6)
DTr1
R2
R1
Inverter circuit, Interface circuit, Driver circuit
(3)
GND
(2)
IN
(1)
OUT
IMD2A
Packaging specifications
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Package
Package
size
(mm)
Taping
code
EMD2
EMT6
1616
T2R
180
8
8,000
D2
UMD2N
UMT6
2021
TR
180
8
3,000
D2
IMD2A
SMT6
2928
T108
180
8
3,000
D2
Part No.
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© 2014 ROHM Co., Ltd. All rights reserved.
1/8
Marking
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
DTr1(NPN)
DTr2(PNP)
Unit
Supply voltage
VCC
50
50
V
Input voltage
VIN
10 to 40
40 to 10
V
Output current
IO
30
30
mA
IC(MAX.)*1
100
Collector current
Power dissipation
EMD2 / UMD2N
PD *2
IMD2A
mA
150 (Total)
mW
300 (Total)
*4
mW
Tj
150
°C
Tstg
55 to 150
°C
Junction temperature
Range of storage temperature
100
*3
Electrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VI(off)
VCC = 5V, IO = 100A
-
-
0.5
VI(on)
VO = 0.2V, IO = 5mA
3.0
-
-
VO(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
VI = 5V
-
-
0.36
mA
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
A
DC current gain
GI
VO = 5V, IO = 5mA
56
-
-
-
Input resistance
R1
-
15.4
22
28.6
k
Resistance ratio
R2/R1
-
0.8
1
1.2
-
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Unit
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
fT
*1
V
Electrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Symbol
Conditions
Min.
Typ.
Max.
VI(off)
VCC = 5V, IO = 100A
-
-
0.5
VI(on)
VO = 0.2V, IO = 5mA
3.0
-
-
VO(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
VI = 5V
-
-
0.36
mA
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
A
DC current gain
GI
VO = 5V, IO = 5mA
56
-
-
-
Input resistance
R1
-
15.4
22
28.6
k
Resistance ratio
R2/R1
-
0.8
1
1.2
-
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Parameter
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
fT
*1
V
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2014 ROHM Co., Ltd. All rights reserved.
2/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Electrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
II=
150A
30
130A
120A
20
110A
100A
90A
80A
10
70A
60A
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
140A
50A
Ta=25ºC
0
0
5
0A
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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© 2014 ROHM Co., Ltd. All rights reserved.
3/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Electrical characteristic curves(Ta = 25°C) <For DTr1(NPN)>
OUTPUT VOLTAGE : VO(on) [V]
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
Electrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.7 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.6 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
INPUT VOLTAGE : VI(off)[V]
4/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Electrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.9 DC current gain vs. output current
Fig.8 Output current vs. output voltage
II=
-30
130A
120A
-25
110A
100A
-20
90A
-15
80A
70A
-10
60A
50A
-5
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
Ta=25ºC
40A
0A
0
0
-5
-10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
OUTPUT VOLTAGE : VO(on) [V]
Fig.10 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
5/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Dimensions (Unit : mm)
D
x
c
S A
Lp
HE
L
E
L
EMT6
A
Lp
b
A1
y S
l1
A
e1
e
S
b2
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
b
c
D
E
e
HE
L
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
INCHES
MIN
0.018
0.000
0.007
0.003
0.059
0.043
MAX
0.022
0.004
0.011
0.007
0.067
0.051
0.020
0.059
0.004
-
MILIMETERS
MIN
MAX
0.37
1.25
0.45
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
-
MAX
0.015
0.049
-
0.018
Dimension in mm / inches
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© 2014 ROHM Co., Ltd. All rights reserved.
6/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Dimensions (Unit : mm)
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
Q
E
UMT6
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
INCHES
MIN
0.031
0.000
MAX
0.039
0.004
0.010
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.026
0.079
0.008
0.010
0.004
-
MILIMETERS
MIN
MAX
0.40
1.55
0.65
0.087
0.020
0.022
0.012
0.004
0.004
INCHES
MIN
-
MAX
0.016
0.061
-
0.026
Dimension in mm / inches
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© 2014 ROHM Co., Ltd. All rights reserved.
7/8
2014.12 - Rev.F
Data Sheet
EMD2 / UMD2N / IMD2A
Dimensions (Unit : mm)
D
A
e
SMT6
c
L1
Lp
HE
E
Q
A3
b
x
S A
l1
A
e1
e
A1
y S
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
INCHES
MIN
0.039
0.000
MAX
0.051
0.004
0.010
0.010
0.004
0.110
0.059
0.016
0.010
0.118
0.071
0.037
0.102
0.012
0.016
0.008
-
MILIMETERS
MIN
MAX
0.60
2.10
0.90
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
-
MAX
0.024
0.083
-
0.035
Dimension in mm / inches
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8/8
2014.12 - Rev.F
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A