UMZK : Diodes

Schottky Barrier Diode
RBQ10NS45A
Datasheet
lDimensions (Unit : mm)
lApplication
lLand size figure (Unit : mm)
General rectification
BQ10NS
45A
lFeatures
1
1) Cathode common dual type
(LPDS)
LPDS
2) Low IR
lStructure
lConstruction
Silicon epitaxial planar
Cathode
ROHM : LPDS
JEITA : TO263S
1
Manufactuare Year, Week and Day
Anode Anode
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
45
V
Reverse voltage (DC)
VR
45
V
Average rectified forward current (*1)
Io
10
A
IFSM
50
A
Tj
150
°C
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
-40 to +150
Storage temperature
Tstg
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
°C
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.65
V
Reverse current
IR
-
-
0.15
mA
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1/5
Conditions
IF=5A
VR=45V
2013.06 - Rev.B
Data Sheet
RBQ10NS45A
lElectrical characteristic curves
100000
Ta = 150°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(A)
10
Ta = 125°C
1
Ta = 75°C
Ta = 25°C
0.1
Ta = -25°C
0.01
0
1000
1
Ta = 25°C
0.1
Ta = -25°C
0
10
20
30
FORWARD VOLTAGE : VF(mV)
f = 1MHz
100
10
0
5
10
15
20
25
50
Ta=25°C
IF=5A
n=30pcs
590
580
570
560
AVE : 551.5mV
550
540
530
520
510
500
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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© 2013 ROHM Co., Ltd. All rights reserved.
40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
600
1000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ta = 75°C
10
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1
Ta = 125°C
100
0.01
100 200 300 400 500 600 700 800
Ta = 150°C
10000
VF DISPERSION MAP
2/5
2013.06 - Rev.B
Data Sheet
RBQ10NS45A
lElectrical characteristic curves
Ta=25°C
VR=45V
n=30pcs
25
20
15
AVE : 12.2mA
10
5
550
530
520
510
500
490
480
470
450
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
IFSM
8.3ms
1cyc.
AVE : 127.5A
100
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
AVE : 489.8pF
460
0
200
Ta=25°C
f=1MHz
VR=0V
n=10pcs
540
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(mA)
30
0
IFSM DISPERSION MAP
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© 2013 ROHM Co., Ltd. All rights reserved.
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE : 10.8ns
10
5
0
trr DISPERSION MAP
3/5
2013.06 - Rev.B
Data Sheet
RBQ10NS45A
lElectrical characteristic curves
300
IFSM
250
8.3ms
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
300
8.3ms
1cyc.
200
150
100
50
0
1
10
250
time
200
150
100
50
0
100
IFSM
1
1000
10
100
8
10
Rth(j-a)
1
Rth(j-c)
0.1
0.01
0.001
0.01
0.1
1
10
100
D = 1/2
6
Sin(θ=180)
4
DC
2
0
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
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© 2013 ROHM Co., Ltd. All rights reserved.
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
FORWARD POWER
DISPERSION : PF (W)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
4/5
2013.06 - Rev.B
Data Sheet
RBQ10NS45A
lElectrical characteristic curves
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
REVERSE POWER
DISPERSION : PR (W)
2
1.5
DC
1
D = 1/2
0.5
0
Sin(θ=180)
0
10
20
30
40
VR
D=t/T
VR=20V
Tj=150°C
T
D = 1/2
10
Sin(θ=180)
5
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
30
30
Io
0A
25
0V
20
DC
15
t
T
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
t
DC
15
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
VR
D=t/T
VR=20V
Tj=150°C
D = 1/2
10
Sin(θ=180)
5
0
0V
20
0
50
Io
0A
25
0
25
50
75
100
125
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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© 2013 ROHM Co., Ltd. All rights reserved.
20
15
10
AVE : 4.9kV
5
0
150
AVE : 23.3kV
25
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2013.06 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A