QS5K2 Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.85 0.7 1.6 2.8 zFeatures 1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). 0.4 zApplications Switching 0.16 Each lead has same dimensions Abbreviated symbol : K02 zPackaging specifications zInner circuit Package Type 0~0.1 0.3~0.6 (1) (5) Taping TR Code Basic ordering unit (pieces) (4) ∗2 ∗2 3000 QS5K2 ∗1 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Gate (2) Tr1 Source Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±2.0 ±8.0 0.8 3.2 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Limits 100 139 Unit °C/W °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ ∗ Mounted on a ceramic board Rev.A 1/3 QS5K2 Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. IGSS − Gate-source leakage − Drain-source breakdown voltage V(BR) DSS 30 − Zero gate voltage drain current − − IDSS 0.5 − Gate threshold voltage VGS (th) − 71 Static drain-source on-state − 76 RDS (on)∗ resistance − 110 − Yfs ∗ 1.5 Forward transfer admittance − 175 Input capacitance Ciss Output capacitance − 50 Coss Reverse transfer capacitance 25 − Crss Turn-on delay time − 8 td (on) ∗ Rise time − 10 tr ∗ Turn-off delay time − 21 td (off) ∗ Fall time − 8 tf ∗ Total gate charge − 2.8 Qg ∗ Gate-source charge − 0.6 Qgs ∗ Gate-drain charge 0.8 − Qgd ∗ Max. 10 − 1 1.5 100 107 154 − − − − − − − − 3.9 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 4.5V ID= 2A, VGS= 4.0V ID= 2A, VGS= 2.5V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1A VGS= 4.5V RL= 15Ω RG=10Ω VDD 15V VGS= 4.5V ID= 2A Unit V IS= 3.2A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Forward voltage VSD ∗ − − Max. 1.2 Conditions ∗ Pulsed Rev.A 2/3 QS5K2 Transistors zElectrical characteristics curves Ciss 100 Coss Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed tf 100 td(off) td(on) 10 tr Crss 10 0.01 0.1 1 10 1 0.01 100 4 3 2 1 1 10 0 75°C 25°C −25°C 0.1 0.01 0.5 1.0 1.5 2.0 Fig.3 Dynamic Input Characteristics 10 Ta=25°C Pulsed ID=2A 200 ID=1A 100 0 2.5 VGS=4.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.1 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 2 3 4 5 6 7 8 9 10 75°C 1 10 1000 0.01 0.0 VGS=4.0V Pulsed 75°C 25°C −25°C 100 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=125°C 10 0.1 25°C −25°C 0.1 Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate source Voltage Fig.4 Typical Transfer Characteristics 1000 1 VGS=0V Pulsed Ta=125°C GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) 3 Fig.2 Switching Characteristics 0 0.001 0.0 2 TOTAL GATE CHARGE : Qg (nC) SOURCE CURRENT : IS (A) Ta=125°C 1 DRAIN CURRENT : ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) RG=10Ω Pulsed 300 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C VDD=15V 5 ID=2A 0 0.1 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage 6 GATE-SOURCE VOLTAGE : VGS (V) 1000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1000 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1