ROHM SP8K64

SP8K64
Transistors
4V Drive Nch+Nch MOSFET
SP8K64
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
zApplication
Switching
Each lead has same dimensions
zEquivalent circuit
zPackaging specifications
Package
Type
(8)
Taping
(7)
(6)
(5)
TB
Code
Basic ordering unit (pieces)
2500
SP8K64
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD
Tch
Tstg
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Drain current
(8) (7) (6) (5)
∗2
Limits
30
±20
±9
±36
1.6
36
2.0
1.4
150
−55 to +150
Unit
V
V
A
A
A
A
W/TOTAL
W/ELEMENT
°C
°C
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
1/4
SP8K64
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
30
−
1.0
−
−
−
6.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
14
17
18
−
1600
230
190
15
40
60
75
15.0
4.0
4.4
±10
−
1
2.5
19
23
24.5
−
−
−
−
−
−
−
−
22.5
−
−
Unit
µA
V
µA
V
Conditions
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=±20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=9A, VGS=10V
ID=9A, VGS=4.5V
ID=9A, VGS=4.0V
ID=9A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=4.5A, VDD 15V
VGS=10V
RL=3.33Ω
RG =10Ω
ID=9A, VDD 15V
VGS=5V
RL=1.67Ω, RG =10Ω
Unit
V
Conditions
IS=9A, VGS=0V
mΩ
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.2
∗Pulsed
2/4
SP8K64
Transistors
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
0.01
1.5
2.0
2.5
Ta=25°C
Pulsed
VGS=4.0V
VGS=4.5V
VGS=10V
10
0.01
3.0
0.1
1
10
1000
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
1
0.01
100
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current( I )
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
1000
100
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.01
0.1
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
100
1
0.01
0.1
1
10
100
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι )
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
10000
1
10
DRAIN CURRENT : ID (A)
Fig.7 Forward Transfer
Admittance vs.
Drain Current
100
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
100
0.01
Coss
Crss
0.1
1
10
100
100
Ta=25°C
Pulsed
90
80
ID=9A
70
ID=4.5A
60
50
40
30
20
10
0
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
VDS=10V
Pulsed
0.1
0.01
VGS=4V
Pulsed
DRAIN CURRENT : ID (A)
100
10
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
GATE-SOURCE VOLTAGE : VGS (V)
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10000
SWITCHING TIME : t (ns)
FORWARD TRANSFER ADMITTANCE : Yfs (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
0.001
1.0
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS=10V
Pulsed
CAPACITANCE : C (pF)
DRAIN CURRENT : ID (A)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
1000
tf
100
td (off)
td (on)
10
tr
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Switching Characteristics
3/4
SP8K64
Transistors
100
Ta=25°C
VDD=15V
ID=8A
RG=10Ω
Pulsed
SOURCE CURRENT : IS (A)
GATE-SOURCE VOLTAGE : VGS (V)
10
5
0
0
5
10
15
20
25
30
35
40
10
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.0
0.5
1.0
1.5
TOTAL GATE CHARGE : Qg (nC)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Dynamic Input Characteristics
Fig.11 Source Current vs.
Source-Drain Voltage
zMeasurement circuit
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
RL
VDS
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
ton
Fig.12 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.13 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.14 Gate Charge Test Circuit
Fig.15 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0