ROHM RUR040N02

RUR040N02
Transistors
1.5V Drive Nch MOSFET
RUR040N02
zDimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
TSMT3
zFeatures
1) 1.5V drive
2) Low On-resistance.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSMT3).
(1) Gate
Each lead has same dimensions
(2) Source
Abbreviated symbol : XF
(3) Drain
zApplication
Switching
zEquivalent circuit
zPackaging specifications
Package
Type
(3)
Taping
TL
Code
Basic ordering unit (pieces)
3000
RUR040N02
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
20
±10
±4.0
±8.0
0.8
8.0
1.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth (ch-a) ∗
Limits
125
Unit
°C / W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
1/4
RUR040N02
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
−
20
−
0.3
−
−
−
−
Typ.
−
−
−
−
25
33
42
55
Max.
±10
−
1
1.3
35
46
59
110
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
5.0
−
−
−
−
−
−
−
−
680
150
90
10
30
50
60
−
−
−
−
−
−
−
−
S
pF
pF
pF
ns
ns
ns
ns
∗
−
8
−
nC
∗
−
1.8
−
nC
∗
−
1.3
−
nC
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
RDS (on) ∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
∗
∗
∗
∗
∗
Conditions
VGS=±10V, VDS=0V
ID= 1mA, VGS=0V
VDS= 20V, VGS=0V
VDS= 10V, ID= 1mA
ID= 4.0A, VGS= 4.5V
ID= 4.0A, VGS= 2.5V
ID= 2.0A, VGS= 1.8V
ID= 0.8A, VGS= 1.5V
VDS= 10V, ID= 4.0A
VDS= 10V
VGS=0V
f=1MHz
ID= 2.0A, VDD 10V
VGS= 4.5V
RL 5Ω, RG=10Ω
ID= 4.0A, VDD 10V
VGS= 4.5V
RL 2.5Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
Typ.
Max.
Unit
−
−
1.2
V
Conditions
IS= 0.8A, VGS=0V
∗Pulsed
2/4
RUR040N02
Transistors
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1000
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
1000
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
VGS=1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
1000
Ta=25°C
Pulsed
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
100
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
10
Ta=25°C
Pulsed
ID=4.0A
ID=2.0A
60
40
20
0
0
VGS=1.5V
Pulsed
DRAIN CURRENT : ID (A)
100
80
10
1000
5
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source
On-State Resistance
vs. Gate-Source Voletage
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
0.1
0.01
0.0
10000
CAPACITANCE : C (pF)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE CURRENT : IS (A)
DRAIN CURRENT : ID (A)
VDS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
0.5
1.0
1.5
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
Coss
Crss
100
10
0.01
0.1
1
10
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.8 Source Current
vs. Source-Drain Voltage
Fig.9 Typical Capacitance
vs. Drain-Source Voltage
3/4
RUR040N02
SWITCHING TIME : t (ns)
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
1000
tf
100
td(off)
td(on)
10
tr
1
0.01
GATE-SOURCE VOLTAGE : VGS (V)
6
10000
FORWARD TRANSFER ADMITTANCE
Yfs (S)
Transistors
Ta=25°C
VDD=10V
ID=4.0V
RG=10Ω
Pulsed
4
2
100
0
0.1
1
0
10
1
2
3
4
5
6
7
8
VDS=10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
1
0.1
0.01
0.1
9 10 11
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Switching Characteristics
Fig.11 Dynamic Input Characteristics
Fig.12 Forward Transfer
Admittance vs. Drain Current
zMeasurement circuits
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
RL
VDS
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
ton
Fig.13 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.14 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.15 Gate Charge Test Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0