Datasheet - Silikron

2N7002KG8
Main Product Characteristics:
VDSS
60V
RDS(on)
7.5ohm(max.)
ID
A
SOT-363
Schematic diagram
Features and Benefits:





Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
0.115
A
IDM
0.8
A
PD
0.38
W
TJ,TSTG
-55 To 150
℃
RθJA
328
℃/W
Drain [email protected] Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 1 of 6
2N7002KG8
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Conditions
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±1
uA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
V
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
Input Capacitance
Clss
Typ
Max
V
1
VGS=10V, ID=0.5A
7.5
VGS=5V, ID=0.05A
7.5
VDS=10V,ID=0.2A
Units
Ω
0.08
VDS=15V,VGS=0V,
S
30
PF
6
PF
3
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD=30V, ID=0.2A,
20
nS
Turn-Off Delay Time
td(off)
VGS=10V,RGEN=10Ω
40
nS
F=1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Min.
Typ.
Max.
Units
—
—
0.115
A
—
—
0.8
A
—
—
1.3
V
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Conditions
MOSFET symbol
showing
D
the
integral reverse G
p-n junction diode.
IS=0.2A, VGS=0V
S
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 2 of 6
2N7002KG8
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 1: Switching
Test Circuit
Figure 2:
Switching Waveforms
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 3 of 6
2N7002KG8
Mechanical Data:
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 4 of 6
2N7002KG8
Ordering and Marking Information
Device Marking: 702
Package (Available)
SOT-363
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
SOT-363
3000
Tapes/Inner
Box
10
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
30000
4
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
Units/Carton
Box
120000
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2N7002KG8
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
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without obtaining the export license from the authorities concerned in accordance with the above law.
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written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
Technical[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
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