Datasheet - Silikron

SSF3036C
Main Product Characteristics:
NMOS
PMOS
VDSS
30V
-30V
RDS(on)
32.4mohm
61.6mohm
ID
4A
-3.6A
N-Channel Mosfet
P-Channel Mosfet
Schematic diagram
DFN 3x2-8L
Bottom View
Features and Benefits:


Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature



Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Max.
Parameter
P-Channel
4①
-3.6 ①
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current ②
16
-14.4
VGS
Gate to source voltage
±12
±12
V
PD @TC = 25°C
Power Dissipation ③
2.1
1.3
W
TJ
Operating Junction and Storage Temperature Range
-55 to + 150
-55 to + 150
°C
TSTG
(Silicon Limited)
N-Channel
A
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient (t ≤ 5s) ④
©Silikron Semiconductor CO.,LTD.
Typ.
—
2012.02.02
www.silikron.com
Max.
N-channel
P-Channel
60
95
Version : 1.0
Units
℃/W
page 1 of 6
SSF3036C
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Min.
Typ.
Max.
N-channel
30
—
—
P-Channel
-30
—
—
N-channel
—
32.4
36
P-Channel
—
61.6
65
N-channel
0.5
—
2
P-Channel
-0.5
—
-2
N-channel
—
—
1
P-Channel
—
—
-1
N-channel
—
—
100
N-channel
-100
—
—
P-Channel
—
—
100
P-Channel
-100
—
—
Units
Conditions
VGS = 0V, ID = 250μA
V
VGS = 0V, ID = -250μA
mΩ
VGS= 4.5V,ID = 4.8A
VGS= -4.5V,ID = -2.3A
VDS = VGS, ID = 250μA
V
VDS = VGS, ID = -250μA
μA
VDS =30V,VGS = 0V
VDS =-30V,VGS = 0V
VGS =12V
nA
VGS = -12V
VGS =12V
VGS =-12V
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Min.
Typ.
Max.
N-channel
—
—
4
P-Channel
—
—
-3.6
N-channel
—
—
16
Continuous Source Current
Conditions
MOSFET symbol
A
Pulsed Source Current
showing
the
integral reverse
p-n junction diode.
A
P-Channel
—
—
-14.4
N-channel
—
0.82
1.2
Diode Forward Voltage
IS=2.4A, VGS=0V
V
P-Channel
©Silikron Semiconductor CO.,LTD.
Units
—
-0.85
2012.02.02
www.silikron.com
-1.2
Version : 1.0
IS=-1.5A, VGS=0V
page 2 of 6
SSF3036C
Test circuits and Waveforms:
Switching time waveform:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Thermal characteristics
Figure1.
Normalized Thermal Transient Impedance, Junction-to-Ambient
©Silikron Semiconductor CO.,LTD.
2012.02.02
www.silikron.com
Version : 1.0
page 3 of 6
SSF3036C
Mechanical Data:
DFN 3X2_8L PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A3
D
E
b
L
e
Dimension In Millimeters
Nom
Max
0.750
0.800
0.050
0.200REF
2.950
3.000
3.050
1.950
2.000
2.050
0.250
0.300
0.350
0.280
0.350
0.420
0.650BSC
Min
0.700
0.000
©Silikron Semiconductor CO.,LTD.
Min
0.028
0.000
0.116
0.077
0.010
0.016
2012.02.02
www.silikron.com
Dimension In Inches
Nom
0.030
0.008REF
0.118
0.079
0.012
0.014
0.026BSC
Version : 1.0
Max
0.031
0.002
0.120
0.081
0.014
0.017
page 4 of 6
SSF3036C
Ordering and Marking Information
Device Marking: 3036C
Package (Available)
DFN 3x2-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/T Tubes/Inner
ube
Box
DFN 3x2-8L
3000pcs
10pcs
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner
Box
30000pcs
Inner
Boxes/Carton
Box
4pcs
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.02.02
www.silikron.com
Version : 1.0
Units/Carton
Box
120000pcs
page 5 of 6
SSF3036C
ATTENTION:
■
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■
■
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
Sales@silikron.com
Technical Support:
Technical@silikron.com
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: Sales@silikron.com
©Silikron Semiconductor CO.,LTD.
2012.02.02
www.silikron.com
Version : 1.0
page 6 of 6