RoHS RB715W RB715W SCHOTTKY BARRIER DIODE D T ,. L 1.60 1.00 0.20 FEATURES: 1.60 Power dissipation 0.30 PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range 0.50 TJ, Tstg: -55℃ to +150℃ CIRCUIT: R T 1 MARKING: 3D J E E ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter W N 0.81 SOT-523 3 C E L 2 O IC C O Symbol unless otherwise specified) Test conditions MIN MAX UNIT V(BR) IR= 100µA Reverse voltage leakage current IR VR=10V 1 µA Forward voltage VF IF=1mA 0.37 V Diode capacitance CD VR=1V, f=1MHz 2 pF Reverse breakdown voltage WEJ ELECTRONIC CO. Http:// www.wej.cn 40 V E-mail:[email protected]