PBSS5320D 20 V low V_CEsat PNP transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
MBD128
PBSS5320D
20 V low VCEsat PNP transistor
Product data sheet
2002 Jun 12
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
−20
V
IC
collector current (DC)
−3
A
ICM
peak collector current
−5
A
RCEsat
equivalent on-resistance
133
mΩ
• Improved device reliability due to reduced heat
generation
APPLICATIONS
• Supply line switching circuits
PARAMETER
MAX.
UNIT
PINNING
• Battery management applications
PIN
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
DESCRIPTION
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
PNP low VCEsat transistor in a SOT457 (SC-74) plastic
package.
6
MARKING
5
4
1, 2, 5, 6
TYPE NUMBER
MARKING CODE
3
PBSS5320D
52
4
1
Top view
Fig.1
2002 Jun 12
2
2
3
MAM466
Simplified outline (SOT457; SC-74) and
symbol.
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−20
V
VCEO
collector-emitter voltage
open base
−
−20
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−3
A
ICM
peak collector current
−
−5
A
IB
base current
−
−500
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
600
mW
Tamb ≤ 25 °C; note 2
−
750
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
note 1
208
K/W
note 2
160
K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
2002 Jun 12
3
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector-base cut-off current VCB = −20 V; IE = 0
MIN.
MIN.
MAX.
UNIT
−
−
−100
nA
VCB = −20 V; IE = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −100 mA
200
−
−
VCE = −2 V; IC = −500 mA
200
−
−
VCE = −2 V; IC = −1 000 mA; note 1
200
−
−
VCE = −2 V; IC = −2 000 mA; note 1
150
−
−
IC = −500 mA; IB = −5 mA
−
−
−130
mV
IC = −500 mA; IB = −50 mA
−
−
−80
mV
IC = −1 A; IB = −50 mA
−
−
−160
mV
IC = −2 A; IB = −20 mA; note 1
−
−
−400
mV
IC = −2 A; IB = −200 mA; note 1
−
−
−250
mV
IC = −3 A; IB = −300 mA; note 1
−
−
−400
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = −3 A; IB = −300 mA; note 1
−
85
133
mΩ
VBEsat
base-emitter saturation
voltage
IC = −2 A; IB = −200 mA; note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −1 A; note 1
−1.2
−
−
V
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
50
pF
FT
transition frequency
IC = −200 mA; VCE = −10 V;
f = 100 MHz
100
−
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Jun 12
4
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2002 Jun 12
REFERENCES
IEC
JEDEC
EIAJ
SC-74
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 12
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2002 Jun 12
Document order number: 9397 750 09759