PBSS5240T - NXP Semiconductors

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5240T
40 V, 2 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2001 Oct 31
2004 Jan 15
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
−40
V
IC
collector current (DC)
−2
A
ICM
peak collector current
−3
A
RCEsat
equivalent on-resistance
<220
mΩ
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistor.
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
PIN
• Supply line switching circuits
DESCRIPTION
• Battery management applications
1
base
• DC/DC converter applications
2
emitter
• Strobe flash units
3
collector
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
handbook, halfpage
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
3
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS5240T
2
1
2
ZF*
Top view
MAM256
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5240T
2004 Jan 15
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−2
A
ICM
peak collector current
−
−3
A
IBM
peak base current
−
−300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Tamb ≤ 25 °C; note 2
−
480
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
2004 Jan 15
3
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
VCB = −30 V; IE = 0
TYP.
MAX.
UNIT
−
−
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C −
−
−50
μA
−
−
−100
nA
IC = −100 mA
300
450
−
IC = −500 mA
260
350
−
IC = −1 A
210
290
−
IC = −2 A
100
180
−
−
−55
−100
mV
IC = −500 mA; IB = −50 mA
−
−70
−110
mV
IC = −750 mA; IB = −15 mA
−
−140
−225
mV
IC = −1 A; IB = −50 mA
−
−140
−225
mV
IC = −2 A; IB = −200 mA
−
−240
−350
mV
IBEO
emitter-base cut-off current
VEB = −4 V; IC = 0
hFE
DC current gain
VCE = −2 V
VCEsat
MIN.
collector-emitter saturation voltage IC = −100 mA; IB = −1 mA
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA;
note 1
−
160
<220
mΩ
VBEsat
base-emitter saturation voltage
IC = −2 A; IB = −200 mA
−
−
−1.1
V
VBE(on)
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA
−
−
−0.75
V
fT
transition frequency
IC = −100 mA; VCE = −10 V;
f = 100 MHz
100
200
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
23
28
pF
Note
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2004 Jan 15
4
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
MHC064
1000
MHC067
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
(1)
−800
(1)
−600
(2)
600
(2)
400
−400
(3)
(3)
200
−200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −2V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MHC066
−1200
−10
−102
Base-emitter voltage as a function of
collector current; typical values.
MHC068
−103
handbook, halfpage
handbook, halfpage
VBEsat
(V)
−103
−104
IC (mA)
VCEsat
(mV)
−1000
−102
−800
(1)
−600
(2)
(1)
(2)
(3)
−10
−400
(3)
−200
−10−1
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
MHC065
−3000
handbook, halfpage
(1)
(2)
(3)
(4)
IC
(mA)
MHC069
103
handbook, halfpage
RCEsat
(Ω)
(5)
102
(6)
−2000
(7)
(8)
10
(9)
−1000
(10)
0
−1
0
(1)
(2)
(3)
(4)
IB = −23.0 mA.
IB = −20.7 mA.
IB = −18.4 mA.
IB = −16.1 mA.
Fig.6
−2
−3
(5) IB = −13.8 mA.
(6) IB = −11.5 mA.
(7) IB = −9.2 mA.
−4
10−1
−10−1
−5
VCE (V)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(8) IB = −6.9 mA.
(9) IB = −4.6 mA.
(10) IB = −2.3 mA.
Collector current as a function of
collector-emitter voltage; typical values.
2004 Jan 15
(1)
(2)
(3)
1
Fig.7
6
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 15
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5240T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 15
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/02/pp9
Date of release: 2004 Jan 15
Document order number: 9397 750 12439