PreliminaryData Sheet NESG3400M01 R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 NPN Silicon Germanium RF Transistor DESCRIPTION The NESG3400M01 is an ideal choice for low noise, low distortion amplification. FEATURES • • • • • • • NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz Po (1 dB) = 21 dBm TYP. @ VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz OIP3 = 35.5 dBm TYP. @ VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz Maximum stable power gain: MSG =13.0 dB TYP. @ VCE = 3.3 V, IC = 40 mA, f = 1 GHz SiGe HBT technology (UHS3) : fT = 10 GHz This product is improvement of ESD 6-pin super minimold (M01 PKG) APPLICATIONS • Suitable for up to 1 GHz applications. e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV. ORDERING INFORMATION Part Number NESG3400M01 Order Number NESG3400M01-A NESG3400M01-T1 NESG3400M01-T1-A Package 6-pin super minimold (M01 PKG) (Pb-Free) Quantity 50 pcs (Non reel) Supplying Form • 8 mm wide embossed taping • Pin 4, 5, 6 face the perforation side of the tape 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Symbol VCBO Collector to Emitter Voltage (Base Short) VCES Ratings 5.5 13 Unit V V Collector to Emitter Voltage (Base Open) Base Current Note1 Collector Current Total Power Dissipation Note2 Junction Temperature Storage Temperature VCEO 5.5 V IB IC Ptot Tj Tstg 36 400 480 150 −65 to +150 mA mA mW °C °C Notes: 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 1 of 8 NESG3400M01 THERMAL RESISTANCE (TA = +25°C) Parameter Thermal Resistance from Note Junction to Ambient Note: Symbol Ratings 260 Rthj-a Unit °C/W Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Collector Current Symbol IC MIN. − TYP. 50 MAX. − Unit mA ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Symbol ICBO IEBO hFE Note1 fT 2 ⏐S21e⏐ Test Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 0.4 V, IC = 0 VCE = 3.3 V, IC = 15 mA − − 200 − − 300 100 100 400 nA nA − VCE = 3.3 V, IC = 40 mA, f = 1 GHz VCE = 3.3 V, IC = 40 mA, f = 1 GHz − 9.5 10.0 11.5 − − GHz dB Noise Figure (1) NF1 VCE = 3.3 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω − 0.65 1.05 dB Noise Figure (2) NF2 VCE = 3.3 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 0.7 − dB Associated Gain (1) Ga1 VCE = 3.3 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω 9.5 11.5 − dB Associated Gain (2) Ga2 VCE = 3.3 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 3.3 V, IE = 0, f = 1 MHz VCE = 3.3 V, IC = 40 mA, f = 1 GHz − 12.0 − dB − 11.0 0.9 13.0 1.1 − pF dB Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note 3 Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 21.0 − dBm Output 3rd Order Intercept Point 1 OIP3 1 VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz, Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt − 35.0 − dBm Output 3rd Order Intercept Point 2 OIP3 2 VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz, Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt − 35.5 − dBm Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. S21 3. MSG = S12 hFE CLASSIFICATION Rank Marking hFE Value YFB T1Q 200 to 400 R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 2 of 8 NESG3400M01 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 1 000 3.8 cm × 9.0 cm × 0.8 mm (t), FR-4 500 480 0 0 25 50 75 100 125 150 1.3 f = 1 MHz 1.2 1.1 1.0 0.9 0.8 0.0 2.0 3.0 4.0 5.0 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 6.0 100 VCE = 3.3 V VCE = 5 V 10 Collector Current IC (mA) Collector Current IC (mA) 1.0 1 0.1 0.01 0.001 10 1 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1 Base to Emitter Voltage VBE (V) 0.0001 0.4 0.6 0.8 1 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 300 1 850 μA 1 650 μA 1 450 μA 1 250 μA 250 200 1 050 μA 850 μA 150 650 μA 100 450 μA 250 μA 50 IB = 50 μA 0 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 3 of 8 NESG3400M01 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 5 V DC Current Gain hFE DC Current Gain hFE VCE = 3.3 V 100 10 1 10 100 10 1 1 000 100 1 000 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 3.3 V f = 1 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 10 Collector Current IC (mA) 20 15 10 5 0 100 1 10 100 Collector Current IC (mA) VCE = 5 V f = 1 GHz 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 4 of 8 NESG3400M01 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 3.3 V IC = 10 mA 40 35 30 |S21e| 20 MSG 15 MSG 10 5 0 0.01 0.1 1 10 35 30 MAG 2 25 |S21e| 20 MSG 15 MSG 10 5 0 0.01 0.1 1 10 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 3.3 V IC = 40 mA 40 35 |S21e| 2 MAG 25 20 MSG MSG 15 10 5 0 0.01 VCE = 5 V IC = 10 mA 40 Frequency f (GHz) 45 30 45 Frequency f (GHz) 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 MAG 2 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 45 45 VCE = 5 V IC = 40 mA 40 35 30 MAG |S21e|2 25 MSG 20 MSG 15 10 5 0 0.01 0.1 1 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG MAG 10 |S21e|2 5 VCE = 3.3 V f = 1 GHz 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 20 MSG 15 MAG 10 |S21e|2 5 VCE = 5 V f = 1 GHz 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 5 of 8 NESG3400M01 12 Ga 8 2 4 1 NF 0 100 10 300 VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz Pout 20 200 IC GL 10 0 –10 100 0 10 20 0 30 Input Power Pin (dBm) Collector Current IC (mA) Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) Linear Gain GL (dB) 3 0 1 30 16 VCE = 3.3 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Associated Gain Ga (dB) Noise Figure NF (dB) 4 OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 40 20 Pout 0 –20 –40 IM3 VCE = 3.3 V, IC (set) = 50 mA, f1 = 1.000 GHz f2 = 1.001 GHz –60 –80 –20 –10 0 10 20 30 Each Input Power Pin (each) (dBm) Remark The graphs indicate nominal characteristics. R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 6 of 8 NESG3400M01 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 Page 7 of 8 NESG3400M01 PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (M01 PKG) (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 6 5 2 3 4 0.65 0.65 1.3 T1Q 2.0+0.15 –0.20 1 1.25±0.1 0 to 0.1 0.15+0.1 –0.05 0.7 0.9±0.1 0.1 MIN. PIN CONNECTIONS 1. Base 2. Collector 3. Emitter R09DS0025EJ0100 Rev.1.00 Jul 26, 2011 4. N.C. 5. Collector 6. N.C. Page 8 of 8 Revision History Rev. 1.00 Date Jul 26, 2011 NESG3400M01 Data Sheet Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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