DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package <R> ORDERING INFORMATION Part Number Order Number 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A Package Quantity 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) Supplying Form 50 pcs (Non reel) • 8 mm wide embossed taping 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA Ptot 115 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Note 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10781EJ01V0DS (1st edition) (Previous No. P14658EJ3V0DS00) Date Published August 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2009 2SC5606 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 200 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 200 nA VCE = 2 V, IC = 5 mA 60 80 100 – VCE = 2 V, IC = 20 mA, f = 2 GHz – 21 – GHz ⏐S21e⏐ VCE = 2 V, IC = 20 mA, f = 2 GHz 10 12.5 – dB NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt – 1.2 1.5 dB Note 1 DC Current Gain hFE RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Note 2 Cre VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.21 0.3 pF MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz – 14 – dB MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz – 15 – dB Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 4. MSG = S21 S12 hFE CLASSIFICATION <R> 2 Rank FB/YFB Marking UA hFE 60 to 100 Data Sheet PU10781EJ01V0DS 2SC5606 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mW) 200 Mounted on Glass Epoxy Board (1.08 cm2 × 1.0 mm (t) ) 150 115 100 50 0 0 25 50 75 100 125 Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 1.0 f = 1 MHz 0.1 0.1 1.0 100.0 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 IB 100 μ A step VCE = 2 V 650 μ A 40 Collector Current IC (mA) Collector Current IC (mA) 10.0 Ambient Temperature TA (°C) 50 30 20 10 450 μ A 30 20 250 μ A 10 IB = 50 μ A 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 Base to Emitter Voltage VBE (V) 1 2 3 4 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 2 V DC Current Gain hFE <R> 100 10 0.1 1.0 10.0 100.0 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10781EJ01V0DS 3 2SC5606 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25 20 15 10 5 1 10 Insertion Power Gain |S21e|2 (dB) 5 10 25 20 15 10 5 1.0 35 100 VCE = 2 V IC = 20 mA 30 25 20 15 10 5 0 0.1 10.0 1.0 10.0 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 1 V f = 2 GHz 14 12 10 8 6 4 2 10 100 16 VCE = 2 V f = 2 GHz 14 12 10 8 6 4 2 0 1 10 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 1 INSERTION POWER GAIN vs. FREQUENCY 16 Insertion Power Gain |S21e|2 (dB) 10 INSERTION POWER GAIN vs. FREQUENCY VCE = 1 V IC = 10 mA 1 15 Collector Current IC (mA) 30 0 20 Collector Current IC (mA) 35 0 0.1 VCE = 2 V f = 2 GHz 25 0 100 Insertion Power Gain |S21e|2 (dB) 0 30 Gain Bandwidth Product fT (GHz) VCE = 1 V f = 2 GHz Insertion Power Gain |S21e|2 (dB) Gain Bandwidth Product fT (GHz) 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Data Sheet PU10781EJ01V0DS 100 2SC5606 NOISE FIGURE vs. COLLECTOR CURRENT 3.0 VCE = 2 V f = 2 GHz Noise Figure NF (dB) 2.5 2.0 1.5 1.0 0.5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10781EJ01V0DS 5 2SC5606 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 0.2+0.1 –0 1.6±0.1 0.8±0.1 3 0.15+0.1 –0.05 0 to 0.1 0.6 0.75±0.05 1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 6 0.3+0.1 –0 0.5 0.5 1.0 UA 1.6±0.1 2 Data Sheet PU10781EJ01V0DS 2SC5606 • The information in this document is current as of August, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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