UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS General Description The UAE1025Q is a 2-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of a pair of ESD diodes that steer positive or negative ESD current respectively positive or negative rail. And the capacitance of channel to ground is 1.2pF. A zener diode is integrated in the array between the positive and negative supply rails. In the typical applications, the negative rail pin is connected with the ground of the circuit protected. Thus, the positive ESD current is steered to the ground through the internal zener diode to protect the power supply of the circuit protected. UAE1025Q is ideal to protect high speed data lines. Features Application 2-channel ESD protection Provide ESD protection meeting IEC61000-4-2(ESD) ±15 KV air discharge ±10 KV contact discharge USB 2.0 Power and Data Line Protection Monitors and Flat Panel Displays Digital Visual Interface (DVI) 10/100/1000 Ethernet Video Graphics Cards Set-top box Super low capacitance between input and ground is no more than 1.4 pF Capacitance between I/O pins is no more than 0.7pF Low clamping voltage 5V low operating voltage Reliable silicon device avalanche breakdown structure Optimized package for easy high speed data lines PCB layout Pin Description ( SOT-143 ) Schematic & PIN Configuration( SOT-143 ) Ordering Information Part Ordering No. Part Marking Package UAE1025Q 25QM SOT-143 25Q Parts Code M Month Code UAE1025Q : 7” Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 3000 EA Page 1 UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Peak Pulse Power ( tp = 8/20 µs ) Ppk 250 W Peak Pulse Current ( tp = 8/20 µs ) IPP 12 A ESD per IEC 61000 – 4 – 2 (Air ) VESD1 ±15 KV ESD per IEC 61000 – 4 – 2 (Contact ) VESD2 ±12 KV TJ -55 ~ 125 TSTG -55 ~ 150 Operating Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Reverse Working Voltage Symbol VRWM Forward Voltage VF Reverse Breakdown Voltage VBR Reverse Leakage Current IR Positive Clamping Voltage VC1 Negative Clamping Voltage VC2 Junction Capacitance Between Channel Junction Capacitance Between I/O to GND Cj1 Cj2 Conditions Min. Typ Any Pin to GND IF =10mA It = 1mA Any Pin to GND VRWM = 5V , T=25 Any Pin to GND IPP = 1A , tp = 8/20 µs Positive pulse Any Pin to GND IPP = 1A , tp = 8/20 µs Negative pulse Any Pin to GND VR = 0V , f = 1MHz Between I/O Pin VR = 0V , f = 1MHz Any Pin to GND 0.4 0.8 Max. Unit 5 V 1.5 V 6 V 0.03 1 µA 8.5 12 V 1.8 V 0.6 0.7 pF 1.2 1.4 pF Page 2 UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS Typical Characteristics Page 3 UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS Typical Characteristics Page 4 UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS Application Information UAE6V8UF UAE6V8UW UAE0524A UAE0524B UAE1025Q UAE1025Q UAE1025Q Page 5 UAE1025Q 2-Line ESD Protection Low Capacitance Bi-direction TVS Package Information ( SOT-143 ) Page 6