SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE (℃) 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD1065M / HYESD1065P 6 Channel Low Capacitance ESD Protection Diode Array HYESD1065 is a 6-channel ultra low capacitance ESD protection diode array which includes surge rated to protect high speed data lines.Each channel consists of a pair of ESD diodes that steer positive or negative ESD current to either the positive or negative rail. Typical application, the negative rail pin ( Assigned as GND ) is connected with system ground. The Positive ESD current is steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage. FEATURES APPLICATION • 6 Channel ESD protection for high speed data line • HDMI / DVI ports • Provides ESD protection to IEC61000-4-2 level 4 • Display port - + 15KV Air Discharge • USB 3.0 port - + 8KV Contact Discharge • Flat panel Monitors / TVs • Ultra low capacitance • Cellular Handsets & Accessories • PCI Express - I/O to GND : 0.4pF ( Max ) - I/O to I/O : 0.25pF ( Max ) MECHANICAL INFORMATION • Low clamping voltage & 5V operation voltage • Case : MSOP-8 / DFN-10-4.1x2.0x0.5 Package • Pb-Free, Halogen Free, RoHS/WEEE Complian HYESD1065P DFN-10 HYESD1065M MSOP-8 PIN CONFIGURATION I/O 1 VDD I/O 2 GND I/O 1 I/O 6 VREF GND NC NC I/O 3 I/O 6 I/O 4 I/O 5 MSOP-8 I/O 2 I/O 5 I/O 3 I/O 4 DFN-10-4.1x2.0x0.5 REV.1, 20-Mar-2012 HYESD1065M / HYESD1065P Maximum Rating and Thermal Characteristics ( TC=25℃ ) Parameter Symbol Value Unit Peak Pulse Power(8/20μs) PPP 150 W Peak Pulse Current(8/20μs) IPP 5 A ESD per IEC 61000-4-2(Air) VESD +15KV V ESD per IEC 61000-4-2(Contact) VESD +8KV V Operating Temperature Range Top -55 to +125 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Electrical Characteristics ( TC=25℃, unless otherwise noted ) Parameter Test Condition Min Typ Max Unit - - 5 V IBR =1mA; I/O pin to GND 6 - IR VRWM =5V, T=25°C; I/O pin to GND - - 1 uA VC IPP=1A, tP=8/20us; Positive pulse; Any I/O pin to GND - 8.5 12 V Negative Clamping Voltage VC IPP=1A, tP=8/20us; Negative pulse; Any I/O pin to GND - 1.8 - V Junction Capacitance Between Channel CJ VR=0V, f=1MHz; Between I/O pins - 0.2 0.25 pF Junction Capacitance Between I/O And GND CJ VR=0V, f=1MHz; Any I/O pin to GND - - 0.4 pF Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping Voltage Symbol VRWM Any I/O pin to GND VBR V REV. 1, 20-Mar-2012 RATING AND CHARACTERISTIC CURVES HYESD1065M / HYESD1065P Typical Characteristic Curves ( TJ=25℃, UNLESS OTHERWISE NOTED ) FIG.2 - Pulse Waveform FIG.1 - Power Derating Curve 160 Percentage of IPP 120 Power Peak Value IRSM@8us 100 140 100 80 60 40 80 60 40 Half Value IRSM/2@20us 20 20 0 0 0 25 50 75 100 125 0 150 5 10 20 25 30 Time (us) Ambient Temperature (℃) FIG.4 - Clamping Voltage vs. Peak Pulse Current FIG.3 - Junction Capacitance vs. Reverse Voltage 0.5 20 0.4 0.3 Clamping Voltage (V) CJ, Junction Capacitance (pF) 15 IO / GND 0.2 IO / IO 0.1 15 10 5 Waveform tr=8us, td=20us F=1MHz 0 0 0 1 2 3 Reverse Voltage - VR (V) 4 0 1 2 3 4 5 6 7 Peak Pulse Current (A) REV. 1, 20-Mar-2012 HYESD1065M / HYESD1065P Order & Marking Information Part Number Package Marking Packing Q'ty HYESD1065M MSOP-8 1065 13" Reel 3K HYESD1065P DFN-10-4.1x2.0x0.5 65P 7" Reel 3K Package Outline Dimension MSOP-8 Package DFN-10 Package REV. 1, 20-Mar-2012