SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE (℃) 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD0524P 4 Channel Low Capacitance ESD Protection Diode Array HYESD0524P is a 4-channel ultra low capacitance ESD protection diode array which includes surge rated to protect high speed data lines.Each channel consists of a pair of ESD diodes that steer positive or negative ESD current to either the positive or negative rail. Typical application, the negative rail pin ( Assigned as GND ) is connected with system ground. The Positive ESD current is steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage. FEATURES APPLICATION • 4 Channel ESD protection for high speed data line • HDMI / DVI ports / Display port • Provides ESD protection to IEC61000-4-2 level 4 • USB 2.0 / 3.0 port - + 15KV Air Discharge • Flat panel Monitors / TVs - + 8KV Contact Discharge • Cellular Handsets & Accessories • PCI Express 、Serial ATA • Ultra low capacitance • PC / Note Book - I/O to GND : 0.9pF ( Max ) - I/O to I/O : 0.45pF ( Max ) MEC MECHANICAL INFORMATION • Low clamping voltage & 5V operation voltage • Case : DFN-10-2.5x1.0x0.6 Package • Pb-Free, Halogen Free, RoHS/WEEE Compliant HYESD0524P DFN-10 PIN CONFIGURATION NC NC GND NC NC 10 9 8 7 6 1 2 3 4 5 IN 1 IN 2 GND IN 3 IN 4 REV.1, 26-Mar-2012 HYESD0524P Maximum Rating and Thermal Characteristics ( TC=25℃ ) Parameter Symbol Value Unit Peak Pulse Power ( 8/20μs ) PPP 150 W Peak Pulse Current ( 8/20μs ) IPP 5 A ESD per IEC 61000-4-2 ( Air ) VESD +15KV V ESD per IEC 61000-4-2 ( Contact ) VESD +8KV V Operating Temperature Range Top -55 to +125 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Lead Soldering Temperature ( 10sec ) TL 260 ℃ Electrical Characteristics ( TC=25℃, unless otherwise noted ) Parameter Reverse Working Voltage Reverse Breakdown Voltage Symbol Test Condition Min Typ Max Unit - - 5 V IBR =1mA; I/O pin to GND 6 7 VRWM Any I/O pin to GND VBR V Reverse Leakage Current IR VRWM =5V, T=25°C; I/O pin to GND - 0.05 1 uA Positive Clamping Voltage VC IPP=1A, tP=8/20us; Positive pulse; Any I/O pin to GND - 9.5 15 V Negative Clamping Voltage VC IPP=1A, tP=8/20us; Negative pulse; Any I/O pin to GND - 1.8 - V Junction Capacitance Between Channel CJ VR=0V, f=1MHz; Between I/O pins - 0.35 0.45 pF Junction Capacitance Between I/O And GND CJ VR=0V, f=1MHz; Any I/O pin to GND - - 0.9 pF REV. 1, 26-Mar-2012 RATING AND CHARACTERISTIC CURVES HYESD0524P Typical Characteristic Curves ( TJ=25℃, UNLESS OTHERWISE NOTED ) FIG.2 - Pulse Waveform FIG.1 - Power Derating Curve 120 Peak Value IRSM@8us Percentage of IPP Percentage of Power 100 100 80 60 40 80 60 40 Half Value IRSM/2@20us 20 20 0 0 0 25 50 75 100 125 0 150 5 10 20 25 30 Time (us) Ambient Temperature (℃) FIG.4 - Clamping Voltage vs. Peak Pulse Current FIG.3 - Junction Capacitance vs. Reverse Voltage 1 20 0.8 0.6 Clamping Voltage (V) CJ, Junction Capacitance (pF) 15 IO / GND 0.4 IO / IO 0.2 15 10 Waveform tr=8us, td=20us F=1MHz 0 5 0 1 2 3 Reverse Voltage - VR (V) 4 5 0 1 2 3 4 5 6 Peak Pulse Current (A) REV. 1, 26-Mar-2012 HYESD0524P Order & Marking Information Part Number Package Marking Packing Q'ty HYESD0524P DFN-10-2.5x1.0x0.6 24P 7" Reel 3K Package Outline Dimension DFN-10 Package Top View Top Top View View Bottom View Side View REV. 1, 26-Mar-2012