SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227(ISOTOP) Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Maximum Ratings o 500 o o 500 VGS Continuous ±20 VGSM Transient ±30 ID25 TC=25oC TC=25oC;pulse width limited by max. TJM 44N50 44 48N50 48 44N50 176 48N50 192 Unit V V A A IAR TC=25oC 24 A EAR Repetitive 30 mJ dv/dt IS IDM; -di/dt 5 V/ns TJ o 520 W 600 V 100A/us; VDD VDSS' 150 C; RG=2 TC=25oC VRRM DIODE 31.88 8.20 o TJ=25 C to 150 C Inches Min. Max. 31.50 7.80 TJ=25 C to 150 C; RGS=1M IDM Millimeter Min. Max. A B VDGR PD o IFAVM TC=70 C; rectangular; d=0.5 60 A IFRM tp <10us; pulse width limited by TJ 800 A 180 W PD CASE Dim. o TC=25 C TJ -40…+150 TJM 150 Tstg -40…+150 VISOL Md Weight 50/60 Hz, RMS t=1 min 2500 IISOL t=1 s 3000 1 mA Mounting torque 1.5/13 Terminal connection torque(M4) 1.5/13 30 o C V~ Nm/Ib.in. g SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS RDS(on) Characteristic Values min. typ. max. 500 2 4 ±200 400 2 0.12 0.10 Test Conditions VGS=0V; ID=1 mA VDS=VGS; ID=8 mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC VGS=10V; ID=0.5ID25 44N50 48N50 Pulse test, t 300us, duty cycle d Unit V V nA uA mA 2% (TJ=25oC, unless otherwise specified) Symbol gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCK Characteristic Values min. typ. max. Test Conditions VDS=10V; ID=0.5ID25; pulse test 22 42 8400 900 280 270 60 135 30 60 100 30 0.24 0.05 VGS=0V; VDS=25V; f=1MHz VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 VGS=10V; VDS=0.5VDSS; ID=0.5ID25 RG=1 (External) Symbol typ. o TJ=25 C; VR=VRRM VR=0.8VRRM o TJ=125 C; VR=0.8VRRM o IF=7A; VGS=0V; TJ=150 C Pulse test, t trr IRM nC ns ns ns ns K/W K/W 300us, duty cycle d 2%; TJ=25 C II=1A; di/dt= - 200A/us; VR=30V; TJ=25oC o IF=60A; di/dt= - 480A/us; VR=350V; TJ=100 C Unit max. 200 uA 100 uA 14 mA 1.5 o 1.8 V 35 50 ns 19 21 A 0.7 K/W RthJC RthJK pF Characteristic Values Test Conditions min. VF S (TJ=25oC, unless otherwise specified) Ultra-fast Diode IR Unit 0.05 K/W