SIRECT SG50N06D2S

SG50N06D2S, SG50N06D3S
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
SG50N06D3S
SG50N06D2S
Symbol
Test Conditions
CASE
DIODE
IGBT
o
Dim.
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
Maximum Ratings
o
600
600
±20
±30
75
50
200
ICM=100
@ 0.8VCES
250
600
60
600
150
300
VCES
TJ=25 C to 150 C
VCGR
TJ=25oC to 150oC; RGE=1M
VGES
Continuous
VGEM
Transient
IC25
TC=25oC
IC90
TC=90oC
ICM
TC=25oC; 1 ms
SSOA
VGE=15V; TVJ=125oC; RG=10
(RBSOA)
Clamped inductive load; L=30uH
PC
TC=25oC
VRRM
IFAVM
TC=70oC; rectangular; d=50%
IFRM
tp 10ms; pulse width limited by TJ
PD
TC=25oC
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TJ
TJM
Tstg
Md
Mounting torque
Terminal connection torque(M4)
Weight
Inches
Min.
Max.
A
B
Unit
V
V
A
A
W
V
A
A
W
o
C
-40…+150
150
-40…+150
1.5/13
1.5/13
30
A
Nm/Ib.in.
g
o
(TJ=25 C, unless otherwise specified)
Symbol
Test Conditions
BVCES
IC=250uA; VGE=0V
VGE(th)
IC=250uA; VCE=VGE
ICES
VCE=0.8VCES;
VGE=0V;
600
2.5
o
TJ=25 C
o
TJ=125 C
IGES
VCE=0V; VGE=±20V
VCE(sat)
IC=IC90; VGE=15V
Characteristic Values
min.
typ.
max.
Unit
V
5.0
V
200
uA
1
mA
±100
nA
2.5
V
SG50N06D2S, SG50N06D3S
Discrete IGBTs
(TJ=25oC, unless otherwise specified)
Symbol
gts
Characteristic Values
Test Conditions
IC=IC90; VCE=10V
Pulse test, t
300us, duty cycle
min.
typ.
35
50
VCE=25V; VGE=0V; f=1MHz
290
50
Qg
110
IC=IC90; VGE=15V; VCE=0.5VCES
tri
td(off)
tfi
Eoff
td(on)
pF
30
Qgc
td(on)
S
4100
Cres
Qge
max.
2%
Cies
Coes
Unit
nC
35
o
Inductive load, TJ=25 C
50
ns
IC=IC90; VGE=15V; L=100uH
50
ns
VCE=0.8VCES; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
110
250
ns
150
220
ns
3.0
4.0
mJ
o
Inductive load, TJ=125 C
50
ns
tri
IC=IC90; VGE=15V; L=100uH
60
ns
Eon
VCE=0.8VCES; RG=Roff=2.7
3.0
mJ
td(off)
Remarks:Switching times may increase
200
ns
for VCE(Clamp)
250
ns
4.2
mJ
tfi
Eoff
0.8VCES' higher TJ or
increased RG
RthJC
0.50
RthCK
0.05
Symbol
Characteristic Values
Test Conditions
min.
IR
IRM
trr
RthJC
K/W
(TJ=25oC, unless otherwise specified)
Reverse Diode (FRED)
VF
K/W
typ.
o
IF=60A; TVJ=150 C
Pulse test, t 300us, duty cycle d
o
2%; TVJ=25 C
TVJ=25oC; VR=VRRM
TVJ=150oC
IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V
o
IF=1A; -di/dt=50A/us; VR=30V; TJ=25 C
Unit
max.
1.75
2.40
V
650
2.5
uA
mA
8.0
A
35
ns
0.85
K/W