SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode SUR20100 SUR20120 VRSM V 1000 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 70 17 220 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 130 140 110 120 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 85 80 60 60 A2s TVJ=150oC TVJ=150oC TVJ TVJM Tstg -40...+150 150 -40...+150 Ptot TC=25oC Md Mounting torque Weight A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings TVJ=45oC I2t VRRM V 1000 1200 Dim. o C 78 W 0.4...0.6 Nm 2 g SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 750 250 7 uA uA mA VF IF=12A; TVJ=150oC TVJ=25oC 1.87 2.15 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 18.2 m 1.6 60 K/W 60 ns rT RthJC RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 40 o _ VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low losses at high switching frequencies * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders 7 ADVANTAGES A * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes 6 70 A 60 5 50 IF T V J = 25°C T V J =100°C T V J =150°C 30 A T V J =100°C V R = 540V 40 Qr 3 max. I F =30A I F =60A I F =30A I F =15A IR M IF =30A IF =60A IF =30A IF =15A 4 40 50 T VJ =100°C V R = 540V C 30 20 2 20 typ. max. 10 1 10 0 0 1 VF 2 3 V typ. 0 0 1 4 10 100 A/ s 1000 0 -diF /dt F ig. 1 F orward current vers us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. 1.0 s 0.9 1.4 1.2 IR M Kf T VJ =100°C V R =540V trr 0.7 0.8 0.6 0.6 0.5 QR 0.4 max. IF =30A IF =60A IF =30A IF =15A 0.4 1200 V 50 1000 ns VFR V FR 40 800 30 600 400 20 tfr 10 typ. 0.2 0.0 0.1 0 40 T VJ 80 120 °C 160 F ig. 4 Dynamic parameters vers us junction temperature. 600 60 0.3 0.2 400 A/ s F ig. 3 P eak revers e current vers us -diF /dt. 0.8 1.0 200 -diF /dt 0 200 -diF /dt 400 A/ s 600 F ig. 5 R ecovery time vers us -diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e. T V J =125°C I F =30A 0 0 400 A/ s 600 200 -diF /dt F ig. 6 P eak forward voltage vers us diF /dt. 200 0 tfr