SUR12060 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode SUR12060 VRSM V 600 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=70oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 100 120 tbd A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 600 660 540 600 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1800 1800 1450 1500 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 600 Dim. o C 357 W 0.8...1.2 Nm 6 g SUR12060 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 3 0.75 20 mA VF IF=70A; TVJ=150oC TVJ=25oC 1.12 1.3 V VTO For power-loss calculations only 0.85 V TVJ=TVJM 3.5 rT RthJC RthCK RthJA trr IRM m 0.35 K/W 0.25 35 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=350V; IF=80A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C 35 50 ns 17 21 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR12060 Ultra Fast Recovery Epitaxial Diodes 7 T = 100°C C VJ V = 300V 6 R 150 A 125 IF Qr 100 IR M 60 IF =140A IF = 70A IF = 35A 5 4 T V J =150°C 80 A T V J = 100°C 70 V R = 300V IF =140A IF = 70A IF = 35A 50 75 40 3 T V J =100°C 50 30 2 25 1 T VJ =25°C 0 0.0 0.5 1.0 V VF 20 10 0 100 1.5 F ig. 1 F orward current I F versus V F F ig. 2 R everse recovery charge Q r versus -diF /dt 240 1.4 220 Qr F ig. 3 P eak reverse current I R M versus -diF /dt T V J = 100°C IF = 100A 3.0 s 2.5 tfr 2.0 V FR tfr I F =140A I F = 70A I F = 35A 30 1.5 20 1.0 10 0.5 160 IR M 0.6 600 A/ 800s 1000 -diF /dt 40 180 0.8 400 V FR 200 1.0 200 V 50 trr Kf 0 60 T V J = 100°C V R = 300V ns 1.2 0 A/ s 1000 -diF /dt 140 0.4 0 50 100 °C 150 0 200 400 T VJ F ig. 4 Dynamic parameters Q r, I R M versus T VJ 600 A/ 800s 1000 -diF /dt F ig. 5 R ecovery time trr versus -diF /dt 1 K/W D=0.7 0.5 Z thJC 0.1 0.3 0.2 0.01 0.05 S ingle P ulse 0.01 0.001 DS E I 120-06 0.01 0.1 1s t F ig. 7 T ransient thermal resistance junction to case at various duty cycles 10 0 0 200 400 600 800 diF /dt 0.0 1000 A/ s F ig. 6 P eak forward voltage V F R and tfr versus diF /dt