SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product 400mW Trigger Diode (DIAC) FEATURES - Surface Mount Device SOD-123 packaged - VBO=32V DB3 - Max. PD=400mW MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260°C/10s - Weight: 10.55mg (approximately) SOD-123 - Moisture sensitivity level 1 - Pb free and RoHS compliant APPLICATION - These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming, universal motor speed control, and heat control MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Repetitive Peak on-state Current Power Dissipation tp=20μs, f=100Hz Junction Temperature Storage Temperature Range PARAMETER Reverse Breakdown Voltage Breakdown Voltage Symmetry Dynamic Breakdown Voltage SYMBOL VALUE UNIT ITRM PD 2 400 A mW TJ - 40 to +125 o C TSTG - 40 to +125 o C SYMBOL SODDB3 SODDB3T SODDB3 SODDB3T SODDB3 SODDB3T VBO MIN TYP MAX 28 32 36 30 32 34 [|+VBO1 ||-VBO2 |] |△V±| ±3 ±2 5 9 Repetitive Peak on-state Current ITRM 2 Output Voltage VO 5 Leakage Current IR - Rest Time tr Breakdown current SODDB3 SODDB3T IBO 10 TEST CONDITION UNIT C=22nF V C=22nF V △I=[ IBO to IF=10mA] V tP=20μs, f=100Hz A Note V VB = 0.5VBO μA 1.5 μs 100 - 15 C=22nF μA Note: Test circuit for output voltage Document Number: DS_S1406002 Version: B15 SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 2 Power derating curve 1.08 200 1.06 150 Power dissipation (mW) VBO(TJ)/VBO(TJ=25oC) Fig.1 Relative variation of VBO vs. junction temperature 1.04 1.02 1 25 50 75 100 125 100 50 0 0 25 50 75 100 125 150 Ambient temperature (°C) Junction temperature (°C) Fig. 3 Peak pulse current vs. pulse duration Repetitive peak on-state current ITRM(A) 10 f=100Hz 1 0.1 0.01 10 100 1000 10000 tp(μs) Document Number: DS_S1406002 Version: B15 SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) SODDB3 RFG Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS SOD-123 DIM. A Unit (mm) Unit (inch) Min Max Min Max 1.40 1.80 0.055 0.071 B 3.55 3.85 0.140 0.152 C 0.45 0.70 0.018 0.028 D 2.55 2.85 0.100 0.112 E 0.95 1.35 0.037 0.053 F 0.05 0.15 0.002 0.006 G 0.50 REF 0.02 REF H - - 0.10 0.004 SUGGESTED PAD LAYOUT Unit (mm) Unit (inch) Min Min G 2.25 0.089 X 0.90 0.035 X1 4.05 0.159 Y 0.95 0.037 DIM. MARKING Note: Apply positive voltage in cathode line and apply negative in another electrode, it will show better I/V curve. It help user differentiate the direction of purpose. Cathode line Document Number: DS_S1406002 Version: B15 SODDB3/SODDB3T Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1406002 Version: B15