Newsletter 26-2015

NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
TSI10H100CW - TSI10H200CW
10A, 100V - 200V Trench Schottky Rectifiers
I2PAK
The TSI10H100CW – TSI10H100CW 10A, 100V – 200V high efficiency, low conduction
loss rectifiers are new products in Taiwan Semiconductor’s trench Schottky portfolio. The
patented MOS trench Schottky barrier technology supports lower forward voltage drop
(VF), higher standoff voltage (VRRM) and reduced switching losses for improved power
conversion efficiency.
Parameter
TSI10H100CW
TSI10H120CW
TSI10H150CW
TSI10H200CW
Unit
VRRM
100
Per device
Per diode
120
150
10
5
200
V
IF(AV)
IFSM
VF
(@5A)
IR
A
100
MAX TYP.
0.79 0.78
0.66 0.64
A
MAX
0.88
0.72
TYP.
0.81
0.67
MAX
0.91
0.75
TJ=25 °C
TJ=125 °C
TYP.
0.62
0.55
MAX
0.70
0.63
TYP.
0.69
0.58
TJ=25 °C
-
100
-
100
-
100
-
100
µA
TJ=125 °C
-
15
-
15
1.5
10
1.5
10
mA
V
Features:
Applications:





 Compact DC/DC converter
rectification
 Reverse battery protection
 Lighting
 Telecommunications
Patented Trench Schottky technology
Excellent high temperature stability (TJMax = 150⁰C)
Low forward conduction voltage (VF)
Low power loss/ high efficiency
High forward surge capability (IFSM)
ISSUE NO.26
NO.01
Jan 2015
MAY
2015
NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
Cross Reference:
TSC
VISHAY
TSI10H150CW
VI10150C
Package Information:
Reel Inner
Carton
Outline Box Size
Box
(Package)
(pcs) (inch) (pcs) (pcs)
I2PAK
3,000
-
-
Carton Size
(mm)
6,000 565x175x185
Gross
Weight
Packing Code
(kg/ carton)
7.8
C0G
Example Part #s:
TSI10H100CW C0G
TSI10H120CW C0G
Samples of TSI10H100CW - TSI10H200CW can be ordered on Product Detail page:
http://www.taiwansemi.com/en/search?all=1&q=TSI10H100
For pricing and more information, please contact TSC sales or authorized distributors
worldwide:
www.taiwansemi.com/en/contact
ISSUE NO.26
MAY 2015