NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com TSM80N1R2 Super Junction N-Channel MOSFET: 800V, 5.5A, 1.2Ω 2 2 1 2 1 2 3 TO-251 (IPAK) 3 TO-252 (DPAK) Taiwan Semiconductor is introducing the TSM80N1R2 800V N-channel power MOSFET to their high-voltage Super-Junction deep-trench product portfolio. The advanced Super-Junction technology is specifically designed to resolve the limitations of high voltage planar MOSFETs by improving the efficiency of load switching applications. TSM80N1R2 offers low RDS(ON) and low gate charge (Qg) requirements for faster switching and higher power operation. The RoHS compliant, and Halogen free DPAK and IPAK offer small, thermally efficient packages for space constrained power switching applications. Parameter Value Unit VDS 800 V 1.2 Ω 19.4 nC RDS(on) (max) VGS = 10V Qg Features: Applications: • • • • • Super-Junction technology High performance due to small figure-ofmerit High commutation performance ISSUE NO.41 SEP 2015 Power Supply Lighting NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com Cross Reference: TSC Package Infineon STM TSM80N1R2CH TO-251 (IPAK) IPU80R1K4CE STU7N80K5 TSM80N1R2CP TO-252 (DPAK) IPD80R1K4CE STD7N80K5 Package Information: Reel Reel Size Inner Box Carton Carton Size (pcs) (inch) (pcs) (pcs) (mm) TO-251 -- -- 3,750 30,000 585*350*315 15 C5G TO-252 2,500 13 5,000 25,000 370*370*290 13.2 ROG Outline (Package) Gross Weight Packing Code (kg/ carton) Samples of TSM80N1R2 Series can be ordered on Product Detail page: http://www.taiwansemi.com/en/search?all=1&q=TSM80N1R2 For pricing and more information, please contact TSC sales or authorized distributors worldwide: www.taiwansemi.com/en/contact ISSUE NO.41 SEP 2015