Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon Features • RoHS compliance SOT-363 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MBT3904DW Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 200 mA PD Total Device Dissipation TA=25 °C (Note 1) 150 mW Thermal Resistance, Junction to Ambient 833 °C/W -55 to +150 °C R θJA TJ,TSTG Junction and Storage, Temperature Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Note 2) 40 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 IBL Base Cutoff Current - 50 nA VCE=30V, VEB=3.0V ICEX Collector Cutoff Current - 50 nA VCE=30V, VEB=3.0V Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ 2010-03-12 Page 1 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW On Characteristics Symbol hFE Description Min. Max. 40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 60 - VCE=1V, IC=50mA 30 - VCE=1V, IC=100mA - 0.2 - 0.3 0.65 0.85 - 0.95 Description Min. Max. Unit Current Gain-Bandwidth Product 300 - MHz D.C. Current Gain VCE(sat) Collector-Emitter Saturation Voltage (Note 2) VBE(sat) Base-Emitter Saturation Voltage (Note 2) Unit - V V Conditions VCE=1V, IC=10mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA Small-signal Characteristics Symbol fT Cobo Output Capacitance - 4.0 pF Cibo Input Capacitance - 8.0 pF hie Input Impedance 1.0 10 KΩ hre Voltage Feedback Ratio 0.5 8.0 x 10-4 hfe Small-Signal Current Gain 100 400 - hoe Output Admittance 1.0 40 μ mhos NF Noise Figure - 5.0 dB Conditions VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE= 10 V, IC=1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE= 5.0V, IC= 100μA, RS=1.0kΩ, f=1.0kHz Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 2 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Switching Characteristics Symbol td tr ts tf Description Min. Max. Delay Time - 35 Rise Time - 35 Storage Time - 200 Fall Time - 50 Unit ns Conditions VCC= 3.0 V, VBE= -0.5 V IC= 10mA, IB1= 1.0mA VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA Equivalent Test Circuit Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time Total Shunt Capacitance of test jig and connectors Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 3 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Typical Characteristics Curves ( TJ =25°C --- TJ =125°C ) Fig.4- Charge Data Charge Q (pC) Capacitance (pF) Fig.3- Capacitance Collector Current IC (mA) Reverse Bias Voltage (V) Fig.6- Rise Time Time (ns) Rise Time tr (nS) Fig.5- Turn-On Time Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 4 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Fig.8- Fall Time Fall Time tf (ns) Storage Time ts (ns) Fig.7- Storage Time Collector Current IC (mA) Collector Current IC (mA) Typical Audio Small-Signal Characteristics Noise Figure Variations (VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz) Fig.10- Noise Figure Noise Figure NF (dB) Noise Figure NF (dB) Fig.9- Noise Figure Frequency f (kHz) Source Resistance RS (kΩ) Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 5 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW h Parameters (VCE=10V, f=1.0kHz, TA=25°C) Fig.11- Current Gain Current Gain hfe Output Admittance hoe (μ mhos) Fig.12- Output Admittance Collector Current IC (mA) Collector Current IC (mA) Fig.14- Voltage Feedback Ratio Input Impedance hie (KΩ) Voltage Feedback Ratio hfe (x10-4) Fig.13- Input Impedance Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 6 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Typical Static Characteristics DC Current Gain hFE (Normalized) Fig.15- DC Current Gain Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Fig.16- Collector Saturation Region Base Current IB (mA) Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 7 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW Fig.18- Temperature Coefficients Voltage (V) Temperature Coefficient (mV/°C) Fig.17- “On” Voltage Collector Current IC (mA) Collector Current IC (mA) Device Marking: MBT3904DW=MA Dimensions in mm DIM SOT-363 MIN MAX A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 0.65 REF D E 0.30 0.40 H 1.80 2.20 J - 0.10 K 0.80 1.10 L 0.25 0.40 M 0.10 0.25 Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 8 of 9 Dual General Purpose Transistor NPN+NPN Silicon MBT3904DW How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ 2010-03-12 www.taitroncomponents.com Page 9 of 9