Darlington Power Transistors (NPN) TIP150/151/152 Darlington Power Transistors (NPN) Features • Designed for use in automotive ignition, switching and motor control applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP150 TIP151 TIP152 Unit VCBO Collector-Base Voltage 300 350 400 V VCEO Collector-Emitter Voltage 300 350 400 V VEBO Emitter-Base Voltage 8.0 V Collector Current Continuous 7.0 A Collector Current Peak 10 A Base Current 1.5 A Power Dissipation upto TC=25°C 80 W Power Dissipation Derate above TA=25°C 640 mW/° C Thermal Resistance from Junction to Case 1.56 ° C /W -65 to +150 °C IC ICM IB PD RθJC TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/PG Page 1 of 4 Darlington Power Transistors (NPN) TIP150/151/152 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol *hFE *VCEO *VCBO *VCE(sat) *VBE(sat) ICEO Description Min. Max. 150 - VCE=5V, IC=2.5A 50 - VCE=5V, IC=5A 15 - VCE=5V, IC=7A TIP150 300 - V TIP151 350 - V TIP152 400 - V TIP150 300 - V TIP151 350 - V TIP152 400 - V - 1.5 V IC=1A, IB=10mA - 1.5 V IC=2A, IB=100mA - 2.0 V IC=5A, IB=250mA - 2.2 V IC=2A, IB=100mA - 2.3 V IC=5A, IB=250mA TIP150 - 250 TIP151 - 250 TIP152 - 250 D.C. Current Gain Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Unit Conditions IC=10mA, IB=0 IC=1.0mA, IB=0 Base-Emitter Saturation Voltage Collector-Emitter Cut-off Current VCE=300V, IB=0 μA VCE=350V, IB=0 VCE=400V, IB=0 IEBO Emitter-Base Cut-off Current - 15 mA VEB=8.0V, IC=0 *VF Forward Voltage of Commutation Diode - 3.5 V IF=7A Rev. A/PG www.taitroncomponents.com Page 2 of 4 Darlington Power Transistors (NPN) TIP150/151/152 Symbol hfe Cob Description Small-Signal Current Gain Min. Typ. Max. 200 - - Unit Conditions VCE=5V, IC=0.5A, f=1.0KHz VCB=10V, IE=0, Output Capacitance - - 150 pF td Delay Time - 30 - ns tr Rise Time - 180 - ns VCC=250V, IC=5.0A, IB1=-IB2=250mA, ts Storage Time - 3.5 - us tp=20us, Duty Cycle≤2.0% tf Fall Time - 1.6 - us f=1.0MHz *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Dimensions in inch (mm) TO-220 Rev. A/PG www.taitroncomponents.com Page 3 of 4 Darlington Power Transistors (NPN) TIP150/151/152 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/PG www.taitroncomponents.com Page 4 of 4