DTA143ZE PNP Digital Transistor

WILLAS
FM120-M+
DTA143ZE THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Features
•
•
SOT-523
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
.035(0.90)
.028(0.70)
•
•
•
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
.014(0.35)
.043(1.10)
Typ
Max
Unit
.035(0.90)
-50
--V
V
VIN
Input voltage
--5.0
-100
IO
Output MAXIMUM
current
-----CHARACTERISTICS
mA
RATINGS AND ELECTRICAL
IC(MAX)
-100
Pd
--- specified.
150
--mW
Ratings
atPower
25℃ dissipation
ambient temperature unless otherwise
Tj
Junction
temperature
--ć
Single
phase
half wave,
60Hz, resistive of inductive--load. 150
T
Storage
temperature
-55
--150
ć
stg
For capacitive load, derate current by 20%
RATINGS
Min
---30
.069(1.75)
.057(1.45)
Dimensions in inches and (millimeters)
.010(0.25)
.004(0.10)MIN.
Polarity : Indicated
[email protected]
cathode
Absolute• maximum
ratings
25к band
: Any
Symbol • Mounting Position
Parameter
VCC
Supply
voltage
• Weight : Approximated 0.011 gram
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
20
30
VRRM
Symbol
Min
Maximum RMS Voltage Parameter
VRMS Typ 14 Max 21Unit
VI(off)
-0.5
----V
Input voltage (VCC=-5V, IO=-100­A)
Maximum DC Blocking Voltage
---VDC --- 20 -1.3 30 V
V
(VO=-0.3V, IO=-5mA)
I(on)
VMaximum
Output voltage
=
(IORectified
/II -5mA/-0.25mA
--- IO ---0.3
V
Average
Forward
Current
O(on)
II
=
Input current (VI -5V)
--- ---1.8
mA
Surge
Current(V8.3
ms single
­A
IPeak
Output
current
=-50V,
VI half
0) sine-wave ---IFSM ---0.5
O(off) Forward
CC=
GI
DCon
current
gain(JEDEC
(VO=-5V,
=
IO -10mA)
80
----superimposed
rated load
method)
R1
Input resistance
3.29
4.7
6.11 K¡
Typical
Thermal Resistance (Note 2)
RΘJA
R2/R1
Resistance ratio
8.0
10
12
Typical Junction Capacitance (Note 1)
CJ
Transition frequency
f
--250
--MHz
T
-55
to
+125
Operating Temperature
Range f=100MHz)
TJ
(VO=-10V, IO=5mA,
Electrical
Characteristics
@Voltage
25к
Maximum Recurrent
Peak Reverse
Storage Temperature Range
14
40
15
50
16
60
18
80
120
200
28
35
42
56
70
105
140
50
60
80
100
150
200
1.0 .008(0.20)
.004(0.10)
30
40
120
.004(0.10)MAX.
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
115
150
40
.014(0.35)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
10
100
.035(0.90)
.028(0.70)
•
0.146(3.7)
0.130(3.3)
current is
capability,
low forward voltage drop.
• High
Pb-Free
package
available
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
freehigh-speed
product for
packing code suffix “H”
switching.
• Ultra
Epoxy• Silicon
meets epitaxial
UL 94 V-0
flammability
planar
chip, metal rating
silicon junction.
parts
meet 1
environmental standards of
• Lead-free
Moisure
Sensitivity
Level
/228 the configuration of an inverter circuit
Built-in MIL-STD-19500
bias resistors enable
product for
packinginput
code suffix
"G"
• RoHS
without
connecting
external
resistors
Halogen
free
product
for
packing
code
suffix "H"with complete
The bias resistors consist of thin-film resistors
Mechanical
data
isolation to allow negative biasing of the input. They also have the
advantage
of :almost
completely
UL94-V0
rated flameeliminating
retardant parasitic effects.
• Epoxy
Only the
on/off
conditions
need
to
be set for operation, making
• Case : Molded plastic, SOD-123H
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Average Reverse Current at
*Marking:
@T
A=25℃ E13
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
.006(0.15)
0.85
0.70
0.9
0.5
0.92
10
Dimensions in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ZE THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
Characteristics
design,
excellent power dissipation offers
• Batch processON
INPUT VOLTAGE
VI(ON)
-10
-3
-1
VCC=-5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=100 ℃
-1
0.071(1.8)
0.056(1.4)
-0.3
Ta=25℃
-0.1
Mechanical data
-0.3
SOD-123H
-3
(mA)
(V)
-30
OFF Characteristics
-10
IO
better reverse leakage current and thermal resistance.
V =-0.3V
• Low profile surface mounted application inO order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
=25℃
a
MIL-STD-19500T/228
RoHS
product
for
packing
code suffix "G"
•
Ta=100
℃
Halogen free product for
packing
code suffix "H"
OUTPUT CURRENT
-100
-0.03
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
-0.1
: Molded-1plastic,-3SOD-123H
-0.1• Case-0.3
-10
-100
-30
,
OUTPUT CURRENT
(mA)
• Terminals :Plated
terminals,I solderable
per MIL-STD-750
-0.01
-0.2
-0.4
0.031(0.8)
Typ.
-0.6
-0.8
INPUT VOLTAGE
VI(OFF)
O
-1.0
-1.2 Typ.
0.031(0.8)
(V)
Method 2026
• Polarity : Indicated by cathode band
G —— I
• Mounting PositionI : Any O
• Weight : Approximated 0.011 gram
1000
300
Dimensions in inches and (millimeters)
VO(ON) ——
IO
-1000
IO/II=20
VO=-5V
(mV)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-300
RATINGS
30
Maximum
Recurrent Peak Reverse Voltage
10
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
3
1
Peak Forward
Surge
Current-18.3 ms single half sine-wave
-0.1
-10
-0.3
-3
superimposed on rated load
(JEDEC
method) I
OUTPUT
CURRENT
Typical Thermal Resistance (Note 2)
O
-30
IFSM
VR
120
200
21-30
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
-0.3
1.0
-330
-1
40
120
TJ
-55 to +125
400
PD
-30
-10
IO
-100
(mA)
-55 to +150
——
Ta
- 65 to +175
f=1MHz
Ta=25℃
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
(mW)
VF
(pF)
@T A=125℃
PD
IR
POWER DISSIPATION
CO
115
150
TSTG
Maximum Average Reverse Current at @T A=25℃
OUTPUT CAPACITANCE
18 Ta=25℃ 10
80
100
CJ
Maximum Forward Voltage at 1.0A DC
NOTES:
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
16
60
OUTPUT CURRENT
CHARACTERISTICS
Rated DC Blocking Voltage
15
50
RΘJA
14
40
-10
-0.1
-100
(mA)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CO ——
12 Temperature Range
Storage
13
30
IO
Maximum Average Forward Rectified Current
8
V0
-100
Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-M
FM140-MH FM150-MH FM160-MH
SYMBOL FM120-MH FM130-MH
Marking Code
10
OUTPUT VOLTAGE
DC CURRENT GAIN
GI
Ratings at 25℃ ambient Ttemperature
unless otherwise specified.
=100℃
a
100
Single
phase half wave, 60Hz, resistive of inductive load.
T =25℃
For capacitive load, derate currenta by 20%
2- Thermal Resistance From Junction to Ambient
4
0.50
0.70
300
0.9
0.85
0.5
0.92
10
250
200
DTA143ZE
150
100
2
50
0
0
-0
2012-06
2012-0
-4
-8
-12
REVERSE BIAS VOLTAGE
-16
VR
(V)
-20
0
25
50
75
100
125
150
T (℃ )
WILLAS
ELECTRONIC COR
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
PNP
Digital
Transistor
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
FM120-M+
DTA143ZE THRU
FM1200-M+
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1)low
(2)forward voltage drop.
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High DTA143ZE –T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.