WILLAS FM120-M+ DTA114TE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features• Low power loss, high efficiency. x 0.071(1.8) Value 0.031(0.8) Typ. .043(1.10) .035(0.90) Unit Junction Temperature Range RATINGS Storage Marking Temperature Code Range V mA mW к -55~150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH к13 -55~150 12 14 15 16 18 10 115 120 .008(0.20) 20 30 40 50 60 80 100 150 200 VRRM TJ TSTG Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRMS 14 21 28 35 42 .004(0.10) 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Electrical Characteristics Sym V CHARACTERISTICS V 150 .014(0.35) .010(0.25)0.031(0.8) Typ. Dimensions in inches and (millimeters) Collector-Base Voltage VCBO -50 AND ELECTRICAL Collector-Emitter Voltage MAXIMUM RATINGS VCEO -50 Emitter-Base voltage VEBO -5 specified. Ratings at 25℃ ambient temperature unless otherwise CollectorSingle Current-Continuous IC of inductive load. -100 phase half wave, 60Hz, resistive CollectorFor Dissipation C capacitive load, derate current byP20% 0.056(1.4) .067(1.70) .059(1.50) 0.040(1.0) 0.024(0.6) Method 2026 • Polarity : Indicated by cathode band Mounting Position : Any • Absolute Maximum Ratings • Weight : ApproximatedSymbol 0.011 gram Parameter 0.012(0.3) Typ. .069(1.75) .057(1.45) x High current capability, low forward voltage drop. Pb-Free •package is available • High surge capability. RoHS product for packing code suffix ”G” for overvoltage protection. • Guardring Halogen •free for packing code suffix “H” Ultraproduct high-speed switching. chip, metal silicon junction. • Silicon Epoxy meets ULepitaxial 94 V-0 planar flammability rating Lead-free parts Moisure •Sensitivity Levelmeet 1 environmental standards of MIL-STD-19500 /228 Built-in bias resistors enable the configuration of an inverter circuit RoHS product for packing code suffix "G" • without connecting external input resistors (see equivalent circuit) Halogen free product for packing code suffix "H" The bias resistors consist of thin-film resistors with complete Mechanical data isolation to allow negative biasing of the input. They also have the : UL94-V0 rated flame retardantparasitic effects • Epoxy advantage of almost completely eliminating Only the •on/off conditions need to be set for operation, making Case : Molded plastic, SOD-123H , device design easy • Terminals :Plated terminals, solderable per MIL-STD-750 .004(0.10)MIN. • • x 0.146(3.7) 0.130(3.3) .035(0.90) .028(0.70) • SOT-523 Peak Forward Surge Current 8.3 ms single half sine-wave Parameter Min IFSM Typ Max Unit 1.0 .004(0.10)MAX.30 .035(0.90) .028(0.70) superimposed on ratedBreakdown load (JEDECVoltage method) Collector-Base -50 ----V(BR)CBO V =-50uA, Resistance IE=0) (ICThermal 40 Typical (Note 2) RΘJA Collector-Emitter Breakdown Voltage 120 .014(0.35) -50 --V V(BR)CEO Typical Junction Capacitance (Note 1) C--J (IC=-1mA, IB=0) -55 to +125 -55 to +150 Operating Temperature Range T J Emitter-Base Breakdown Voltage .006(0.15) -5 ----V V(BR)EBO IC=0)Range (IE=-50uA, - 65 to +175 Storage Temperature TSTG Collector Cut-off Current -----0.5 uA ICBO (VCB=-50V, IE=0) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL Emitter Cut-off Current Dimensions in inches and (millimeters) ---0.5 uA 0.50 IEBO Maximum Forward Voltage at 1.0A DC 0.9 0.92 VF--0.70 0.85 (VEB=-4V, IC=0) DC Current Gain 0.5 Maximum Average Reverse Current at @T A=25℃ 100 600 --hFE I250 R (VCE=-5V, IC=-1mA) 10 @T A=125℃ Rated DC Blocking Voltage Collector-Emitter Saturation Voltage -----0.3 V VCE(sat) (IC=-10mA, IB=-1mA) NOTES: R1 Input Resistor 13 K¡ 7 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Transition Frequency --250 --MHz fT IC=-5mA, f=100MHz) (VCE=-10V, 2- Thermal Resistance From Junction to Ambient *Marking: 94 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114TE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114TE THRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. Tape& Reel: 3 Kpcs/Reel surge capability. G ‐WS • HighDTA114TE–T Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.