Preliminary Datasheet RJE0616JSP Silicon P Channel MOS FET Series Power Switching REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features For Automotive applications Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 77 m Typ, 90 m Max (VGS = –10 V) High density mounting AEC-Q101 compliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 5 7 6 D D 3 1 2 D 6 5 D 7 8 4 4 G Temperature Sensing Circuit Latch Circuit 1, 2, 3 4 5, 6, 7, 8 Current Limitation Circuit Gate Resistor Source Gate Drain Gate Shut-down Circuit 2 1 S S 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol Ratings VDSS –60 VGSS –16 VGSS 2.5 Drain current ID Note3 –4 Body-drain diode reverse drain current IDR –4 Avalanche current IAP Note 2 –4 Avalanche energy EAR Note 2 68.6 Channel dissipation Pch Note 1 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1 When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s 2. Tch = 25C, Rg 50 3. It provides by the current limitation lower bound value. REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Unit V V V A A A mJ W C C Page 1 of 7 RJE0616JSP Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Symbol VIH VIL IIH1 IIH2 Min –3.5 — — — — — — — Typ — — — — — –0.8 –0.35 175 Max — –1.2 –100 –50 –1 — — — Unit V V A A A mA mA C –3.5 –4 — — –12 — V A Min — — –4 –60 Typ — — — — Max –4 –10 — — Unit A mA A V Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 IDSS2 –16 2.5 — — — — — — — — — — — — — — –0.8 –0.35 — — — — –100 –50 –1 100 — — –10 –10 V V A A A A mA mA A A IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VGS(off) RDS(on) –2.2 — — 102 –3.4 150 V m RDS(on) Coss td(on) tr td(off) tf 77 290 3.20 2.80 1.55 1.05 –0.84 90 — — — — — — m pF s s s s V ID = –2 A, VGS = –10 V VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –2 A, RL = 15 IF = –4 A, VGS = 0 diF/dt = 50 A/s VGS = –5 V, VDD = –16 V IIL IIH(sd)1 Input current (Gate shut down) IIH(sd)2 Tsd Shut down temperature Gate operation voltage Vop Drain current (Current limitation value) ID limt Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS 500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Notes; 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Input current (shut down) Zero gate voltage drain current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Body-drain diode forward voltage VDF — — — — — — — Body-drain diode reverse recovery time trr — 84 — ns tos1 — 6.34 — ms Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Over load shut down Note 6 operation time VDS = –48 V, VGS = 0, Ta = 125C VDS = –10 V, ID = –1 mA ID = –2 A, VGS = –6 V Note 5 Note 5 IF = –4 A, VGS = 0 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Page 2 of 7 RJE0616JSP Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 3.0 2.0 ) −4 −4.8 V −4.2 V VGS = −4 V −1 Drain Current ID (A) Drain Current ID (A) −4.4 V −4.6 V −100 VDS = −10 V Pulse Test −7 V −2 7 0s −10 Typical Transfer Characteristics −10 V −6 V −5 V te ≤1 −1 Note 7: When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics −3 No W −0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) −4 m s Operation in this area is limited RDS(on) 0.1 0.01 −0.01 200 10 (P 150 = n 100 1 tio 50 m s PW ra 0 1 pe 0 10 O 1.0 Ta = 25°C Thermal shut down operation area Drain Current ID (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) DC Channel Dissipation Pch (W) 4.0 −3 Tc = 150°C −2 25°C −1 −40°C Pulse Test −2 −4 −6 −8 −10 −2 0 −4 −6 −8 −10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current −1000 Pulse Test −800 −600 ID = −2 A −400 −1 A −0.5 A −200 −0 −2 −4 −6 −8 −10 −12 −14 −16 Gate to Source Voltage VGS (V) REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 0 1000 Pulse Test VGS = −6 V 100 −10 V 10 −0.1 −1 −10 Drain Current ID (A) Page 3 of 7 Preliminary Body-Drain Diode Reverse Recovery Time Static Drain to Source On State Resistance vs. Temperature 200 1000 ID = −2 A Pulse Test −1 A −0.5 A 150 100 VGS = −6 V ID = −0.5 A, −1 A, −2 A 50 VGS = −10 V 0 −50 −25 0 25 50 Reverse Recovery Time trr (ns) Static Drain to Source On State Resistance RDS(on) (mΩ) RJE0616JSP 75 100 125 150 10 −0.1 −1 −10 Reverse Drain Current IDR (A) Switching Characteristics Reverse Drain Current vs. Source to Drain Voltage −4 Reverse Drain Current IDR (A) td(on) tr td(off) 1 tf 0.1 VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % 0.01 −0.1 −1 −3 −2 VGS = 0 V, 5 V, 10 V −1 Pulse Test −0.4 −0.8 −1.2 −1.6 −2.0 Drain Current ID (A) Source to Drain Voltage VSD (V) Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage vs. Shutdown Time of Load-Short Test 1000 VGS = 0 f = 1 MHz 100 10 0 VGS = −5 V 0 −10 −10 −20 −30 −40 −50 −60 Drain to Source Voltage VDS (V) REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Gate to Source Voltage VGS (V) Switching Time t (μs) di / dt = 50 A / μs VGS = 0, Ta = 25°C Case Temperature Tc (°C) 10 Capacitance C (pF) 100 −16 −14 −12 −10 −8 −6 VDD = −16 V −4 −2 0 1 10 100 Shutdown Time of Load-Short Test PW (ms) Page 4 of 7 RJE0616JSP Preliminary Shutdown Case Temperature Tc (°C) Shutdown Case Temperature vs. Gate to Source Voltage 200 180 160 140 ID = −0.5 A dv / dt VGS ≥ 500 V/ ms 120 100 −2 0 −4 −6 −8 −10 Normalized Transient Thermal Impedance γs (t) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch − f(t) = γs (t) • θch − f θch − f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 PDM e uls D= tp PW ho 1s 0.001 100 μ PW T T 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin –10 V 50 Ω 0 REJ03G1944-0100 Rev.1.00 Jul 01, 2010 VDD Page 5 of 7 RJE0616JSP Preliminary Switching Time Test Circuit Vout Monitor Vin Monitor Switching Time Waveform Vin 10% D.U.T. RL Vin –10 V 50 Ω REJ03G1944-0100 Rev.1.00 Jul 01, 2010 90% VDD = –30 V 90% 90% Vout 10% td(on) tr 10% td(off) tf Page 6 of 7 RJE0616JSP Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min A1 A L1 L y Detail F D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJE0616JSP-00-J3 REJ03G1944-0100 Rev.1.00 Jul 01, 2010 Quantity 2500 pcs Shipping Container Taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. 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