RENESAS 2SK2788_11

Preliminary Datasheet
HAT2203C
R07DS0323EJ0500
(Previous: REJ03G0447-0400)
Rev.5.00
Mar 28, 2011
Silicon N Channel MOS FET
Power Switching
Features
 Low on-resistance
RDS(on) = 69 m typ.(at VGS = 4.5 V)
 Low drive current
 High density mounting
 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index band
4
5
6
2 3 4 5
DDD D
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
6
G
1
2
3
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
Ratings
20
±12
2
8
Unit
V
V
A
A
IDR
Pch Note2
Tch
Tstg
2
830
150
–55 to +150
A
mW
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
Page 1 of 6
HAT2203C
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Drain to Source leak current
Gate to Source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Min
20
±12
—
—
0.4
Typ
—
Max
—
Unit
V
—
—
—
±10
1
1.4
A
A
V
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, ID = 1 mA
Drain to Source on state resistance
RDS(on)
—
69
90
m
ID = 1 A, VGS = 4.5 VNote3
RDS(on)
—
107
150
m
ID = 1 A, VGS = 2.5 VNote3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
3
—
—
—
—
—
—
—
—
4.5
165
50
20
6
5
20
4
1.8
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
nC
ID = 1 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Qgs
Qgd
VDF
—
—
—
0.4
0.4
0.8
—
—
1.1
nC
nC
V
ID = 1 A
VGS = 10 V
RL = 10 
Rg = 4.7 
VDD = 10 V
VGS = 4.5 V
ID = 2 A
IF = 2 A, VGS = 0 Note3
Notes: 3. Pulse test
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
Page 2 of 6
HAT2203C
Preliminary
Main Characteristics
Power vs. Temperature Derating
(A)
-30 When using the FR4 board.
ID
n
Operation in
this area is
limited by RDS(on)
Ta (°C)
)
°C
-0.01
-0.01
25
200
=
-0.1
a
(T
Case Temperature
150
s
io
100
m
t
ra
50
m
s
10
pe
-0.3
-0.03
0
1
=
O
400
PW
-1
C
800
100 μs
10 μs
-10
-3
Drain Current
Pch (mW)
Ta = 25°C,1 shot Pulse
Test Conditions:
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
D
Channel Dissipation
1200
Maximum Safe Operation Area
-100
1600
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V DS (V)
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
2.5 V
VDS = 10 V
Pulse Test
2V
3V
4
1.5 V
2
25°C
8
ID
4.5 V
Drain Current
6
Drain Current
Pulse Test
8
ID
(A)
10 V
Typical Transfer Characteristics
10
(A)
10
−25°C
6
Tc = 75 °C
4
2
VGS = 1 V
0
2
4
6
Drain to Source Voltage
Pulse Test
300
200
ID = 2 A
100
1A
0.5 A
0
6
2
4
Gate to Source Voltage
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
8
V GS (V)
10
1
2
3
Gate to Source Voltage
4
5
V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Drain to Source On State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
0
8
10
V DS (V)
VGS = 2.5V
100
4.5V
10
0.1
Pulse Test
Ta = 25 °C
1
Drain Current
10
ID (A)
100
Page 3 of 6
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
200
160
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2203C
0.5 A
1A
ID = 2 A
120
VGS = 2.5 V
80
0.5 A
2A
4.5 V
40
1A
Pulse Test
0
−25
0
25
50
75
Case Temperature
100 125 150
10
3
Tc = −25°C
25°C
1
75°C
0.3
0.1
0.03
0.01
0.01
VDS = 10 V
Pulse Test
0.03
Tc ( °C)
0
VDD
4
2
VDD = 20 V
10 V
5V
0.8
1.6
2.4
3.2
Gate Charge Qg (nC)
Ciss
100
Coss
30
Crss
10
0
4
8
12
1000
5V
VGS = 0 , -5 V
4
24
20
V DS (V)
Switching Characteristics
100
td(off)
10
tr
td(on)
tf
2
Pulse Test
0
16
Drain to Source Voltage
Switching Time t (ns)
IDR (A)
Reverse Drain Current
300
1
10
6
1000
3
0
4.0
Reverse Drain Current vs.
Source to Drain Voltage
8
VGS = 0
f = 1 MHz
3000
Capacitance C (pF)
6
VGS (V)
VGS
VDD = 5 V
10 V
20 V
10
10
ID (A)
10000
8
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
3
1
Typical Capacitance vs.
Drain to Source Voltage
40
30
0.3
Drain Current
Dynamic Input Characteristics
ID = 2 A
0.1
0.4
0.8
1.2
Source to Drain Voltage
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
1.6
V SD (V)
2.0
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Page 4 of 6
HAT2203C
Preliminary
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
4.7 Ω
Vin
4.5 V
VDS
= 10 V
Vout
10%
10%
90%
td(on)
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
tr
10%
90%
td(off)
tf
Page 5 of 6
HAT2203C
Preliminary
Package Dimensions
JEITA Package Code
⎯
Package Name
CMFPAK-6
RENESAS Code
PWSF0006JA-A
Previous Code
CMFPAK-6 / CMFPAK-6V
MASS[Typ.]
0.0065g
D
A
e
c
E
A
HE
A
x M
LP
L
b
S A
e
A2
Reference
Symbol
A
A1
y S
S
e1
b
l1
b2
c
Pattern of terminal position areas
A-A Section
A
A1
A2
b
c
D
E
e
HE
L
LP
x
y
b2
e1
l1
Dimension in Millimeters
Min
0.7
0
0.7
0.15
0.1
1.9
1.6
2.05
0.1
0.15
Nom
0.2
0.15
2.0
1.7
0.65
2.1
0.2
Max
0.8
0.01
0.79
0.3
0.25
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.35
1.65
0.5
Ordering Information
Orderable Part Number
HAT2203C-EL-E
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
Quantity
3000 pcs
Shipping Container
Taping
Page 6 of 6
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Colophon 1.1