RENESAS HAT2244WP

Preliminary Datasheet
HAT2244WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1549-0410
Rev.4.10
May 13, 2010
Features




Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 10 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25°C, Rg  50 
3. Tc = 25°C
REJ03G1549-0410 Rev.4.10
May 13, 2010
Page 1 of 7
HAT2244WP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
Min
80
—
—
0.8
—
—
42
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
10
11.5
70
3520
410
160
1.2
60
9.5
9.0
9.5
14.5
56
Max
—
± 0.5
1
2.3
12.5
15.5
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
tf
VDF
trr
—
—
—
9.5
0.83
50
—
1.08
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD  30 V
RL = 2 
Rg = 4.7 
IF = 30 A, VGS = 0 Note4
IF = 30 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
REJ03G1549-0410 Rev.4.10
May 13, 2010
Page 2 of 7
HAT2244WP
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
10 μs
Drain Current ID (A)
Channel Dissipation
Pch (W)
40
30
20
10
0
50
100
150
100
1
0
m
s
10
μs
Operation in
this area is
limited by RDS(on)
1
PW =
10 ms
DC Operation
Tc=25°C
0.1
Ta = 25°C
0.01 1 shot Pulse
0.1 0.3
1
3 10 30 100 300 1000
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
3.1 V
VDS = 10 V
Pulse Test
10 V
2.9 V
40
Drain Current ID (A)
Drain Current ID (A)
10
30
2.7 V
20
10
VGS = 2.5 V
40
30
Tc = 75°C
20
25°C
10
–25°C
Pulse Test
2
4
6
8
0
10
1
2
3
5
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
250
Pulse Test
200
150
ID = 10 A
100
5A
50
2A
0
5
10
15
20
Gate to Source Voltage VGS (V)
REJ03G1549-0410 Rev.4.10
May 13, 2010
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
100
Pulse Test
50
20
VGS = 4.5 V
10
10 V
5
2
1
1
10
100
Drain Current ID (A)
Page 3 of 7
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source On State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAT2244WP
50
Pulse Test
40
30
1 A, 2 A, 5 A
20
VGS = 4.5 V
ID = 1 A, 2 A, 5 A
10
10 V
0
–25
0
25
50
75
100 125 150
Tc = –25°C
25°C
10
75°C
VDS = 10 V
Pulse Test
1
0.1
0.3
3
1
10
30
Drain Current ID (A)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
10000
Capacitance C (pF)
Ciss
50
20
10
0.1
1
1000
Coss
300
100
Crss
VGS = 0
f = 1 MHz
10
10
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
100
20
80
16
VDS = 50 V
25 V
10 V
VGS
60
VDS
40
12
8
20
4
VDS = 50 V
25 V
10 V
20
40
60
80
Gate Charge Qg (nc)
REJ03G1549-0410 Rev.4.10
May 13, 2010
0
100
1000
Switching Time t (ns)
ID = 30 A
0
3000
30
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
100
Case Temperature Tc (°C)
100
Drain to Source Voltage VDS (V)
1000
VGS = 10 V, VDS = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(off)
tf
10
td(on)
tr
1
0.1
1
10
100
Drain Current ID (A)
Page 4 of 7
HAT2244WP
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IF (A)
50
40
30
10 V
VGS = 0 V, –5 V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
100
IAP = 25 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
Source to Drain Voltage VSDF (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
Tc = 25°C
D=1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
t
ho
1s
θch - c(t) = γs (t) • θch - c
θch - c = 5°C/ W, Tc = 25°C
e
ls
pu
PDM
D=
0.001
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1549-0410 Rev.4.10
May 13, 2010
Page 5 of 7
HAT2244WP
Preliminary
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
L • IAP2 •
VDSS
VDSS - V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30 V
10%
90%
td(on)
REJ03G1549-0410 Rev.4.10
May 13, 2010
10%
tr
10%
90%
td(off)
tf
Page 6 of 7
HAT2244WP
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.545Typ
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
HAT2244WP-EL-E
Quantity
2500pcs
REJ03G1549-0410 Rev.4.10
May 13, 2010
Shipping Container
Taping
Page 7 of 7
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