Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4392
Power MOSFET
30V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UT4392 uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for being used in such applications:
high-Side DC/DC Conversion, notebook and sever.

FEATURES
* VDS(V)=30V
* ID=12.5 A (VGS=10V)
* High Density Cell Design for Ultra Low On-resistance
* RDS(ON)<[email protected]=10V
* RDS(ON)<[email protected]=4.5V

SYMBOL
D
D
D
D
S
S
G
S

ORDERING INFORMATION
Ordering Number
Note:
UT4392G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
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Pin Assignment
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S G D D
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D
8
D
Packing
Tape Reel
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UT4392

Power MOSFET
MARKING
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UT4392

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
12.5
A
Pulsed Drain Current
IDM
50
A
Power Dissipation(TA =25°C)
PD
3.0
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
MIN
Junction to Ambient (PCB mounted)
θJA
Junction to Case
θJC
Notes: 1. Pulse width limited by the Maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.

TYP
MAX
50
25
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
On State Drain Current (Note 1)
Static Drain-Source On-Resistance(Note 1)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS =24 V, VGS =0 V
VGS = ±20 V, VDS=0 V
30
VGS(TH)
ID(ON)
VDS =VGS, IDS =250 µA
VDS ≥ 5V, VGS = 10V
VGS =10 V, ID =12.5 A
VGS =4.5 V, ID =10 A
1
30
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0 V,
Output Capacitance
COSS
f=1.0MHz, (Note 2)
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =15V, VGS =10 V,
Gate Source Charge
QGS
ID =12.5A, (Note 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V,ID=1 A,VGEN=10 V
RG=6 Ω, RL=15 Ω, (Note 3)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =2.7 A, VGS =0V
Maximum Body-Diode Continuous Current
IS
(Note 4,5)
Notes: 1. Pulse Test: PW ≤300μS, Duty Cycle ≤2%
2. For DESIGN AID ONLY, not subject to production testing.
3. Switching time is essentially independent of operating temperature.
4. Pulse width limited by the Maximum junction temperature.
5. Surface Mounted on FR4 Board, t ≤ 10 sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
1.0
±100
1.8
9
13
V
µA
nA
3
V
A
11.5 mΩ
16.5 mΩ
2134
343
134
pF
pF
pF
26
6
5
17
3.5
40
6
nC
nC
nC
ns
ns
ns
ns
0.85
1.3
2.7
V
A
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TYPICAL CHARACTERISTICS
3.0
Body-Diode Continuous Current vs. Source
to Drain Voltage
12
2.5
2.0
1.5
1
0.5
0
Drain-Source On-State Resistance
Characteristics
14
Drain Current, ID (A)
Body-Diode Continuous Current, IS (A)

Power MOSFET
VGS=10V
ID=12.5A
10
8
VGS=4.5V
ID=10A
6
4
2
0
0
0.2
0.4
0.6
0.8
0
Source to Drain Voltage, VSD (V)
100
150
200
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
400
Drain Current,ID (µA)
250
Drain Current,ID (µA)
50
Drain to Source Voltage, VDS (mV)
200
150
100
50
350
300
250
200
150
100
50
0
0
0.5
1.0
1.5
Gate Threshold Voltage,VTH (V)
2.0
0
0
30
40
10
20
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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