6A60-S WTF TF6 al Triod e Th yri stor Bi-Di Dirrection onal riode Thy ris Features ■ Repetitive Peak off -State Voltage:600V ■ R.M.S On-State Current(IT(RMS)=5A) ■ High Commutation dv/dt ■ Isolation Voltage(VISO=1500V AC) General Description This device is fully isolated package suitable for AC switching application , phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.This device is approved to comply with applicable requirements by underwriters laboratories lnc. By using an internal ceramic pad , the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) Absolute Maximum Ratings (TJ=25℃ symbol unless otherwise specified) Parameter condition VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current ITSM Surge On-State Current Ratings Units 600 V 5 A 50/55 A 12.6 A2s 3 W 0.3 W Tc=89℃ One Cycle, 50Hz/60Hz, Peak,Non-Repetitive I2t PGM PG(AV) I2t Peak Gate Power Dissipation Average Gate Power dissipation IGM Peak Gate Current 2 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature -40~125 ℃ Storage Temperature -40~150 ℃ TJ TSTG A.C.1minute Thermal Characteristics Symbol Parameter Value Units RӨJC Thermal Resistance Junction to case 3.8 ℃/W RӨJA Thermal resistance Junction to Ambient 60 ℃/W Rev.A Oct.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WTF 6A60-S TF6 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol Items conditions Repetitive Peak Off-State Unit Typ Max - - 1.0 mA - - 1.4 V - - 20 - - 20 VD=VDRM,Single Phase, Half IDRM Wave TJ=125℃ Current VTM Ratings Min Peak On-State Voltage IT=7A,Inst.Measurement I+GT1 Ⅰ I-GT1 Ⅱ I-GT3 Ⅲ - - 20 V+GT1 Ⅰ - - 1.5 V-GT1 Ⅱ - - 1.5 V-GT3 Ⅲ - - 1.5 0.2 - - V 5.0 - - V/µs - 10 - mA VGD Gate Trigger Current Gate Trigger Voltage VD=6V,RL=10Ω Non-Trigger Gate Voltage TJ=125℃,VD=1/2VDRM Critical Rate of Rise Off-State TJ=125℃,[di/dt]c=-3.0A/ms, (dv/dt)c Voltage at Commutation IH VD=6V,RL=10Ω VD=2/3VDRM Holding Current mA V 2/5 Steady, keep you advance 6A60-S WTF TF6 1.Gate Ch aracteri sti cs Fig Fig1 Cha ris tic ate Curr ent vs.Max Fig.3 On St Sta Curre Maxiimum wer Di ss on Po Pow Diss ssiipati tio ate Curr ent Rating Fig.5 surge On-St n-Sta Curre epetiti ve) (Non-R (Non-Re tiv ate Volt age Fig.2 On-St n-Sta lta ate Curr ent vs.Allo wable Fig Fig..4 On St Sta Curre .Allow e Tem perature Cas ase emp Fig.6 Gate Trigg er Volt age vs. gge lta ction Tem perature Jun unc emp 3/5 Steady, keep you advance 6A60-S WTF TF6 er Curr ent vs. Fig.7 Gate Trigg igge Curre erma Fig.8 Transient Th The mall Impedance ction Tem perature Jun unc emp ger Ch aracteri sti cs Test Cir cuit Fig.9 Gate Trig igg Cha ris tic Circ 4/5 Steady, keep you advance 6A60-S WTF TF6 0F Pa ckage Dim ension TO-22 220 Pac Dime Unit:mm 5/5 Steady, keep you advance