WTF8A60

8A
60
WTF
TF8A
8A6
al Triod
e Th
yri
stor
Bi-Di
Dirrection
onal
riode
Thy
ris
Features
■ Repetitive Peak off -State Voltage:600V
■ R.M.S On-State Current(IT(RMS)=8A)
■ High Commutation dv/dt
■ Isolation Voltage(VISO=1500V AC)
■ Halogen free(WTF8A60-HF)
General Description
This device is fully isolated package suitable for AC switching
application , phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.This device is approved to comply with
applicable requirements by underwriters laboratories lnc.
By using an internal ceramic pad , the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ=25℃
symbol
Parameter
unless otherwise specified)
Ratings
Units
600
V
8.0
A
80/88
A
I2t
32
A2s
Peak Gate Power Dissipation
5.0
W
Average Gate Power dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
VISO
Isolation Breakdown Voltage(R.M.S.)
1500
V
Operating Junction Temperature
-40~125
℃
Storage Temperature
-40~150
℃
2.0
g
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
ITSM
Surge On-State Current
condition
Tc=89℃
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t
PGM
PG(AV)
TJ
TSTG
A.C.1minute
Mass
Rev.A May.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WTF
8A
60
TF8A
8A6
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Items
conditions
Repetitive Peak Off-State
Unit
Min
Typ
Max
-
-
2.0
mA
-
-
1.4
V
-
-
30
-
-
30
VD=VDRM,Single Phase, Half
IDRM
Wave TJ=125℃
Current
VTM
Ratings
Peak On-State Voltage
IT=12A,Inst.Measurement
GT1
Ⅰ
-
I GT1
Ⅱ
-
Ⅲ
-
-
30
GT1
Ⅰ
-
-
1.5
V GT1
Ⅱ
-
-
1.5
V-
Ⅲ
-
-
1.5
0.2
-
-
V
10
-
-
V/µs
-
15
-
mA
-
-
3.7
℃/W
I
+
I GT3
+
V
-
GT3
VGD
Gate Trigger Current
Gate Trigger Voltage
TJ=125℃,VD=1/2VDRM
Critical Rate of Rise Off-State
TJ=125℃,[di/dt]c=-4.0A/ms,
Voltage at Commutation
Rth(j-c)
VD=6V,RL=10Ω
Non-Trigger Gate Voltage
(dv/dt)c
IH
VD=6V,RL=10Ω
VD=2/3VDRM
Holding Current
Thermal Impedance
Junction to case
mA
V
2/6
Steady, keep you advance
8A
60
WTF
TF8A
8A6
1.Gate Ch
aracteri
sti
cs
Fig
Fig1
Cha
ris
tic
ate Curr
ent vs.Max
Fig.3 On St
Sta
Curre
Maxiimum
wer Di
ss
on
Po
Pow
Diss
ssiipati
tio
ate Curr
ent Rating
Fig.5 surge On-St
n-Sta
Curre
epetiti
ve)
(Non-R
(Non-Re
tiv
ate Volt
age
Fig.2 On-St
n-Sta
lta
ate Curr
ent vs.Allo
wable
Fig
Fig..4 On St
Sta
Curre
.Allow
e Tem
perature
Cas
ase
emp
er Volt
age vs.
Fig.6 Gate Trigg
igge
lta
ction Tem
perature
Jun
unc
emp
3/6
Steady, keep you advance
8A
60
WTF
TF8A
8A6
er Curr
ent vs.
Fig.7 Gate Trigg
igge
Curre
erma
Fig.8 Transient Th
The
mall Impedance
ction Tem
perature
Jun
unc
emp
ger Ch
aracteri
sti
cs Test Cir
cuit
Fig.9 Gate Trig
igg
Cha
ris
tic
Circ
4/6
Steady, keep you advance
8A
60
WTF
TF8A
8A6
Marking layout
-
: Winsemi Semiconductor Logo
WW : Weekly code(01-52)
YY :
Last two digit of calendar year
(10:2010;11:2011)
□ : HF
Null
Halogen free
Halogen
5/6
Steady, keep you advance
WTF
8A
60
TF8A
8A6
0F Pa
ckage Dim
ension
TO-22
220
Pac
Dime
Unit:mm
6/6
Steady, keep you advance