8A,200V Ultrafast Single Diode

WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
Features
�
Ultrafast recovery time
�
Soft Recovery characteristics
�
Low Recovery Loss
�
Low forward voltage
�
High reliability by planer design
�
Low leakage current
C
A2
A1
General Description
FRD from Winsemi utilizes advanced processing techniques to achieve
ultrafast recovery times and higher forward current. Its soft recovery
characteristics and high reliability suit for wide industrial applications.
Applications
� Freewheeling, Snubber, Clamp
� Inversion Welder
� PFC
� Plating Power Supply
� Ultrasonic Cleaner and Welder
� Converter & Chopper
� UPS
Absolute Maximum Ratings
Symbol
Value
Units
Maximum D.C.Reverse Voltage
300
V
VRRM
MaximumRepetitive Revers Voltage
300
V
Tc=110℃,Per Diode
30
A
IF(AV)
Average Forward Current
Tc=110℃,Per Package
60
A
RMS Forward Current
Tc=110℃,Per Diode
60
A
IFSM
No-Repetitive Peak Surge current
TJ=45℃,t=10ms,50Hz,Sine
300
A
PD
Power Dissipation
165
W
TJ
Junction Temperature
150
℃
-40~150
℃
VR
IF(RMS)
TSTG
Torque
RθJC
Parameter
Test Conditions
Storage Temperature Range
Module-to-Sink
Recommended
1.2
N.m
Thermal Resistance
Junction-to-Case
0.75
℃/W
6.0
g
Weight
WT-D003-Rev.A1 Jan.2014
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
WINSEM I
M ICROELECTRONICS
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M ICROELECTRONICS
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1010
WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
Electrical Characteristics TC=25℃
Value
Symbol
IRM
Parameter
Test Conditions
Units
Min
Typ
Max
VR=300V
-
-
20
μA
VR=300V,TJ=125℃
-
-
250
μA
IF=30A
-
1.1
1.3
V
IF=30A,TJ=125℃
-
1.0
-
V
-
38
-
ns
Reverse Leakage Current
VF
Forward Voltage Drop
Trr
Reverse Recovery Time
IF=1A,VR=30,di/dt=-200A/μs
Trr
Reverse Recovery Time
IF=30A,
TJ=25℃
-
50
-
ns
Trr
Reverse Recovery Time
VR=400V
TJ=125℃
-
75
-
ns
Qrr
Reverse Recovery Charge
diF/dt=-200A/μs
TJ=125℃
-
340
-
ns
IRRM
Max. Reverse Recovery Current
TJ=125℃
-
8.0
-
A
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WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
Typical Performance Curres
Fig.2 Reverse Recovery Change
Qr versus -diF/dt
Fig.1 Forward Current IF Versus VF
Fig.3 Peak reverse current IRM versus
-diF/dt
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Fig.4 Dynamic parameters Qr, IRM versus
TVJ
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WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
Fig.5 Recovery time trr versus -diF/dt
Fig.6 Peak forward voltage VFR and
tfr versus diF/dt
Fig.7 Transient thermal resistance junction to case
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Tel : 0755-82506288
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WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
To-3PB Package Dimension
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M ICROELECTRON ICS
www.winsemi.com
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M ICROELECTRON ICS
Tel : 0755-82506288
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Fax : 0755-82506299
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5/6
WDW60DK30B Product Description
A,
300
V Ultrafast Dual Diode
60
60A,
A,300
300V
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : 86-0755-82506257
FAX : 86-0755-82506299
Web Site : www.winsemi.com
WIN SEM I
M ICROELECTRON ICS
www.winsemi.com
WIN SEM I
M ICROELECTRON ICS
Tel : 0755-82506288
WIN SEM I
M ICROELECTRON ICS
Fax : 0755-82506299
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