20140417084139 5031

WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
Features
�
Ultrafast recovery time
�
Soft Reverse Recovery characteristics
�
Low Recovery Loss
�
Low forward voltage
�
High Surge Current Capability
�
Low leakage current
General Description
FRD from Winsemi utilizes advanced processing techniques to
achieve ultrafast recovery times and higher forward current Its soft
recovery characteristics and high reliability suit for wide industrial
applications.
Applications
� Freewheeling, Snubber, Clamp
� Inversion Welder
� PFC
� Plating Power Supply
� Ultrasonic Cleaner and Welder
� Converter & Chopper
� UPS
Absolute Maximum Ratings
Symbol
Value
Units
Maximum D.C.Reverse Voltage
300
V
VRRM
MaximumRepetitive Revers Voltage
300
V
IF(AV)
Average Forward Current
Tc=110℃,Per Diode
80
A
RMS Forward Current
Tc=110℃,Per Diode
110
A
IFSM
No-Repetitive Peak Surge current
TJ=45℃,t=10ms,50Hz,Sine
640
A
PD
Power Dissipation
250
W
TJ
Junction Temperature
150
℃
-55~150
℃
VR
IF(RMS)
TSTG
Torque
RθJC
Parameter
Test Conditions
Storage Temperature Range
Module-to-Sink
Recommended
1.1
N.m
Thermal Resistance
Junction-to-Case
0.5
℃/W
6.0
g
Weight
WT-D006-Rev.A1 Apr.2014
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WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
Electrical Characteristics TC=25℃
Value
Symbol
IRM
VF
Parameter
Test Conditions
Units
Min
Typ
Max
VR=300V
-
-
10
μA
VR=300V,TJ=125℃
-
-
10
mA
IF=80A
-
1.35
1.5
V
IF=80A,TJ=125℃
-
1.25
-
V
Reverse Leakage Current
Forward Voltage Drop
Trr
Reverse Recovery Time
IF=1A,VR=30,diF/dt=-200A/μs
-
30
-
ns
Trr
Reverse Recovery Time
IF=80A,VR=150V
-
50
-
ns
-
5
-
A
-
95
-
ns
-
9
-
A
-
0.6
-
-
IRRM
Trr
IRRM
diF/dt= -200A/ μs
Max.Reverse Recovery Current
Reverse Recovery Time
IF=80A,VR=150V
Max.Reverse Recovery Current
diF/dt= -200A/μs,TJ=125℃
S
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WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
150
160
90
t rr( ns )
I F( A)
1 2 5℃
120
1 2 5℃
120
80
60
2 5℃
40
30
25℃
0
0
0
0 .4
0 .8
1 .2
1 .6
100
2
200
400
300
500
diF /dt( A/u s)
V F( V)
Fig.1 Forward Voltage Drop vs Forward
Fig.2 Reverse Recovery Time vs diF/dt
Current
30
1000
25
800
I RRM(A)
Q RRM( nc )
1 2 5℃
20
15
1 2 5℃
600
25℃
400
10
5
200
2 5℃
0
0
200
100
300
500
400
100
200
di F/dt(A/us)
300
400
500
diF / dt(A/ us)
Fig.3 Reverse Recovery Current vs diF/dt
Fig.4 Reverse Recovery Charge vs diF/dt
1
100
80
Z thJC(K /W)
DC
IF (A)
60
40
0 .1
20
0
0 .0 1
25
50
75
100
125
0.001
175
150
Fig.5 Forward current vs.Case temperature
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0 .1
1
10
Rectangular Pulse Duration(seconds)
T C (℃ )
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Fig.6 Transient Thermal Impedance
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WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
Fig.7 Diode Reverse Recovery Test Circuit and Waveform
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WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
TO-3PB Package Dimension
Unit:mm
E
A
ФP
符 号
symbol
M in
Max
A
4 . 60
5. 00
B
2 . 90
3. 20
B1
1 . 90
2. 20
b
0 . 90
1. 10
c
0 . 50
0. 70
D
19. 40
20. 40
E
15. 40
15. 80
L2
D
Q
F
e
B1
L
B
e
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b
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c
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5 . 45(TYP )
F
1 . 40
1. 60
L
19. 50
20. 50
L2
3 . 30
3. 70
Q
4 . 90
5. 10
Q1
1 .3 0
1. 50
P
3 . 10
3. 50
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WDW80S30B
Product Description
80A,300V Ultrafast Single Diode
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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