WFP830

WFP830
on N-C
hann
el MOS
FET
Silic
Silico
N-Ch
nnel
MOSF
Features
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
G
D
correction and half bridge and full bridge resonant topology line a
TO220
S
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
4.5
A
Continuous Drain Current(@Tc=100℃)
2.9
A
18
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
73
W
0.55
W/℃
-55~150
℃
300
℃
dv/dt
(Note1)
Total Power Dissipation(@Tc=25℃)
PD
TJ, Tstg
TL
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.7
℃/W
RQCS
Thermal Resistance, Case to Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev, C Nov. 2008
[email protected] Microelectronics Co.,Ltd.,All rights reserved.
T02-2
WFP830
Electrical Characte
Characterristics (Tc = 25
25°°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS =500 V, VGS = 0 V
-
-
1
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
500
-
-
V
Break Voltage Temperature
Coefficient
ΔBVDSS/
ID=250μA, Referenced to 25℃
-
0.55
-
V/℃
Gate−source breakdown voltage
Drain cut−off current
ΔTJ
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 2.25A
-
1.16
1.5
Ω
Forward Transconductance
gfs
VDS = 40 V, ID =2.25A
-
4.2
Input capacitance
Ciss
VDS = 25 V,
-
800
1050
Reverse transfer capacitance
Crss
VGS = 0 V,
-
18
23
Coss
f = 1 MHz
-
76
100
Rise time
tr
VDD =250 V,
-
15
40
Turn−on time
ton
ID = 4.5 A
-
40
90
Fall time
tf
RG=25 Ω
-
85
180
Turn−off time
toff
-
45
100
-
32
44
-
3.7
-
-
15
-
Output capacitance
Switching time
Total gate charge (gate−source
Qg
plus gate−drain)
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
S
pF
ns
(Note4,5)
VDD = 400 V,
VGS = 10 V,
nC
ID = 4.5 A
(Note4,5)
−Drain Ratings and Characte
Source
Source−
Characterristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
4.5
A
Pulse drain reverse current
IDRP
-
-
-
18
A
Forward voltage (diode)
VDSF
IDR = 4.5 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR =4.5 A, VGS = 0 V,
-
305
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
2.6
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFP830
Fig. 1 On-State Characteristics
Fig.3 Capacitance Variation vs
Drain Voltage
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.2 Transfer Characteristics
Fig.4 Breakdown Voltage
Variation vs Temperature
Fig.6 Gate Charge Characteristics
3/7
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WFP830
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
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WFP830
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFP830
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFP830
TO-220C Package Dimension
Unit: mm
7/7
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