Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical Characteristics................................................................. 3~4 Rating and characteristic curves........................................................ 5~6 Pinning information........................................................................... 7 Marking........................................................................................... 7 Suggested solder pad layout............................................................. 7 Packing information.......................................................................... 8 Reel packing.................................................................................... 9 Suggested thermal profiles for soldering processes............................. 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A 600mA General Purpose PNP Epitaxial Planar Transistor Package outline SOT-23 .084(2.10) .068(1.70) (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data 0.051 (1.30) 0.003 (0.09) 0.083 (2.10) 0.007 (0.18) • 0.110 (2.80) • • FMBT2222A is recommended. Capable of 225mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H. 0.120 (3.04) purpose and amplifier applications. • As complementary type, the NPN transistor FMBT2222/ 0.012 (0.30) (BV CEO = -60V@I C=-10mA) • PNP silicon epitaxial planar transistor, is designed for general 0.020 (0.50) • High collector-emitterbreakdien voltage. 0.034 (0.85) 0.045 (1.15) Features 0.035 (0.89) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol FMBT2907 FMBT2907A UNIT Collector-Base voltage CONDITIONS V CEO -40 -60 V Collector-Emitter voltage V CBO -60 V Emitter-Base voltage V EBO -5.0 V IC -600 mA T = 25 C Total device dissipation FR-5 board A (1) Derate above 25 OC PD 225 mW PD 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW Derate above 25 C PD 2.4 mW/ OC Junction to ambient R θJA 417 Collector current O Junction to ambient O Total device dissipation alumina substrate(2) Thermal resistance T A = 25 C O Operating temperature Storage temperature TJ -55 ~ +150 T STG -65 ~ +150 O O C/W C/W o 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 C Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS FMBT2907 FMBT2907A uA uA FMBT2907 FMBT2907A FMBT2907 FMBT2907A FMBT2907A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) ON CHARACTERISTICS FMBT2907 FMBT2907A FMBT2907 FMBT2907A FMBT2907 FMBT2907A FMBT2907 FMBT2907A FMBT2907 FMBT2907A http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) SMALL–SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A Switching time equivalent test circuits Fig 1. Saturated Turn-On Switching Time Fig 2.Saturated Turn-Off Switching Time Typical Electrical Characteristics FIG.4-Collect-Emitter Saturation Voltage vs Collect Current FIG.3-Typical Pulsed Current Gain vs Collect Current 0.5 Collector-Emitter Voltage, VCEBAT(V) Typical Pulse Current Gain, hfe 500 400 300 200 100 0 0.1 0.3 1.0 3.0 10 30 100 0.4 0.3 0.2 0.1 0 300 1 10 IC, Collector Current, (mA) 1.0 Base-Emitter On Voltage, VBEON(V) 1.0 Base-Emitter Voltage, VBEST(V) 500 FIG.6-Base-Emitter On Voltage vs Colltector Current FIG.5-Base-Emitter Saturation Voltage vs Collector Current 1.2 0.8 0.6 0.4 0.2 0 100 IC, Collector Current, (mA) 1 10 100 0.8 0.6 0.4 0.2 500 Collector Current, IC (mA) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 0 0.1 1 10 2.5 Collector Current, IC (mA) Document ID Page 5 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A FIG.7-Collect Cutoff Current vs Ambient Temperature FIG.8-Input & Output Capacitance vs Reverse Bias Voltage 20 16 10 Capacitance (pF) Collector Current, ICBO (nA) 100 1 0.1 12 8 4 0.01 25 50 75 100 0 -0.1 125 -1 Amient Temperature, TA (°C) -10 -50 Reverse Bias Voltage (V) Typical Characteristics(Continued) FIG.9-Switching Times vs Collector Current FIG.10-Turn On and Turn Off Times vs Collector Current 250 500 400 Time, (ns) Collect Current, ICBO (ns) 200 150 100 300 200 50 100 0 10 50 100 500 0 10 1000 50 Collector Current, IC (mA) 20 0.75 10 5 2 500 0.50 0.25 0 0 Collector Current, IC (mA) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 1000 FIG.12-Power Dissipation vs Ambient Temperature 1.00 Power Dissipation, PD(W) Turn-On Base Current, IB1 (mA) FIG. 11-Rise Time vs Collector & Turn On Base Current 100 500 Collector Current, IC (mA) 50 1 10 100 25 50 75 100 125 150 Temperature, TA (°C) Document ID Page 6 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBT2907 M2B FMBT2907A 2F Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9 Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 383*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 9 DS-231112 Issued Date 2008/02/10 Revised Date Revision Page. 2011/07/21 D 9