Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical characteristics................................................................... 3~4 Switching time equivalent test circuits................................................ 4,8 Rating and characteristic curves........................................................ 5~10 Pinning information........................................................................... 11 Marking........................................................................................... 11 Suggested solder pad layout............................................................. 11 Packing information.......................................................................... 12 Reel packing.................................................................................... 13 Suggested thermal profiles for soldering processes............................. 13 High reliability test capabilities.......................................................... 14 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW 200mA Silicon NPN+PNP Epitaxial Planar Transistor Package outline SOT-363 Features • High collector-emitterbreakdien voltage. (BV CEO ±40V Min.@I C=±1mA) .087(2.20) .070(1.80) • • • • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Offer NPN+PNP in one package Capable of 150mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen free part, ex. FMBT3946DW-H. .087(2.20) .079(2.00) • S mall load switch transistor with high gain and low .053(1.35) .045(1.15) .026(0.65)Typ. .010(0.25) .003(0.08) .012(0.30) .004(0.10) .004(0.10) Max. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-363 • Terminals : Solder plated, solderable per .043(1.10) .031(0.80) Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : See Diagram • Mounting Position : Any • Weight : Approximated 0.006 gram 3 2 Q1 4 1 Q2 5 6 Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current CONDITIONS NPN PNP NPN PNP NPN PNP NPN PNP Symbol MIN. TYP. MAX. UNIT 60 -40 40 -40 6.0 -5.0 V IC 200 -200 mA mW V CBO V CEO V EBO Total device dissipation (1) T A = 25 C PD 150 Thermal resistance Junction to ambient R θJA 833 O Operating junction temperature range Storage temperature range V V O C/W TJ -55 +150 o C T STG -55 +150 o C 1.Device mounted on FR-4 glass epoxy printed circuit board using the minimum recommended footprint http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Symbol MIN. Collector-Base breakdown voltage I c = 10μA, I E = 0 V (BR)CBO 60 V Collector-Emitter breakdown voltage(3) CONDITIONS (NPN) TYP. MAX. UNIT I c = 1mA, I B = 0 V (BR)CEO 40 V Emitter-Base breakdown voltage I c = 10μA, I C = 0 V (BR)EBO 6.0 V Base cutoff current V CE = 30Vdc, V EB = 3.0Vdc I BL 50 Collector cutoff current V CE = 30Vdc, V EB = 3.0Vdc I CEX 50 PARAMETER CONDITIONS (PNP) Symbol MIN. TYP. nA MAX. UNIT Collector-Base breakdown voltage I c = -10μA, I E = 0 V (BR)CBO -40 V Collector-Emitter breakdown voltage(3) I c = -1mA, I B = 0 V (BR)CEO -40 V Emitter-Base breakdown voltage I c = -10μA, I C = 0 V (BR)EBO -5.0 V Base cutoff current Collector cutoff current V CE = -30Vdc, V EB = -3.0Vdc I BL -50 V CE = -30Vdc, V EB = -3.0Vdc I CEX -50 nA On characteristics(2) PARAMETER DC current gain Collector-Emitter saturation voltage(2) CONDITIONS (NPN) Symbol MIN. I c = 0.1mA, V CE = 1.0V 40 I c = 1.0mA, V CE = 1.0V 70 I c = 10mA, V CE = 1.0V h FE 100 I c = 50mA, V CE = 1.0V 60 I c = 100mA, V CE = 1.0V 30 I c = 10mA, I B = 1.0mA TYP. 300 0.2 V CE(sat) I c = 10mA, I B = 1.0mA V BE(sat) 0.65 0.85 CONDITIONS (PNP) Symbol Collector-Emitter saturation voltage(2) I c = -10mA, V CE = -1.0V MIN. TYP. 100 60 I c = -100mA, V CE = -1.0V 30 300 -0.25 V CE(sat) I c = -10mA, I B = -1.0mA - Vdc -0.40 I c = -50mA, I B = -5.0mA Base-Emitter saturation voltage(2) MAX. UNIT 80 h FE I c = -50mA, V CE = -1.0V I c = -10mA, I B = -1.0mA Vdc 60 I c = -0.1mA, V CE = -1.0V I c = -1.0mA, V CE = -1.0V DC current gain Vdc 0.95 I c = 50mA, I B = 5.0mA PARAMETER - 0.3 I c = 50mA, I B = 5.0mA Base-Emitter saturation voltage(2) MAX. UNIT V BE(sat) -0.65 -0.85 Vdc -0.95 I c = -50mA, I B = -5.0mA 2.Pulse test : pukse width < 300uS, duty cycle < 2.0%. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW Electrical characteristics (AT T =25 C unless otherwise noted) o A Small-signal characteristics PARAMETER CONDITIONS (NPN) Current-gain-bandwidth product(3) I C = 10mA, V CE = 20V, f = 1.0MHz Symbol MIN. fT 300 TYP. MAX. UNIT MHz Output capacitance V CB = 5.0V, I E = 0, f = 1.0MHz C obo 4.0 pF Input capacitance V EB = 0.5V, I C = 0, f = 1.0MHz C ibo 8.0 pF Input impedance V CE = 10V, I C = 1.0mA, f = 1.0KHz h ie 1.0 10 kΩ Voltage feeback radio V CE = 10V, I C = 1.0mA, f = 1.0KHz h re 0.5 8.0 X 10 -4 Small-signal current gain V CE = 10V, I C = 1.0mA, f = 1.0KHz h fe 100 400 - Output admittance V CE = 10V, I C = 1.0mA, f = 1.0KHz h oe 1.0 40 Noise figure V CE = 5.0V, I C = 100uA, RS = 1.0K ohms, f = 1.0KHZ PARAMETER CONDITIONS (PNP) Current-gain-bandwidth product(3) I C = -10mA, V CE = -20V, f = 100MHz NF 5.0 Symbol MIN. fT 250 μmhos dB TYP. MAX. UNIT MHz C obo 4.5 pF V EB = -0.5V, I C = 0, f = 1.0MHz C ibo 10.0 pF Input impedance V CE = -10V, I C = -1.0mA, f = 1.0KHz h ie 2.0 12 Voltage feeback radio V CE = -10V, I C = -1.0mA, f = 1.0KHz h re 0.1 10.0 Small-signal current gain V CE = -10V, I C = -1.0mA, f = 1.0KHz h fe 100 400 Output admittance V CE = -10V, I C = -1.0mA, f = 1.0KHz h oe 3.0 60 Noise figure V CE = -5.0V, I C = -100uA, RS = 1.0K ohms, f = 1.0KHZ NF 4.0 Symbol MIN. Output capacitance V CB = -5.0V, I E = 0, f = 1.0MHz Input capacitance kΩ X 10 -4 μmhos dB 3.f T is defined as the frequency at which h fe extrapolates to unity. Switching characteristics PARAMETER Delay time CONDITIONS (NPN) V CC = 3.0V, V BE = -0.5V I C = 10mA, I B1 = 1.0mA Rise time Storage time Fall time V CC = 3.0V, I C =10mA I B1 = I B2 = 1.0mA PARAMETER Delay time Rise time Storage time Fall time TYP. td 35 tr 35 ts 200 Symbol ns 50 tf CONDITIONS (PNP) MAX. UNIT MIN. TYP. MAX. UNIT V CC = -3.0V, V BE = 0.5V I C = -10mA, I B1 = -1.0mA td 35 tr 35 V CC = -3.0V, I C =-10mA I B1 = I B2 = -1.0mA ts 225 tf 75 ns 4. Pulse Test: Pulse Width <=300μs, Duty cycle«=2.0% us http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS Rating and characteristic curves (NPN) TYPICAL TRANSIENT CHARACTERISTIC T J =25°C, -------- T J =125°C http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS Rating and characteristic curves (NPN) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE=-5.0Vdc, T A =25°C, Bandwidth=1.0Hz) IC=50 μ A IC=50 μ A IC=100 μ A S O U R C E RESISTANCE=500 IC=100 μ A hoe OUTPUT ADMITTANCE ( μ mhos) h PARAMETER (V CE =10Vdc, T A =25°C, f=1.0kHz) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS Rating and characteristic curves (NPN) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS Switching time equivalent test circuits (PNP) us Rating and characteristic curves (PNP) TYPICAL TRANSIENT CHARACTERISTIC T J =25°C, -------- T J =125°C http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS Rating and characteristic curves (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE=-5.0Vdc, T A =25°C, Bandwidth=1.0Hz) uA uA uA hoe OUTPUT ADMITTANCE ( μ mhos) uA http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 9 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS θv TEMPERATURE COEFFICIENTS (mV/°C) Rating and characteristic curves (PNP) TYPICAL STATIC CHARACTERISTICS http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 10 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW Pinning information Pin Simplified outline 3 PIN 1. EMITTER 2 PIN 2. BASE 2 PIN 3. COLLECTOR 1 PIN 4. EMITTER 1 PIN 5. BASE 1 PIN 6. COLLECTOR 2 2 Symbol 1 3 2 1 • Q1 4 5 4 6 Q2 5 *Q1 PNP Q2 NPN 6 Marking Type number Marking code FMBT3946DW 46 Suggested solder pad layout SOT-363 0.025(0.65) 0.025(0.65) 0.051(1.3) 0.075(1.9) 0.098(2.5) 0.024(0.60) 0.0165(0.42) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 11 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW Packing information P0 d T P1 E F W B C P A D2 D1 W1 D unit:mm Item Symbol Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.36 2.40 1.20 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 12 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW Reel packing PACKAGE SOT-363 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 13 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14 Dual NPN +PNP SMD Transistor Formosa MS FMBT3946DW High reliability test capabilities Item Test Conditions 1. Steady State Operating Life TA=25°C P D=150mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj = 150℃, V CE= 80 % related volage , Test Duration: 1000hrs 3. Temperature Cycle 4. Autoclave - 55℃( 15min ) to 150℃( 15min ) Air to Air Transition Time < 20sec Test Cycles : 1000cycle P = 2atm Ta = 121℃ RH = 100 % Test Duration : 96hrs 5. High Temperature Storage Life Ta = 150℃ Test Duration : 1000hrs 6. Solderability 245℃, Test Duration : 5sec 7. High Temperature High Humidity Reverse Bias Ta = 85℃, 85 % RH , V CE= 80 % related volage , Test Duration : 1000hrs 8. Resistance to Soldering Heat 260℃, Test Duration : 10sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 14 Document ID Issued Date Revised Date DS-231156 2010/01/10 2010/06/10 Revision B Page. 14