2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Value Unit Collector-Emitter Voltage VCBO -40 Vdc Collector-Base Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -1.0 A(DC) ICP -2.0 A (Pulse)* PC 0.5 W T j , Tstg 150, -55 to +150 %C Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 100ms DEVICE MARKING 2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0) V(BR)CBO -40 - Vdc Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0) V(BR)CEO -32 - Vdc Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -20Vdc, IE=0) ICBO - -0.5 uAdc Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0) IEBO - -0.5 uAdc WEITRON http://www.weitron.com.tw 2SB1132 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -3 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -50mAdc) hFE 82 - 390 - VCE(sat) - - -0.5 Vdc fT - 150 - MHz Cob - 20 30 Transition Frequency (IC= -50mAdc, VCE=-5 Vdc, f=30MHz) Collector Output Capacitance (IE= 0, VCB=-10 Vdc, f=1MHz) CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 WEITRON http://www.weitron.com.tw PF 2SB1132 FIG.1 FIG.3 FIG.5 WEITRON http://www.weitron.com.tw FIG.2 FIG.4 FIG.6 2SB1132 FIG.7 FIG.9 WEITRON http://www.weitron.com.tw FIG.8 FIG.10 2SB1132 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON http://www.weitron.com.tw D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900