WEITRON KTA1664

KTA1664
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Collector Power Dissipation
PD
0.5
W
Junction Temperature
Tj
-55 to +150
˚C
Tstg
-55 to +150
˚C
Rating
Storage Temperature Range
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted)
Parameter
Unit
40
-
-
V
BVCEO
32
-
-
V
BVEBO
5
-
-
V
ICBO
-
-
0.5
µA
IEBO
-
-
0.5
µA
BVCBO
Collector-Emitter Breakdown Voltage
IC=1mA, I B=0
Emitter-Base Breakdown Voltage
IE=50µA, I C =0
Collector Cutoff Current
VCB=20V, I E=0
Collector Cutoff Current
VEB =4V, I C=0
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Max
Min
Collector-Base Breakdown Voltage
IC=50µA, I E=0
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Typ
Symbol
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11-Dec-08
KTA1664
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
82
-
390
-
VCE(sat)
-
-
0.4
V
fT
-
150
-
MHz
Cob
-
15
-
pF
ON CHARACTERISTICS
DC Current Gain
VCE=3V, I C =100mA
Collector-Emitter Saturation Voltage
IC=0.5A, I B=50mA
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=5V, I C =50mA f=100MHz
Output Capacitance
VCB=10V, I E=0, f=1MHz
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
DAP
DAQ
DAR
Marking
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11-Dec-08
KTA1664
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
E
G
A
H
C
J
B
K
A
B
C
D
E
G
H
J
K
L
D
L
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Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500 TYP
2.900
3.100
11-Dec-08