C945LT1 - Weitron

C945LT1
NPN Transistors
P b Lead(Pb)-Free
3
1
2
C945LT1=CR
WEITRON
http://www.weitron.com.tw
C945LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Min
Typ
Max
hFE
130
-
400
-
VCE(sat)
-
-
0.3
Vdc
VBEF
-
-
1.4
V
fT
150
-
-
MHz
Symbol
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=1 mAdc, VCE=6.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=100 mAdc, IB=10mAdc)
Base-Emitter Voltage
(I E =310mA)
Transition Frequence
(IC=-10mAdc, VCE=6 Vdc,f=30 MHZ)
CLASSIFICATION OF hFE
Rank
L
H
Range
130-200
200-400
WEITRON
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C945LT1
FIG1. Total Power Dissipation
vs Ambient Temperature
FIG.3 Collector Current vs Collector
to Emitter Voltage
FIG.4 Gain Bandwidth Product vs
Emitter Current
FIG.6 Collector and Bade Saturation Voltage
vs Collector Current
WEITRON
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FIG2. Collector Current vs Collector
to Emitter Voltage
FIG.5 DC Current Gain vs
Collector Current
FIG.7 DC Current Gain vs
Collector Current
C945LT1
SOT-23 Package Outline Dimensions
Unit:mm
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
A
B
T OP V IE W
E
G
C
D
H
K
J
WEITRON
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L
M