AVICTEK AV945LT1

@vic
AV945
SOT—23
AV945LT1
1. BASE
TRANSISTOR( NPN )
2. EMITTER
3. COLLECTOR
Parameter
Symbol
0.95
0.4
0.95
1.9
2.4
1.3
2.9
Power dissipation
PCM :
0.2
W(Tamb=25℃)
Collector current
ICM :
0.15 A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150
ELECTRICAL CHARACTERISTICS(Tamb=25℃
otherwise specified)
1.0
FEATURES
Unit : mm
unless
Test
Collector-base breakdown voltage
V(BR)CBO
Ic= 1mA,
Collector-emitter breakdown voltage
V(BR)CEO
Collector-emitter breakdown voltage
V(BR)EBO
conditions
MIN
TYP
MAX
UNIT
60
V
Ic= 0.1mA, IB=0
50
V
Ic= 100μA, IB=0
5
V
IE=0
Collector cut-off current
ICBO
VCB=60 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=45 V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V ,
0.1
μA
hFE(1)
VCE= 6V, IC= 1mA
hFE(2)
VCE= 6V, IC= 0.1mA
IC=0
130
400
DC current gain
40
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 10m A
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 10m A
1
V
1.4
V
Base-emitter voltage
VBEF
Transition frequency
fT
CLASSIFICATION OF h FE(1)
Rank Range IE= 310m A
VCE=6V,
f=30MHz
150
MHz
L H 130-200 200-400 MARKING Copyright @vic Electronics Corp.
IC= 10mA
CR 1
Website http://www.avictek.com
@vic
AV945
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
θ
b
L
E
E1
L1
0.2
e
C
Symbol
A
A1
A2
e1
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.900
1.100
0.035
0.043
A1
0.000
0.100
0.000
0.004
A2
0.900
1.000
0.035
0.039
b
0.300
0.500
0.012
0.020
c
0.080
0.150
0.003
0.006
D
2.800
3.000
0.110
0.118
E
1.200
1.400
0.047
0.055
E1
2.250
2.550
0.089
e
e1
1.800
L
0.100
0.037TPY
0.950TPY
2.000
0.071
0.550REF
0.079
0.022REF
L1
0.300
0.500
0.012
0.020
θ
0°
8°
0°
8°
Copyright @vic Electronics Corp.
2
Website http://www.avictek.com