® MURF2020CTR thru MURF2060CTR

MURF2020CTR thru MURF2060CTR
®
Pb
MURF2020CTR thru MURF2060CTR
Pb Free Plating Product
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes
ITO-220AB
Unit : inch (mm)
.189(4.8)
.165(4.2)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
Mechanical Data
Case: Insulated/Isolated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.543(13.8)
.512(13.0)
Application
.1
.1
(2.55)
(2.55)
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CTR"
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Doubler
Tandem Polarity
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MURF2020CT
MURF2040CT
MURF2060CT
SYMBOL MURF2020CTR MURF2040CTR MURF2060CTR UNIT
MURF2020CTD MURF2040CTD MURF2060CTD
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
20.0
IF(AV)
o
Current TC=125 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
200
VF
0.98
A
175
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.7
1.3
V
10.0
uA
250
uA
35
nS
70
120
-55 to +150
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MURF2020CTR thru MURF2060CTR
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
20
16
10
8
6
4
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
MURF2020CTR
125
100
75
MURF2040CTR-MURF2060CTR
50
25
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
MURF2020CTR
MURF2040CTR
10
0.1
MURF2060CTR
TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/