SKM 200GB063D
7 4* 8) %
!
Absolute Maximum Ratings
Symbol Conditions
IGBT
()'
9 7 4* 8)
)
9 7 3*+ 8)
)=>
Superfast NPT-IGBT
Modules
SKM 200GB063D
;++
(
4;+
1
7 <+ 8)
4++
1
@++
1
A 4+
(
3+
E
7 4* 8)
4++
1
7 F+ 8)
3-*
1
@++
1
3@++
1
*++
1
@+ &&& G 3*+
8)
@+ &&& G 34*
8)
4*++
(
)=>74?)
()) 7 -++ (B (' C 4+ (B
()' D ;++ (
Units
7 4* 8)
('
SEMITRANS® 3
Values
9 7 34* 8)
Inverse Diode
.
9 7 3*+ 8)
.=>
.=>74?.
.>
7 3+ B &
9 7 3*+ 8)
Module
=>
09
Features
!
!
" #$ %
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& &
%%& % ()'
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$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ Typical Applications*
! !
1) 0
0 !0
5 #
6
! 0
(
1) 3 &
7 4* 8) %
!
Characteristics
Symbol Conditions
IGBT
('
(' 7 ()' ) 7 @ 1
)'
(' 7 + ( ()' 7 ()'
()'+
)'
()'
)
)
(' 7 3* (
min.
typ.
max.
Units
@*
**
;*
(
9 7 4* 8)
+3
+-
1
9 7 4* 8)
3+*
(
9 7 34* 8)
3
(
9 7 4*8)
*-
H
9 7 34*8)
<
) 7 4++ 1 (' 7 3* ( 9 7 4*8)
0&
()' 7 4* (' 7 + (
4*
(
9 7 34*8)
0&
4@
4F
(
% 7 3 >"I
334
34*
.
.
+<*
.
@F+
)
)
J
(' 7 +( G3*(
=
9 7 8)
!
'
!%%
%
= 7 F H
=%% 7 F H
'%%
=9
H
43
()) 7 -++(
)7 4++1
9 7 34* 8)
(' 7 A3*(
+
K
3@+
<+
33
@@4
@*
L
<*
L
+3@
MN6
GB
1
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Characteristics
Symbol Conditions
Inverse Diode
(. 7 (')
SEMITRANS® 3
Superfast NPT-IGBT
Modules
. 7 4++ 1B (' 7 + (
min.
typ.
max.
Units
9 7 4* 8)
0&
3**
3O
(
9 7 34* 8)
0&
3**
(.+
9 7 34* 8)
.
9 7 34* 8)
@
9 7 34* 8)
<*
34<
==>
J
. 7 4++ 1
'
(' 7 3* (B ()) 7 ;++ (
=92
!!
(
+O
(
**
H
1
E)
L
+-
MN6
Module
)'
=))PG''P
3*
& SKM 200GB063D
=
!
>
Q >;
>
>;
4+
"
7 4* 8)
+-*
H
7 34* 8)
+*
H
++-F
MN6
-
*
4*
*
-4*
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
*+ , %% -+ , (
$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
! !
1) 0
0 !0
5 #
6
! 0
GB
2
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
=
=
=
=
73
74
77@
73
74
7-
O+
-O
O
4
++@3;
++3-O
+++43
QN6
QN6
QN6
QN6
7@
++++3
=
=
=
=
73
74
77@
73
74
7-
4++
F@
3@
4
++4<*
++@3+++3O
QN6
QN6
QN6
QN6
7@
+++@
Zth(j-c)D
Superfast NPT-IGBT
Modules
SKM 200GB063D
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
*+ , %% -+ , (
$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ Typical Applications*
! !
1) 0
0 !0
5 #
6
! 0
GB
3
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
UL recognized
File no. E 63 532
)
2 *;
6
)
2 *;
03-12-2008 SEI
© by SEMIKRON