Power Management ICs for Automotive Body Control
Regulator with Voltage Detector
and Watchdog Timer
BD3010AFV-M
No.10039EAT09
●Description
BD3010AFV-M is a regulator IC with integrated WDT (Watch Dog Timer), high output voltage accuracy ±2.0% and 80µA
(Typ.) low circuit current consumption. BD3010AFV-M supports usage of low ESR ceramic capacitor for output stability.
Also integrated is an automatic WDT ON/OFF feature using output current detection and an output clamping circuit to
prevent output overshoot caused by current flow. The reset detection voltage can be adjusted by connecting resistors on the
RADJ terminal. BD3010AFV-M can be a stable power supply for any applications while detecting malfunction of
microcontrollers.
●Features
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
Vcc Max Voltage・・・50V
High Output Voltage Accuracy・・・±2.0%(Ta=-40 ~ 125℃)
Low Circuit Current ・・・80µA (Typ.)
Output Circuit・・・Pch DMOS
Supports Low ESR Ceramic Capacitor
Integrated Over Current Protection and Thermal Shut Down
Integrated WDT Reset Circuit (Adjustable Detection Voltage through RADJ pin)
Integrated Automatic WDT ON/OFF Function through Output Current Detection
WDT Can be Switched ON/OFF by Using INH Pin
Integrated Output Voltage Clamping Circuit
Package・・・SSOP-B20
●Applications
Any application using a microcontroller or a DSP such as automotive (body control), display, server, DVD, phone, etc
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1/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Vcc
-0.3 ~ +50
V
VADJ set pin voltage
VADJ
-0.3 ~ +7
V
Regulator output pin voltage
VOUT
-0.3 ~ +7
V
INH pin voltage
VINH
-0.3 ~ +15
V
Reset output pin voltage
VRo
-0.3 ~ +7
V
VCLK
-0.3 ~ +15
V
VCT
-0.3 ~ +7
V
VWADJ
-0.3 ~ +7
V
Pd
1.25
W
Operating temperature range
Topr
-40 ~ +125
℃
Storage temperature range
Tstg
-55 ~ +150
℃
Tjmax
150
℃
*1
Supply voltage
Watchdog input pin voltage
Watchdog time set pin voltage
Watchdog operation current set pin voltage
*2
Power dissipation
Maximum junction temperature
*1
*2
Not to exceed Pd.
Reduced by 10.0mW/℃ over Ta=25℃, when mounted on 70mm×70mm×1.6mm glass epoxy board:
●Operating Conditions(Ta=-40 ~ +125℃)
Parameter
Symbol
Min.
Max.
Unit
Supply Voltage
*3
Vcc
5.6
36.0
V
Supply Voltage
*4
Vcc
6.0
36.0
V
Io
0
200
mA
Output current
*3
For the output voltage, consider the voltage drop (dropout voltage) due to the output current.
*4
Operating condition for automatic WDT ON/OFF.
NOTE: This product is not designed for protection against radioactive rays.
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2/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Electrical characteristics(Unless otherwise specified, Ta=-40 ~ +125℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Circuit current 1
Icc1
－
80
140
µA
Circuit current 2
Icc2
－
110
170
µA
Output voltage
OUT
4.90
5.00
5.10
V
Line regulation
Line.Reg
－
5
30
mV
Vcc=5.6 ~ 36V
Load regulation
Load.Reg
－
20
60
mV
Io=5 ~ 150mA
Dropout voltage
ΔVd
－
0.25
0.50
V
Vcc=4.75V, Io=150mA
Ripple rejection
R.R.
45
55
－
dB
f=120Hz, ein=1Vrms, Io=100mA
ΔI
0.002
0.010
0.025
－
Io=50mA(output)
Vclp
5.2
5.5
5.8
V
Io=20mA(input)
Detection voltage
Vdet
4.12
4.25
4.38
V
RADJ=Open
Hysteresis width
VHS
35
70
150
mV
Output delay time L→H
(Power On Reset)
TdLH
1.8
2.3
2.8
ms
Low output voltage
VRST
－
0.1
0.4
V
Min. operating voltage
VOPL
1.5
－
－
V
Upper switching threshold voltage
VthH
1.08
1.15
1.25
V
WDT ON, INH=Open
Lower switching threshold voltage
VthL
0.13
0.15
0.17
V
WDT ON, INH=Open
WDT charge current
Ictc
3.5
5.0
6.5
µA
WDT ON, INH=Open, CT=0V
WDT discharge current
Ictd
0.8
1.3
1.7
µA
WDT ON, INH=Open, CT=1.3V
WDT watch time
TWH
6.4
8.0
9.6
ms
WDT ON, INH=Open,
CT=0.01µF(Ceramic Cap)
WDT reset time
TWL
1.6
2.0
2.4
ms
※Characteristics of ceramic cap not considered.
[Entire Device]
Io=50mA(Ta=25℃)
[Regulator]
WADJ mirror current ratio
Output voltage clamp (Comparator)
[Reset]
OUT=Vdet±0.5V, CT=0.01µF
OUT=4.0V
[Watchdog Timer]
WDT operating current
IOA
0.3
1.7
4.0
mA
WDT ON, INH open,
5kΩ resistor is placedbetween
WADJ and OUT pins.
※Characteristics of external resistor not considered.
[INH]
WDT OFF threshold voltage
VHINH
OUT
×0.8
－
OUT
V
V
Pulled down inside the IC when
INH=open
INH=5V
VLINH
0
－
OUT
×0.3
IINH
－
15
30
µA
CLK OFF threshold voltage
VLCLK
0
－
OUT
×0.3
V
CLK ON threshold voltage
VHCLK
OUT
×0.8
－
OUT
V
CLK input pulse width
TWCLK
500
－
－
ns
WDT ON threshold voltage
INH input current
[CLK]
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3/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Reference Data
(Unless otherwise specified, Ta=25℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA)
0.5
150
Ta=125℃
120
90
60
Ta=25℃
Ta=-40℃
30
0.4
0.3
Ta=25℃
0.2
0.1
0
5
10
15
20
25
30
35
0
3
Ta=-40℃
2
Ta=25℃
1
Ta=125℃
50
100
150
0
200
5
10
15
20
25
30
OUTPUT CURRENT: Io[mA]
SUPPLY VOLTAGE: Vcc [V]
Fig.1 Circuit Current 1
Fig.2 Circuit Current 2
Fig.3 Input Stability
3
Ta=125℃
Ta=-40℃
2
1
RIPPLE REJECTION: R.R. [dB]
Ta=25℃
4
DROPOUT VOLTAGE: ΔVd [V]
5
0.5
0.4
Ta=125℃
0.3
Ta=25℃
0.2
0.1
Ta=-40℃
200
300
400
500
600
Ta=125℃
60
Ta=25℃
40
Ta=-40℃
20
0
0
100
35
80
0.6
0
0
700
50
100
150
200
Fig.5 I/O Voltage Difference
(Vcc=4.75V)
Fig.4 Load Stability
10
100
1000
10000 100000 1E+06
FREQUENCY : f [Hz]
OUTPUT CURRENT: Io[mA]
OUTPUT CURRENT: Io [mA]
Fig.6 Ripple Rejection
6
OUTPUT VOLTAGE: OUT [V]
5.10
OUTPUT VOLTAGE: OUT [V]
4
SUPPLY VOLTAGE: Vcc [V]
6
0
5
0
0
0
OUTPUT VOLTAGE: OUT[V]
6
OUTPUT VOLTAGE: OUT [V]
CIRCUIT CURRENT: Icc2 [mA]
CIRCUIT CURRENT: Icc1 [uA]
180
5.05
5.00
4.95
4.90
5
4
3
150℃
170℃
2
1
0
-40
0
40
80
120
100
120
140
160
180
200
AMBIENT TEMPERATURE: Ta [℃]
AMBIENT TEMPERATURE: Ta [℃]
Fig.7 Output Voltage vs.
Temperature
Fig.8 Thermal Shutdown
Circuit Characteristics
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4/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Reference Data
(Unless otherwise specified, Ta=25℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA)
5
4.5
3
2
Ta=125℃
1
Ta=25℃
Ta=-40℃
0
0
1
2
3
4
1.0
0.0
Ta=125℃
-1.0
Ta=-40℃
-2.0
Ta=25℃
-3.0
-4.0
-5.0
5
0
0.3
OUTPUT VOLTAGE: OUT [V]
1.2
1.5
9
0.8
8
0.7
IRESET[mA]
5
4
Reset time
3
Ta=-40℃
0.3
5.5
5.4
-40 -20
0
20
40
60
80 100 120
AMBIENT TEMPERATURE: Ta [℃]
Fig.15 SAT detection
vs. Temperature
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Ta=-40℃
0
0.2
0.4
0.6
0.8
1
1.2
0
1.4
2
4
VINH[V]
Fig. 14 VINH_IINH
20
1.8
DET OUTPUT CURRENT: IOA [%]
5.6
8
Fig. 13 VRESET_IRESET
(OUT=1.5V,Ro=0.5V)
DET OUTPUT CURRENT : IOA [mA]
5.7
Ta=125℃
10
2
2.0
5.8
12
VRESET[V]
6.0
120
Ta=25℃
4
0
Fig.12 WDT Time vs. Temperature
(CT=0. 01µF)
(Vcc=5V)
80
6
AMBIENT TEMPERATURE: Ta [℃]
5.9
40
14
Ta=25℃
0.4
120
0
16
0
80
4
-40
18
Ta=125℃
0.5
0
40
Vdet
4.1
20
0.1
1
0
4.2
Fig.11 Reset Detection
Voltage vs. Temperature
0.2
2
-40
VHS
AMBIENT TEMPERATURE: Ta [℃]
0.6
Watch time
6
4.3
Fig.10 CT Pin Charge / Discharge
Current (Vcc=5V)
7
WDT : TWL,H [ms]
0.9
4.4
CT PIN VOLTAGE: VCT [V]
Fig.9 Voltage detection
(RADJ=Open)
SAT DETECTION: [V]
0.6
IINH[uA]
RESET OUTPUT: Ro [V]
4
RESET DET VOLTAGE : Vdet [V]
CT PIN CURRENT: Ictc,Ictd [uA]
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
15
10
5
0
-5
-10
Ta=25℃
-15
-20
-40 -20
0
20
40
60
80 100 120
AMBIENT TEMPERATURE: Ta [℃]
Fig.16 WDT Current Detection
vs. Temperature
(WADJ-OUT = 5kΩ)
5/21
6
16
26
36
Vcc[V]
Fig.17 WDT Current Detection vs. Vcc
(WADJ-OUT = 5kΩ)
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Measurement Circuit for Electrical Data
A
Vcc
OUT
Vcc
OUT
Vcc
N.C
OUT
N.C
OUT
N.C
OUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
CLK
INH
WADJ
CLK
WADJ
CLK
WADJ
INH
RADJ
INH
RADJ
RADJ
Ro
CT
Io
V
Ro
CT
CT
Measurement Circuit of Fig.3
and Fig.7 and Fig.8
Measurement Circuit of Fig.1 and Fig.2
OUT
A
V
Ro
Measurement Circuit of Fig.4
V
Vcc
OUT
Vcc
OUT
Vcc
N.C
OUT
N.C
OUT
N.C
OUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
CLK
WADJ
CLK
WADJ
INH
RADJ
INH
RADJ
CT
Ro
~
Io
Measurement Circuit of Fig.5
A
V
~
Ro
CT
V
~
100ｍA
Measurement Circuit of Fig.6
OUT
GND
GND
CLK
WADJ
INH
RADJ
CT
Ro
Measurement Circuit of Fig.9 and Fig.11
Vcc
OUT
Vcc
OUT
Vcc
N.C
OUT
N.C
OUT
N.C
OUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
ND
GND
CLK
WADJ
CLK
WADJ
CLK
WADJ
INH
RADJ
INH
RADJ
INH
RADJ
CT
Ro
Ro
CT
Oscilloscope
V
CT
OUT
GND
GND
Ro
A
0.01μF
Measurement Circuit of Fig.10
A
Measurement Circuit of Fig.12
Measurement Circuit of Fig.13
OUT
Vcc
OUT
Vcc
OUT
Vcc
N.C
OUT
N.C
OUT
N.C
OUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
CLK
WADJ
CLK
WADJ
CLK
WADJ
INH
RADJ
INH
RADJ
INH
RADJ
CT
Ro
Measurement Circuit of Fig.14
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Ro
CT
Oscilloscope
Measurement Circuit of Fig.15
6/21
CT
Ro
Oscilloscope
Measurement Circuit of Fig.16 and Fig.17
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Block Diagram
OUT
Vcc
OCP
N.C.
PREREG
OUT
VREF
TSD
Forced Monitor
GND
GND
Stand-by
GND
GND
GND
GND
GND
Vcc
GND
VCLP
GND
GND
Edge
OUT
WADJ
CLK
VREF_R
RADJ
ON/OFF
Circuit
INH
VREF_R
CT
Ro
WDT
VthH
VthL
Fig.18
Pin No. Pin Name
1
Function
Vcc
Pin No. Pin Name
Power supply Pin
11
Ro
Function
Reset output pin
2
N.C.
12
RADJ
Reset detection voltage set pin
3
GND
13
WADJ
WDT operating current set pin
4
GND
14
GND
5
GND
15
GND
6
GND
16
GND
7
GND
17
GND
8
CLK
Clock input from microcontroller
18
GND
9
INH
19
OUT
10
CT
WDT ON/OFF function pin
External capacitance for reset output
delay time, WDT monitor time setting
connection pin
20
OUT
－
GND
GND
Voltage output pin
●Top View (Package dimension)
SSOP-B20
20
11
1
10
0.3Min.
4.4 ± 0.2
6.4 ± 0.3
6.5 ± 0.2
0.1± 0.1
1.15 ± 0.1
0.15 ± 0.1
0.1
0.65
0.22 ± 0.1
(Unit : mm)
SSOP-B20
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7/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●I/O Equivalent Circuits (Resistance value is Typ. value)
<Regulator>
Vcc
OUT
Vcc
Vcc
OUT
IC
3750
kΩ
673
kΩ
1250
kΩ
200
kΩ
CLK
WADJ
OUT
OUT
External R
for detection
140kΩ
WADJ
330kΩ
CLK
10kΩ
<Reset>
Ro
INH
OUT
OUT
470kΩ
Ro
INH
1kΩ
10k Ω
300kΩ
RADJ
OUT
CT
OUT
OUT
OUT
OUT
OUT
VREF
815
kΩ
RADJ
CT
1kΩ
100Ω
1kΩ
330
kΩ
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1kΩ
10pF
8/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Detection Voltage Adjustment (Resistance Value is TYP. value)
OUT
R4
OUT
OUT
R2=815kΩ
470kΩ
+
－
100Ω
R3
R1=330kΩ
～
～
RADJ
Ro
1kΩ
RADJ≒1.23V
IC Internal Block Diagram
When typical detection voltage is 4.25V
Vdet ≒ RADJ × (R1+R2) / R1
・Vdet
: Reset detection voltage
・RADJ
: Internal reference voltage (MOS input)
・R1,R2 : IC internal resistor (Voltage detection precision is tightened up to ±3% by laser-trimming the R1 and R2)
RADJ will fluctuate 1.23V±6.0%
Insert pull down resistor R3 (lower resistance than R1) in between RADJ-GND, and pull down resistor R4 (lower resistance
than R2) in between RADJ-OUT to adjust the detection voltage.
By doing so, the detection voltage can be adjusted by the calculation below.
Vdet=RADJ×[{R2×R4/(R2+R4)}+{R1×R3/(R1+R3)}]/{R1×R3/(R1+R3)}
When the output resistance value is as small enough to ignore the IC internal resistance, you can find the detection voltage
by the calculation below.
Vdet ≒ RADJ × (R3+R4) / R3
Adjust the resistance value by application as the circuit current will increase due to the added resistor.
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9/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●WDT Voltage Detection (Resistance Value is TYP. value)
PowTr
－
+
OUT
WADJ-R
(External R)
140kΩ
WDT can be automatically switched ON/OFF by the output load
current. To detect the output load current, add a resistor between
OUT-WADJ. Current detection is adjustable by selecting
1 kΩ ~ 15kΩ resistance.
WADJ
LOW
－
+
WDT
ON
Calculation:
1
Io(Desired load current value) x ΔI(WADJ current mirror ratio)x(external R/140kΩ※ )
※2
≧100mV
HIGH
WDT
OFF
IC Internal Block Diagram
※1 is IC internal resistance between WADJ-OUT
(tolerance approx ±30%, temperature coefficient approx 2000ppm)
※2 is an offset of detection comparator (tolerance approx 100mV±10%)
When there is no resistance between WADJ-OUT, Io=70µA can
be detected by the calculation below
Io(Desired load current value) x ΔI (WADJ current mirror ratio) x 140kΩ≧100mV
※If the OUT-WADJ resistance value is not same as the condition on the electrical characteristics table, i.e., 5KΩ, choose
the resistance value in ratio referring to the above equation.
＜Timing Chart＞
Timing Chart from the no load condition (Stand-by Mode)
13.5V
Vcc
0V
OUT
5V
0V
INH
0V
1.25V
1.15V
CT
CT pull up voltage
Vth H
Vth L
0.15V
0V
5V
CLK
0V
Ro
OUT
0V
IoA
Io
Stand-by mode
5mA
0mA
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10/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Power ON Reset
Power ON reset (output delay time) is adjustable by CT pin capacitor.
TdLH(S) ≒(1.15V×CT capacitance(µF) / Ictc(µA)(TYP.)
・TdLH
: Output delay time( power ON reset)
・1.15V
: Upper switching threshold voltage(TYP.)
・CT capacitance : Capacitor connected to CT pin
・Ictc
: WDT charge current
＜Calculation example＞with 0.01µF CT pin capacitor
TdLH(S) = 1.15V×0.01µF / 5.0µA
≒ 2.3msec
※If the CT capacitance is not the same as the condition on the electrical characteristics table, i.e., 0.01µF, choose the
capacitance value in ratio referring to the above equation.
＜Timing Chart＞
※Watchdog Timer OFF(INH ON)
13.5V
Vcc
4.0V
3V
0V
4.32V
OUT
5V
4.0V
4.25V VHS 70mV
0V
5V
4.0V
INH
0V
1.25V
CT pull up voltage
CT
0V
CLK
0V
OUT Voltage
Power on reset
Reset on
Ro
0V
Reset on
Power on
reset
Io
Reset on
0mA
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11/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Watchdog Timer
Watch Dog Timer ( WDT watch time, reset time) is adjustable by the CT pin capacitor
TWH(S) ≒(1.00V×CT capacitance (µF))/Ictd(µA)
(Typ.)
TWL(S) ≒(1.00V×CT capacitance (µF))/Ictc(µA)
(Typ.)
・TWH
: WDT watch time (delay time to turn the reset ON)
・TWL
: WDT reset time (time the reset is ON)
・1.00V
: Upper switching threshold voltage - lower switching threshold voltage
・CT capacitance
: CT pin capacitor ※Shared with power ON reset
・Ictc
: WDT charge current
・Ictd
: WDT discharge current
※WDT time’s accuracy is ±20% by trimming
＜Calculation example＞with 0.01µF CT pin capacitor
TWH(S) ≒ 1.00V×0.01µF/1.3µA ≒ 8.0msec
TWL(S) ≒ 1.00V×0.01µF/5.0µA ≒ 2.0msec
(Typ.)
(Typ.)
※If the CT capacitance is not the same as the condition on the electrical characteristics table, choose the capacitance
value in ratio referring to the above equation.
＜Timing Chart＞
Vcc
13.5V
0V
OUT
5V
0V
WDT OFF(INH=ON)
5V
INH
0V
Watch time
CT
1.25V
1.15V
0.15V
0V
CLK
CLK＜500nsec
5V
0V
Out Voltage
Ro
0V
Io
IoA
5mA
Stand-by
mode
Reset time
0mA
Watch dog on
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12/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●WDT timer ON/OFF switch INH (Resistance value is Typ. value)
BD3010AFV-M has a switch INH to turn the WDT ON/OFF
VREF_R(TYP≒1.25V)
LOW
INH
10kΩ
HIGH
300kΩ
～
～
WDT
ON
ON/OFF
Current
CT
WDT
OFF
External
Capacitor
IC Internal Block Diagram
By using INH ON, CT potential can be pulled up to internal voltage VREF_R (invalid with power ON reset)
＜Timing Chart＞
13.5V
Vcc
0V
OUT
5V
0V
INH
5V
0V
CT
1.25V
1.15V
CT pull up voltage
Vth H
Vth L
0.15V
0V
CLK
5V
0V
Ro
Out Voltage
0V
Io
IoA
5mA
0mA
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13/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Forced Watch Mode
By detecting an input voltage (battery voltage) called output SAT detection, WDT can be forced to be operated.
Vcc
8750kΩ
2500kΩ
WDT will be forced ON from reset cancellation voltage to
Vcc≒5.7V (WDT can be turned OFF by INH)
LOW＆RESET cancel
WDT forced ON
+
－
HIGH&RESET cancel
VREF
Stand-by mode
64kΩ
IC Internal Block Diagram
＜Timing Chart including Forced Watch Mode＞
※No CLK signal Input
Forced watch mode
Forced watch mode
Vcc
6V
5V
3V
5.7V
Stand-by
mode
4.32V
OUT
4.25V
VHS 70mV
0V
INH
0V
Power on reset
1.25V
CT
1.15V
0.15V
Reset time
watch time
0V
CLK
0V
Ro
0V
Reset “L”
Reset “L”
Io
0V
Forced watch mode
Vcc
6V
Forced watch mode
5V
Stand-by mode
3V
5.7V
0V
4.32V
OUT
4.25V
VHS 70mV
0V
INH
CT
0V
1.25V
1.15V
0.15V
Power on reset
Reset time Watch time
0V
CLK
0V
OUT Voltage
Ro
Io
0V
Reset “L”
Reset “L”
0V
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14/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
＜Timing Chart including Forced Watch Mode＞
Forced watch mode
Vcc
※With CLK signal Input
5.7V
5V
3V
6V
Forced watch
Stand-by
mode
4.32V
OUT
4.25V
VHS 70mV
0V
INH
0V
1.25V
CT
1.15V
0.15V
0V
CLK
0V
Ro
Io
Power on reset
OUT
0V
0V
Forced watch mode
Vcc
Reset “L”
Reset “L”
5.7V
Forced watch mode
6V
5V
3V
Stand-by
mode
4.32V
OUT
4.25V
VHS 70mV
0V
INH
0V
CT
1.25V
1.15V
0.15V
0V
CLK
0V
Ro
Io
Power on reset
OUT Voltage
0V
Reset “L”
Reset “L”
0V
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15/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
＜Entire Timing Chart＞
Forced watch mode
Forced watch mode
Forced watch mode
13.5V
Vcc
5.5V
5V
3V
4.0V
0V
4.32V
OUT
5V
4.25V
0V
4.0V
VHS 70mV
WDT OFF(INH=ON)
INH
5V
0V
Watch time
CT
1.25V
1.15V
0.15V
0V
CLK
0V
Power on reset
OUT Voltage
Ro
0V
Power on reset
Reset time
Minimum
reset
Movement
voltage
Stand-by mode
IoA
Io
Reset on
Reset on
Reset on
Watch dog ON
5mA
0mA
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16/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Thermal Dissipation Curve
3.0
ROHM standard board
Board size:70mm×70mm×1.6mm
3.0
④2.60W
Power Dissipation : Pd [W]
Power Dissipation : Pd [W]
θja=100(℃/W)
2.0
①1.25W
1.0
0.0
①θja=100.0℃/W
②θja=78.1℃/W
③θja=59.5℃/W
④θja=48.1℃/W
③2.10W
2.0
②1.60W
①1.25W
1.0
0.0
0
25
50
75
100
125
150
ROHM standard board
ROHM standard board
Board size:70mm×70mm×1.6mm
④3.03W
3.0
①1-layer board
②2-layer board(back surface copper foil area:15mm×15mm
③2-layer board(back surface copper foil area:70mm×70mm
④4-layer board(back surface copper foil area:70mm×70mm
Power Dissipation : Pd [W]
ROHM standard board
Board size:70mm×70mm×1.6mm
PKG GND short to board thermal via
①1-layer board
②2-layer board(back surface copper foil area:15mm×15mm
③2-layer board(back surface copper foil area:70mm×70mm
④4-layer board(back surface copper foil area:70mm×70mm
③2.13W
①θja=89.4℃/W
②θja=75.4℃/W
③θja=58.6℃/W
④θja=41.3℃/W
2.0
②1.66W
①1.40W
1.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
Ambient Temperature: Ta [℃]
Ambient Temperature: Ta [℃]
Ambient Temperature: Ta [℃]
Fig.19
Fig.20
(Reference Data)
Fig.21
(Reference Data)
※Reduced by 10.0mW/℃ over Ta=25℃, when mounted on
125
150
70mm×70mm×1.6mm glass epoxy board
Refer to Fig.19 ~ 21 thermal dissipation characteristics for usage above Ta=25℃. The IC’s characteristics are affected
heavily by the temperature, and if is exceeds its max junction temperature (Tjmax), the chip may degrade or destruct.
Thermal design is critical in terms of avoiding Instantaneous destruction and reliability in long term usage. The IC needs to
be operated below its max junction temperature (Tjmax) to avoid thermal destruction. Refer to Fig. 19 ~ 21 for SSOP-B20
package thermal dissipation characteristics. Operate the IC within power dissipation (Pd) when using this IC.
Power consumption Pc(W) calculation will be as below (for Fig.21④)
Vcc
OUT
Io
Icc2
Pc=(Vcc－OUT)×Io+Vcc×Icc2
Power dissipation Pd≧Pc
: Input Voltage
: Output Voltage
: Load Current
: Circuit Current
If load current Io is calculated to operate within power dissipation, it will be as below, where you can find the max load
current IoMax for the applied voltage Vcc of the thermal design.
Io ≦
Pd－Vcc×Icc2
(Refer to Fig2 for Icc2)
Vcc－OUT
Example) at Ta=85℃, Vcc=12V, OUT=5V
Io ≦
1.578－12×Icc2
Fig.21④:θja=41.3℃/W→-24.2mW/℃
12－5
25℃=3.03W→85℃=1.578W
Io ≦ 200mA (Icc2=110µA)
Refer to above and adjust the thermal design so it will be within power dissipation within the entire operation temperature
range. Below is the power consumption Pc calculation when (OUT-GND short)
Pc=Vcc×(Icc2+Ishort)
(Ishort: short current)
(Refer to Fig.4 for I short)
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17/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Pin Settings / Precautions
1.
Vcc pin
Insert a 0.33 ~ 1000µF capacitor between the Vcc and GND pins. The appropriate capacitance value varies by
application. Be sure to allow a sufficient margin for input voltage levels.
2.
Output pins
It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output. Usable
capacitance values range from 0.1µF ~ 1000µF. Abrupt fluctuations in input voltage and load conditions may affect the
output voltage. Output capacitance values should be determined only through sufficient testing of the actual
application.
Vcc=5.6V～36V
Ta=-40℃～+125℃
Cin=0.33µF～100µF Cout=0.1µF～100µF
Vcc
100
Cout_ESR(Ω)
出力コンデンサESR(Ω）
10
1
Stable operating
region
Vcc
(5.6V～36V)
0.1
Cin
(0.33µF
～100µF)
0.01
0.001
0
50
100
150
OUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
CLK
WADJ
INH
RADJ
CT
200
OUT
N.C
Cout
(0.1µF～100µF)
Io(ROUT)
ESR
(0.001Ω～)
Ro
Io(mA)
出力負荷Io(mA)
Cout_ESR vs Io(reference data)
3.
※ Pin Settings / Precautions 2 Measurement circuit
CT pin
Connecting a capacitance of 0.01µF ~ 1µF on the CT pin is recommended.
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18/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Notes for use
1. Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may
result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open
mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device,
consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC.
2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external
circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics.
3. GND potential
The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins
are at a voltage below the GND at any time, regardless of transient characteristics.
4. Ground wiring pattern
When using both small-signal and large-current GND traces, the two ground traces should be routed separately but
connected to a single ground potential within the application in order to avoid variations in the small-signal ground
caused by large currents. Also ensure that the GND traces of external components do not cause variations on GND
voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance.
5. Inter-pin shorts and mounting errors
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result
in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by
poor soldering or foreign objects) may result in damage to the IC.
6. Operation in strong electromagnetic fields
Using this product in strong electromagnetic fields may cause IC malfunction. Caution should be exercised in
applications where strong electromagnetic fields may be present.
7. Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance pin may subject the IC
to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be
turned off completely before connecting or removing it from a jig or fixture during the evaluation process. To prevent
damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.
8. Thermal consideration
Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions.
Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc)
Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] ,
θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W],
Pc : Power dissipation [W], Vcc : Input Voltage, OUT : Output Voltage, Io : Load, Icc2 : Bias Current 2
Package Power dissipation
: Pd (W)=(Tjmax－Ta)/θja
Power dissipation
: Pc (W)=(Vcc－OUT)×Io+Vcc×Icc2
9. Output voltage clamp
To prevent rises in the output voltage in response to current surges through the load, the IC incorporates an output voltage
clamp circuit. This circuit helps prevent damage to the microcontroller due to output voltage overshoot. However, this
circuit is only effective for circuit paths with instantaneous peak currents and therefore does not support DC operation.
10. For an infinitesimal fluctuations of output voltage.
At the use of the application that infinitesimal fluctuations of output voltage caused by some factors (e.g. disturbance
noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g.
insert the filter, etc.).
11. Over current protection circuit (OCP)
The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output
capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit
output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous or transitive operation of the
protection circuits.
12. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of
thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used
after this function has activated, or in applications where the operation of this circuit is assumed.
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19/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
13. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal
state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in
case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent
reverse current flow, or insert bypass diodes between Vcc and each pin.
Back current prevention diode
Bypass diode
Vcc
OUT
GND
Output Capacitor
14. Positive voltage surges on VCC pin
A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 50V
on the VCC pin.
Vcc
GND
15. Negative voltage surges on VCC pin
A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on
the VCC pin.
Vcc
GND
16. Output protection diode
Loads with large inductance components may cause reverse current flow during startup or shutdown.
In such cases, a protection diode should be inserted on the output to protect the IC.
17. Regarding input pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating
parasitic diodes and/or transistors. For example (refer to the figure below):
○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode
○When GND > Pin B, the PN junction operates as a parasitic transistor
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate,
such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.
(Pin B)
Transistor (NPN)
Resistor
B
(Pin B)
(Pin A)
B
E
C
C
E
GND
N
P
P+
P+
P+
P
P+
N
N
N
P
N
N
P substrate
Parasitic elements
GND
N
Parasitic elements
or transistors
(Pin A)
Parasitic elements
GND
Example of Simple Monolithic IC Architecture
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20/21
2010.11- Rev.A
Technical Note
BD3010AFV-M
●Ordering part number
B
D
3
Part No.
0
1
0
A
F
Part No.
V
-
M
Package
FV: SSOP-B20
E
2
Packaging and forming specification
E2: Embossed tape and reel
SSOP-B20
<Tape and Reel information>
6.5 ± 0.2
11
0.3Min.
4.4 ± 0.2
6.4 ± 0.3
20
1
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
10
0.1± 0.1
1.15 ± 0.1
0.15 ± 0.1
0.1
0.65
0.22 ± 0.1
1pin
Reel
(Unit : mm)
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21/21
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2010.11- Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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R1010A