V23990-P760-A60-PM target datasheet flow PIM 2 1200 V / 100 A Features flow 2 housing ● 3~rectifier,BRC,Inverter, NTC ● Very Compact housing, easy to route ● IGBT4/ EmCon4 technology for low saturation losses and improved EMC behavior Target Applications Schematic ● Motor Drives ● Power Generation Types ● V23990-P760-A60-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 92 A 890 A 3960 A2s 128 W Tjmax 150 °C VCE 1200 V 97 A tp limited by Tjmax 200 A VCE ≤ 1200V, Tj ≤ Top max 200 A 220 W ±20 V Tj≤150°C 10 µs VGE=15V 850 V 175 °C Input Rectifier Diode Repetitive peak reverse voltage VRRM DC forward current IFAV Tj=Tjmax Surge forward current IFSM 50 Hz Th=80°C Tj=150°C I2t-value I2t tp=10ms, sin 180° Power dissipation Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Inverter Transistor Collector-emitter break down voltage DC collector current Pulsed collector current IC ICpulse Turn off safe operating area Power dissipation Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature copyright Vincotech Tj=Tjmax Tj=Tjmax Tjmax 1 Th=80°C Th=80°C 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 86 A 200 A 167 W Tjmax 175 °C VCE 1200 V 54 A tp limited by Tjmax 100 A VCE ≤ 1200V, Tj ≤ Top max 100 A 155 W ±20 V 10 850 µs V Tjmax 175 °C VRRM 1200 V 16 A 20 A 69 W Tjmax 175 °C VRRM 1200 V 28 A 100 A 86 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Th=80°C Brake Transistor Collector-emitter break down voltage DC collector current Pulsed collector current IC ICpuls Turn off safe operating area Power dissipation Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Tj=Tjmax Th=80°C Th=80°C Tj≤150°C VGE=15V Brake Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Brake Inverse Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Th=80°C Brake Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Surge non-repetitive forward current IFSM tp=10ms, sin 180° Power dissipation Ptot Tj=Tjmax Maximum Junction Temperature copyright Vincotech Tjmax 2 Th=80°C Th=80°C 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage Comparative tracking index copyright Vincotech Vis t=2s DC voltage CTI >200 3 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Unit Typ Max 1,17 1,15 0,86 0,72 5,08 7,12 1,5 Input Rectifier Diode Forward voltage VF 60 Threshold voltage (for power loss calc. only) Vto 60 Slope resistance (for power loss calc. only) rt 60 Reverse current Ir Thermal resistance chip to heatsink 1500 RthJH Phase-Change Material ʎ=3,4W/mK VGE(th) VCE=VGE Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V mΩ 0,1 0,55 mA K/W Inverter Transistor Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode VCE(sat) IGES Integrated Gate resistor Rgint Turn-on delay time Rise time Turn-off delay time Fall time 0,01 100 0 1200 20 0 tr td(off) tf Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate RthJH Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 5,4 6 6,6 1,79 1,12 2,15 0,3 1000 Rgoff=6,5 Ω Rgon=6,5 Ω 600 ±15 100 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd V V mA nA Ω none td(on) Turn-on energy loss per pulse Thermal resistance chip to heatsink 15 ICES Gate-emitter leakage current 10 300 200 600 ns 300 mWs 10000 f=1MHz 0 10 Tj=25°C 2000 pF 160 ±15 600 100 Tj=25°C Phase-Change Material ʎ=3,4W/mK 210 nC 0,43 K/W Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink copyright Vincotech 100 Rgoff=6,5 Ω ±15 600 di(rec)max /dt Erec RthJH Phase-Change Material ʎ=3,4W/mK 100 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 2,50 2,00 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd 0,57 4 3,3 V A ns µC A/µs mWs K/W 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Value Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] 10 0,005 Unit Tj Min Typ Max Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 5,4 6 6,6 1,79 2,12 2,15 Brake Transistor Gate emitter threshold voltage VGE(th) VCE=VGE Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time 50 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink RthJH 500 none tr td(off) 0,15 Rgoff=13 Ω Rgon=13 Ω ±15 600 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd V V mA nA Ω 300 200 600 ns 300 mWs 5000 f=1MHz 0 25 ±15 600 Tj=25°C 1000 pF 80 50 Tj=25°C Phase-Change Material ʎ=3,4W/mK 105 nC 0,61 K/W Brake Inverse Diode Diode forward voltage Thermal resistance chip to heatsink VF RthJH 10 Tj=25°C Tj=150°C 1,1 Phase-Change Material ʎ=3,4W/mK 1,80 1,76 2,1 1,38 V K/W Brake Diode Diode forward voltage Reverse leakage current Peak reverse recovery current VF Ir trr Reverse recovered charge Qrr Reverse recovery energy Thermal resistance chip to heatsink 1200 IRRM Reverse recovery time Peak rate of fall of recovery current 25 Rgoff=13 Ω ±15 600 di(rec)max /dt Erec RthJH 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 2,24 2,36 2,74 60 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd Phase-Change Material ʎ=3,4W/mK V µA A ns µC A/µs mWs 1,10 K/W 21511 Ω Thermistor Rated resistance R Deviation of R100 ∆R/R Power dissipation P Tj=25°C R100=1486 Ω Tj=25°C Power dissipation constant -4,5 +4,5 % Tj=25°C 210 mW Tj=25°C 3,5 mW/K B-value B(25/50) Tj=25°C 3884 K B-value B(25/100) Tj=25°C 3964 K Vincotech NTC Reference copyright Vincotech Tj=25°C 5 F 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Output Inverter Output inverter IGBT Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) 400 IC (A) IC (A) 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0 At tp = Tj = VGE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = VGE from 250 µs 25 °C 7 V to 17 V in steps of 1 V 1 2 3 4 V CE (V) 5 250 µs 150 °C 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 3 Typical transfer characteristics IC = f(VGE) IC (A) 100 80 60 40 20 Tj = 25°C Tj = Tjmax-25°C 0 0 At tp = VCE = 2 250 10 copyright Vincotech 4 6 8 10 V GE (V) 12 µs V 6 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Output Inverter Output inverter IGBT Figure 4 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 0 0 Zth-JH (K/W) 10 ZthJH (K/W) 10 Output inverter FWD Figure 5 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) 10-1 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -2 10 10-5 10-4 At D= RthJH = 10-3 10-2 10-1 100 t p (s) 10110 10 -5 10 At D= RthJH = tp / T 0,43 -2 K/W -4 10 -3 R (K/W) 0,039 0,056 0,111 0,155 0,041 0,017 R (K/W) 0,038 0,080 0,164 0,214 0,048 0,029 Output inverter IGBT -1 10 0 t p (s) 1 10 10 Tau (s) 4,7E+00 8,4E-01 1,4E-01 3,8E-02 9,7E-03 9,2E-04 Output inverter IGBT Figure 7 Collector current as a function of heatsink temperature IC = f(Th) 175 IC (A) Ptot (W) 500 10 K/W FWD thermal model values Phase change interface Figure 6 Power dissipation as a function of heatsink temperature Ptot = f(Th) -2 tp / T 0,57 IGBT thermal model values Phase change interface Tau (s) 4,6E+00 9,9E-01 1,8E-01 5,0E-02 1,3E-02 1,6E-03 10 150 400 125 300 100 75 200 50 100 25 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 0 200 At Tj = VGE = °C 7 50 175 15 100 150 T h ( o C) 200 °C V 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Output Inverter Output inverter IGBT Figure 8 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 9 Gate voltage vs Gate charge VGE = f(QGE) IC (A) VGE (V) 103 20 18 10uS 16 102 14 100uS 12 10 10 1 1mS 8 10mS 6 100mS 100 DC 4 2 0 10-1 100 10 At D= Th = VGE = 1 103 102 0 V CE (V) At IC = VCC= TJ = single pulse 80 ºC 15 V Tjmax ºC Tj = 50 100 103 100 600 25 150 200 250 Q g (nC) 300 A V °C IGBT Figure 12 Reverse bias safe operating area IC = f(VCE) IC (A) 250 IC MAX Ic CHIP 200 MAX VCE Ic MODULE 150 100 50 0 0 200 400 600 800 1000 1200 1400 V CE (V) At Tj = Tjmax-25 Uccminus=Uccplus ºC Switching mode : 3 level switching copyright Vincotech 8 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Brake Brake IGBT Figure 1 Typical output characteristics IC = f(VCE) Brake IGBT Figure 2 Typical output characteristics IC = f(VCE) 175 IC (A) IC (A) 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0 At tp = Tj = VGE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = VGE from 250 µs 25 °C 7 V to 17 V in steps of 1 V Brake IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 3 4 5 250 µs 125 °C 7 V to 17 V in steps of 1 V Brake FWD Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 100 IF (A) IC (A) 50 V CE (V) 40 80 30 60 20 40 10 20 Tj = Tjmax-25°C Tj = Tjmax-25°C Tj = 25°C Tj = 25°C 0 0 0 At tp = VCE = 2 250 10 copyright Vincotech 4 6 8 10 V GE (V) 12 0 At tp = µs V 9 1 250 2 3 4 V F (V) 5 µs 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Brake Brake IGBT Figure 5 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) Brake FWD Figure 6 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) 101 ZthJH (K/W) ZthJH (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10 -5 10 -4 10 -3 D= At Phase change interface RthJH = 0,61 K/W 10 -2 10 -1 10 0 t p (s) 1 10-5 10 10 tp / T 10-4 10-3 D= At Phase change interface RthJH = 1,10 K/W Brake IGBT Figure 7 Power dissipation as a function of heatsink temperature Ptot = f(Th) 10-2 10-1 100 101 10 tp / T Brake IGBT Figure 8 Collector current as a function of heatsink temperature IC = f(Th) 100 IC (A) Ptot (W) 250 t p (s) 200 80 150 60 100 40 50 20 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 0 200 0 At Tj = VGE = ºC 10 50 175 15 100 150 T h ( o C) 200 ºC V 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Brake Brake FWD Figure 9 Power dissipation as a function of heatsink temperature Ptot = f(Th) Brake FWD Figure 10 Forward current as a function of heatsink temperature IF = f(Th) 60 IF (A) Ptot (W) 175 150 50 125 40 100 30 75 20 50 10 25 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 Th ( o C) 200 0 At Tj = ºC 11 50 175 100 150 Th ( o C) 200 ºC 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Brake Inverse Diode Brake inverse diode Figure 1 Typical diode forward current as a function of forward voltage IF = f(VF) Brake inverse diode Figure 2 Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 101 IF (A) ZthJC (K/W) 40 30 100 20 10 -1 10 -2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 Tj = Tjmax-25°C Tj = 25°C 0 0 1 At tp = 2 3 V F (V) 4 10-5 10-3 D= At Phase change interface RthJH = 1,38 K/W µs 250 10-4 Brake inverse diode Figure 3 Power dissipation as a function of heatsink temperature Ptot = f(Th) 10-2 100 t p (s) 10110 tp / T Brake inverse diode Figure 4 Forward current as a function of heatsink temperature IF = f(Th) 40 Ptot (W) IF (A) 140 10-1 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 0 At Tj = 50 25 copyright Vincotech 100 150 T h ( o C) 0 200 At Tj = ºC 12 50 25 100 150 T h ( o C) 200 ºC 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Input Rectifier Bridge Rectifier diode Figure 1 Typical diode forward current as a function of forward voltage IF= f(VF) Rectifier diode Figure 2 Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 250 1 IF (A) ZthJC (K/W) 10 200 100 150 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 50 Tj = 25°C Tj = Tjmax-25°C 0 0 0,5 1 1,5 2 2,5 V F (V) 10-2 3 10 At tp = 10 At D= RthJH = µs 250 -5 Rectifier diode Figure 3 Power dissipation as a function of heatsink temperature Ptot = f(Th) -4 10 -3 10 -2 10 10 0 t p (s) 1 10 10 tp / T 0,56 K/W Rectifier diode Figure 4 Forward current as a function of heatsink temperature IF = f(Th) 300 -1 Ptot (W) IF (A) 175 150 250 125 200 100 150 75 100 50 50 25 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T h ( o C) 150 0 At Tj = ºC 13 30 150 60 90 120 T h ( o C) 150 ºC 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Thermistor Thermistor Figure 1 Typical NTC characteristic as a function of temperature RT = f(T) NTC-typical temperature characteristic R (Ω) 24000 20000 16000 12000 8000 4000 0 25 copyright Vincotech 50 75 100 T (°C) 125 14 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste 17mm housing Ordering Code V23990-P760-A60-PM in DataMatrix as P760-A60 in packaging barcode as P760-A60 Outline Pinout copyright Vincotech 15 19 Dec 2014 / Revision 2 V23990-P760-A60-PM target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 16 19 Dec 2014 / Revision 2