AN55 - Silicon Labs

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S I 3 2 2 0 / S I 3225 U SER G UIDE
1. Introduction
The Si3220/Si3225 is a highly-programmable linecard
SLIC/codec solution comprised of the Si3220 or Si3225
dual-channel SLIC/codec IC and the Si3200
single-channel linefeed interface chip. Its operation has
been optimized to reduce the amount of controller
interaction during normal call processing. This
document describes the connections, signals, and
control required to operate the Si3220/Si3225. The
instructions in this document must be followed exactly
to achieve a fully-operational solution. Note every
aspect of the described design process. Use this
document with the Si3220/Si3225 data sheet,
Si3220/Si3225 Evaluation Board data sheet, and
demonstration source code as references for any
Si3220/Si3225 design.
2. Si3220/Si3225 Layout
Considerations
With appropriate layout design, the Si3220/Si3225
circuit will exhibit high-quality low-noise performance.
Pins 1, 3, 4, 8, 9, 13, 14, 16–20, and 61–64 are
sensitive current input pins that are susceptible to
induced noise. Traces between these pins and their
respective components (R1–5, R7, R8, R11–15, R17,
R18) should be kept to a length of less than 0.25 inch.
The connections between pins 6, 7, 10, 11 and their
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respective components (C5, C6, C15, C16) are of
secondary concern. C5, C6, C15, and C16 should be
placed immediately beyond the aforementioned
resistors with the QGND traces wrapping to pin 8 from
the outside. Under no circumstance should any digital
traces be routed near these Si3220/Si3225 sensitive
traces. The compensation capacitors, C3, C4, C13, and
C14, should be placed near the respective TIP and
RING outputs of the Si3200. A 0.1 F ceramic
decoupling capacitor should be placed within 0.2 inch of
every VDD and VBAT power supply input pin. These
capacitors are C20–25 and C30–33. Refer to the
evaluation board data sheet for an illustration and
example of this layout. (See Figure 1 for component
placement.)
The Si3220/Si3225 and Si3200 packages utilize an
exposed pad to dissipate thermal energy. To achieve
the thermal rating of the Si3200 package, as stated in
the data sheet, the exposed pads must be soldered to
multiple ground planes. A top side, bottom side, and
one inner ground plane should be used with multiple
vias connecting them together. Twenty five vias should
be used in a 5x5 grid under the Si3220/Si3225. A line of
eight vias should be placed in a row under the Si3200.
The size of the vias used for the Si3200/Si3225 and
Si3200 thermal pads should be at least 10 mils. (See
Figures 1, 2, and 3.)
Copyright © 2006 by Silicon Laboratories
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Figure 1. Top Layer (Component Side)
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Figure 2. Ground Layer (Inner Layer)
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Figure 3. Bottom Layer (Solder Side)
3. Si3220/Si3225 Power Supply
Requirements
The Si3220/Si3225 is a low-power CMOS device that
can be powered by a 3.3 V or 5 V supply. All VDD pins
of the Si3220/Si3225 must be connected to a common
source with low impedance between each pin for
optimal low-noise operation. The Si3220/Si3225 ground
pins should be connected to a common ground plane. A
ceramic bypass capacitor of 0.1 F at 6 V minimum
should be used between every VDD pin and ground.
For power supply noise requirements, refer to the
Si3220/Si3225 data sheet specifications for power
supply rejection ratio (PSRR).
The Si3220/Si3225 solution requires telephony
operational voltages. A negative “battery” voltage
typically powers the telephone line. The Si3220/Si3225
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regulates the TIP and RING voltage to achieve
appropriate, programmed dc parameters for a given
telephone
line
condition
(ILIM,
VOC).
The
Si3220/Si3225 can perform this from multiple battery
sources. On the Si3220 internal ringing application, a
high battery voltage (VBATH) is selected large enough
to provide sufficient ringing signal. On the Si3225
external ringing application, VBATH is selected for
normal on-hook operation where TIP and RING voltage
are expected to be within a range of 42 V to 48 V. The
VBAT pin of the Si3200 is the negative power supply
input for the TIP and RING amplifiers. The VBAT pin is
always monitored to ensure proper on-hook voltage
(VOC). The on-hook voltage will be reduced from the
programmed value to retain sufficient overhead voltage
in the case that the on-hook battery (VBATH) has
decreased in value. VBATH is also used for off-hook
lines that require more potential than the short loop
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off-hook battery (VBATL) can provide. VBATL is used to
reduce power dissipation when off-hook into a short
loop length. VBATL should be selected to allow
operation into the longest short loop while not causing
excessive power dissipation in the case of zero loop.
VBATL is automatically used when the loop dc
conditions are such that VBATL can provide enough
operating overhead voltage. This automatic function is
described in the data sheet (Registers BATxTH,
BSWLPF, BATLPF).
For applications that require only one battery, the
battery source should be connected to both the VBAT
and VBATH pins on the Si3200.
All VBAT supplies should be low-impedance sources
with bulk capacitive elements. Ceramic bypass
capacitors of 0.1 F at an appropriate voltage should be
applied to the VBATH and VBAT pins per channel.
There is no restriction of power-up sequence for any
VBAT rail. A dv/dt limit must be observed when applying
the VBATH rail. Refer to “Absolute Maximum Ratings” in
the data sheet for this dv/dt limit, which can be achieved
with an RC network. This dv/dt limitation is usually only
an issue in “hot insertion” applications.
4. Si3220/Si3225 Clock
Requirements
The Si3220/Si3225 programmable function is powered
by an internal DSP. This DSP is clocked by a PLL that is
locked to external clock sources. These clock sources
are the PCM bus clock (PCLK) and frame sync
(FSYNC). PCLK is the master clock for the PLL and is
locked to by setting an internal counter based on PCLK
counts relative to FSYNC. This lock operation begins
immediately after the reset pin (RESET) is brought high.
Therefore, the RESET pin should be held low during
power up and only released when the PCLK and
FSYNC source are known to be stable. The PLL will
take approximately 5 ms to achieve lock after reset is
released with stable PCLK and FSYNC. Refer to the
data sheet for PCM bus timing requirements.
PCLK and FSYNC status is detected and reported by
the Si3220/Si3225 after RESET is released. The PLL
status should be verified by reading the MSTRSTAT
register before initialization of the Si3220/Si3225.
Before PLL lock or during a clock-failure condition, only
a limited set of registers can be accessed (see the
Si3220/Si3225 data sheet).
5. Connecting Digital Buses
The Si3220/Si3225 utilizes a serial peripheral interface
(SPI) bus hardware connection. Communicating to
multiple instantiations of the Si3220/Si3225 is achieved
by connecting a controller’s synchronous serial
interface bus to the first Si3220/Si3225. Remaining
devices should be connected to this bus in tandem with
the exception of the SDITHRU pin of the first
Si3220/Si3225 connecting to the SDI of the next
Si3220/Si3225 and so on for up to 16 channels (one
chip select for eight devices). A software channel select
scheme is then used to communicate to any single
channel or combination of channels. The first
Si3220/Si3225 in the chain establishes itself as channel
0 and 1 for its two channels of SLIC function. The
channel addressing is achieved with a control byte
preceding the address/data bytes of a given command.
Refer to the data sheet and “AN58: Si3220/Si3225
Programmer’s Guide” for information on communicating
to the SPI port.
The PCM bus should also be connected in tandem with
all devices. The DTX signal for all devices should be
pulled down to ground with a single 470 k resistor.
Remember to route digital signals away from sensitive
analog traces mentioned earlier.
6. Si3220/Si3225 Registers and RAM
The Si3220/Si3225 8-bit register space automatically
loads default values following a reset. These registers
can be modified for desired functional effect. Refer to
the listing in AN58 for the default values and suggested
alternate values. Refer to the data sheet for calculation
of alternate values.
The 16-bit RAM locations of the Si3220/Si3225 will
initialize to 0x0000 following a reset. The RAM must be
initialized with functional values to prepare the
Si3220/Si3225 for operation. Refer to the RAM listing in
AN58 for example RAM location values. Refer to the
data sheet or ProSLIC LINC software for calculation of
alternate values. Refer to AN58 for communicating to
RAM locations.
7. Si3220/Si3225 Operation
The power supply rails applied to the Si3220/Si3225
can be brought up in any sequence. VDD power should
be applied with the Si3220/Si3225 reset pin (RESET)
held low. The state of any Si3220/Si3225 pin is
indeterminate upon power up with no reset. The PCM
clock (PCLK) and PCM frame sync (FSYNC) signals
must be present and stable before the RESET pin is
released to the high state. PLL lock will occur after
release of RESET and should be verified in the
MSTRSTAT register before continuing.
7.1. Initialization and Calibration
Certain commands must be issued to the Dual ProSLIC
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to prepare it for operation. A complete initialization and
calibration sequence is described in “AN58:
Si3220/Si3225 Programmer’s Guide”. The device ID
should be read as reference for proper revision-specific
operation. Appropriate initial values are then written to
all 16-bit RAM locations. Alternate functional values can
be written to 8-bit registers if desired. Interrupts are to
be cleared and enabled. Finally, the calibration
sequence should be followed to prepare the Dual
ProSLIC for optimal operation.
Calibration of the Dual ProSLIC provides optimal SLIC
function,
measurement
accuracy,
and
audio
performance. Calibrations should be performed only
during an on-hook condition. Refer to AN58 for the
complete initialization and calibration method.
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DOCUMENT CHANGE LIST
Revision 0.3 to Revision 0.4
Added information on proper PCB heat slug design
for the Si322x and Si3200.
 Added information on dv/dt limit for VBAT.

Removed initialization and calibration information
referencing “AN58: Si3200/Si3225 Programmer’s
Guide” where detailed initialization and calibration
procedures can be found.
 Added Figures 1, 2, 3.

Rev. 0.4
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