BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD241E VCER BD241D BD241E Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V 120 VCEO BD241F Emitter-base voltage 180 200 BD241F Collector-emitter voltage (IB = 0) UNIT 160 BD241D Collector-emitter voltage (RBE = 100 Ω) VALUE 140 V 160 VEBO 5 V IC 3 A ICM 5 A IB 1 A Ptot 40 W Ptot 2 W ½LIC2 32 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD241D 120 BD241E 140 BD241F 160 TYP MAX UNIT V VCE = 160 V VBE = 0 BD241D 0.2 VCE = 180 V VBE = 0 BD241E 0.2 VCE = 200 V VBE = 0 BD241F 0.2 VCE = 90 V IB = 0 0.3 mA VEB = 5V IC = 0 1 mA Forward current VCE = 4V IC = 1A transfer ratio VCE = 4V IC = 3A IB = 750 mA IC = 3A (see Notes 5 and 6) 2.5 V VCE = IC = 3A (see Notes 5 and 6) 1.8 V Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 4V (see Notes 5 and 6) mA 25 5 VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 3.125 °C/W 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -3.7 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 0·1 1·0 10 TCS631AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·0 0·1 IC = IC = IC = IC = 100 mA 300 mA 1A 3A 0·01 0·1 IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 10 IC - Collector Current - A Figure 3. SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AH tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 0·01 1·0 BD241D BD241E BD241F 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AA Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5