ICL8002G ICL8002G Design for ZC6 COB for ZC6 COB

ICL8002G Design
for ZC6 COB
IFKOR PMM SMD
Infineon
Albert Kim
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Schematic
C9
530uH 74:26:4
2
R8
8
1
D3
4
5
HV VCC 7
BD1
C2
AC
Z1
C5
ICL8002G
F1
D2
Q5
DRV 4
R14
R11
7
R13
D4
R15
R12
ZCV 1
R9
VR 2
Q3
6 NC
CS 3
L1
GND
8
C6
C8
C7
R10R14B
Copyright ⓒ Seoul Semiconductor Co., Ltd.
C10
R10
<3>
R14A
ZD3
R7
ZD2
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BOM
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Reference
U1
LED
F1
Z1
Q3
Q5
C2
C5
C6
C7
C8
C9
C10
D2,D4
D3
16
T1
17
18
19
20
21
22
23
24
25
26
27
28
L1
BD1
ZD2
ZD3
R2
R15
R7
R8
R9
R10A
R10B
R11
Value
ICL8002G
2.5A 250V
560V
45V 0.1A
600V 2.4A
630V 153
630V 104
25V 22uF
50V 56pF
50V 10nF
50V 330uF
50V 4.7uF
150V 250mA
1KV 1A
1.5mH 0.19A
600V 0.5A
11V
4.7V
4K7
121K
3.48K
1.6M
91K
24K
1.5K
0R
Copyright ⓒ Seoul Semiconductor Co., Ltd.
Description
IC
COB
Fuse
VARISTOR
PNP Transistor
MOSFET
Film Cap
Film Cap
MLCC, X7R
MLCC, COG
MLCC, X7R
Electrolytic Cap, L0=10000H
MLCC, X7R
Switching Diode
Ultrafast Rectifier Diode
Coupled inductor : 730uH
Np:Nvcc:Ncorr = 74 : 26 :4
Filter Choke
Bridge Diode
Zener Diode, 500mW
Zener Diode, 500mW
Metal Film Resistor 5%
Metal Film Resistor 1%
Metal Film Resistor 1%
Metal Film Resistor 1%
Metal Film Resistor 1%
Metal Film Resistor 1%
Metal Film Resistor 1%
Metal Film Resistor 5%
<4>
package
SO8
7mm Disc
SOT23
DPAK
1210
0603
0603
10*20
1206
SOD80C
SMA
TO-269A
SOD123
SOD123
0603
0603
0603
0805
0603
0603
0603
0603
Part Number
ICL8002G
Manufacturer
Infineon
2.5A 250V
7D561
BC857B
IPD65R380E6
15nF 630V
0.1 uF 630V
GRM32ER71E226KE15L
GRM1885C1H560JA01D
GRM188R71H103KA01D
50ZLH330MT810X20
GRM31CR71H475KA12L
BAV102
US1M
BUSSMAN
7447462152
MB6S-E3/80
MMSZ5241B-V-GS08
MMSZ4688-V-GS08
Wurth Elektronik
VISHAY
VISHAY
VISHAY
Infineon
Infineon
MURATA
MURATA
MURATA
RUBYCON
MURATA
VISHAY
www.seoulsemicon.com
BOM
Number
29
30
31
32
33
Reference
R12
R13
R14
R14A
R14B
Value
20K
10R
33K
2R
2R
Copyright ⓒ Seoul Semiconductor Co., Ltd.
Description
Metal Film Resistor 1%
Metal Film Resistor 5%
Metal Film Resistor 5%
Metal Film Resistor 1%
Metal Film Resistor 1%
<5>
package
0603
0603
0603
0805
0805
Part Number
Manufacturer
www.seoulsemicon.com
Transformer specification
STRUCTURE
CORE : EE1616
Inductance : 730uH
Correction
Auxiliary
Primary
Primary
2
Start Finish Turns
2
4
74
Auxiliary
7
1
26
Correction
1
8
4
8
1
4
7
Copyright ⓒ Seoul Semiconductor Co., Ltd.
<6>
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Waveform
•
•
•
•
•
•
•
Input voltage : 220 [Vac]
Input watt : 6.94 [W]
Output voltage : 34.37 [V]
Output current : 181 [mA]
PF : 0.96
Efficiency: 89.6%
LED :
Vbus
Vout
Iout
 Start up waveform
Drain
Vout
Zoom in
Iout
 Output waveform
 Drain waveform
Copyright ⓒ Seoul Semiconductor Co., Ltd.
<7>
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Electrical specification
Inout voltage [V]
Input watt [W]
PF
Output voltage [V]
180
190
200
210
220
230
240
250
260
264
6.85
6.87
6.88
6.91
6.94
6.98
7.02
7.06
7.12
7.13
0.97
0.97
0.97
0.96
0.96
0.96
0.95
0.94
0.94
0.94
34.42
34.41
34.38
34.38
34.37
34.36
34.36
34.34
34.35
34.35
8
1
0.95
7.5
Output current
[mA]
181
182
181
181
181
181
181
181
182
182
Efficiency [%]
90.9
91.2
90.4
90.1
89.6
89.1
88.6
88.0
87.8
87.7
190
36
185
35.5
6.5
0.8
0.75
6
Input watt
5
200
175
34.5
170
34
Output current
0.6
190
35
165
0.65
180
180
0.7
PF
5.5
210
220
230
240
250
260
33.5
Ouput voltage
160
264
33
180
Input voltage [V]
Copyright ⓒ Seoul Semiconductor Co., Ltd.
Output voltage [V]
0.85
output current [mA]
7
Power Factor [%]
Input Watt [W]
0.9
190
200
210
220
230
240
250
260
264
Input voltage [V]
<8>
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Infineon at a Glance
The Company
Market share
 Infineon provides semiconductor and system
solutions, focusing on three central needs of
our modern society:
Energy Efficiency, Mobility and Security
#1
12%
 Revenue in FY 2013: € 3.843 billion
Infineon
 26,725 employees worldwide (as of
September 2013)
Toshiba
7%
Mitshubishi
7%
 Strong technology portfolio with more than
18,650 patents and patent applications (as of
September 2013)
 More than 20 R&D locations
 Germany's largest and Europe's second
largest semiconductor company
Copyright ⓒ Seoul Semiconductor Co., Ltd.
<9>
STMicro
6%
Fairchild
6%
Power semiconductors and
modules in calendar year 2012.
Source: IHS, September 2013.
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